Abstract
The redistribution of a variety of substitutional elements in silicon under ion irradiation was investigated using SIMS, XTEM, RBS and electrical methods. In order to model the case of a single step ion implantation at elevated temperatures a method of postbombardment of preinserted dopants was used. Systematics of the diffusivity of the different dopants and of the defect kinetics under heavy ion bombardment of silicon have been derived. Optimized implantation conditions for technological applications of ion implantation at elevated temperatures have been obtained.
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