Integrated Logic Circuits Research Articles

High‐Performance, Single‐Component Ambipolar Organic Electrochemical Transistors with Balanced n/p‐Type Properties for Inverter and Biosensor Applications

AbstractAmbipolar organic electrochemical transistors (OECTs) with a single organic mixed ionic‐electronic conductor (OMIEC) have unique advantages by reducing fabrication complexity and cost in complementary logic circuit and bioelectronic applications. However, the design and synthesis of high‐performance ambipolar OMIECs for efficient transport and coupling both cation/anion and electron/hole remain challenging. Herein, a donor–acceptor (D–A)‐typed ambipolar OMIEC polymer (DHF‐gTT) is presented, whose superior ambipolarity stems from the concurrent oligoethyleneglycol‐functionalized D/A units that facilitates cation/anion injection and transport. Additionally, the fluorination of acceptor unit improves both hole/electron transports due to the fully‐locked backbone and promotes electron injection by down‐shifting molecular energy levels. Consequently, DHF‐gTT‐based OECTs achieve balanced figure‐of‐merit (µC*) for both p‐type and n‐type operations (12.4–14.6 F cm−1 V−1 s−1), setting new benchmarks for ambipolar OECTs, in terms of n‐type µC* and electron/hole mobilities. Such ambipolar OECTs enable the inverter to achieve a record‐high gain (102 V/V) and associated n‐type and p‐type molecular detectors to offer real‐time and highly sensitive detection of histamine and hydrogen peroxide detection, respectively. These results indicate the effectiveness of judicious molecular design on achieving high‐performance ambipolar OMIECs, allowing the state‐of‐the‐art single‐component ambipolar OECTs for both highly integrated logic circuit and bioelectronic applications.

Two‐Dimensional Heterostructure Complementary Logic Enabled by Optical Writing

Integrated logic circuits using atomically thin, two‐dimensional (2D) materials offer several potential advantages compared to established silicon technologies such as increased transistor density, circuit complexity, and lower energy dissipation leading to scaling benefits. In this article, a novel approach to achieve tunable doping in 2D semiconductors is explored to achieve complementary transistors and logic integration. By selectively transferring WSe2 onto hBN and SiO2 substrates, complementary transistor behavior (n‐ and p‐type) was achieved using a UV light source and electrostatic activation. Furthermore, advanced characterization techniques, including high‐resolution transmission electron microscopy (HRTEM) and Kelvin probe force microscopy (KPFM), provided insights into the chemical composition and surface potential changes after UV writing. Finally, a logic inverter was successfully implemented using selectively photo‐induced doped WSe2 transistors, showcasing the potential for practical logic applications. This innovative method opens new avenues for designing energy‐efficient and reconfigurable 2D semiconductor circuits, addressing key challenges in modern electronics.

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures.

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array.

Arduino based 74-series integrated circuits testing system at gate level

<span lang="EN-US">The goal of this research article is to build and implement a low-cost, user-friendly 74-series logic integrated circuits (ICs) tester that is independent of a computer. Depending on the truth table of the gates and the IC configuration, the logic IC tester will be able to test the operation of the 74 series logic gates (AND, OR, NOR, NAND, XOR) of those ICs. It is feasible to test a range of logic ICs with higher pin widths thanks to the proposed system’s usage of an Arduino Mega platform module as a microcontroller, which provides the ability to connect 54 programmed logic inputs or outputs. The versatility offered by this design and the use of a personal computer allow for the reprograming and updating of the logic IC functional tester. Any 74-series ICs testing outcome will be shown on liquid crystal display (LCD) at the gate level. The logic IC functional tester was successfully constructed and operates flawlessly.</span>

Design of various operating devices for sorting binary data

The object of research is the process of designing hardware devices for sorting arrays of binary data using the methodology of space-time graphs. The main task that is solved in the work is the development and research of multi-cycle operating devices for sorting binary data in order to choose the optimal structure with predetermined technical characteristics for solving the sorting problem. As an example, the development of different types of structures of multi-cycle operating sorting devices by the method of «even-odd» permutation is shown and their system characteristics are determined. New structures of multi-cycle operating devices have been designed for a given sorting algorithm, and analytical expressions for calculating equipment costs and their performance have been given. A comparative analysis of the hardware and time complexity of the developed structures of devices for sorting binary numbers of various types with known implementations of algorithmic and pipeline operating devices was carried out. As a result, the proposed structures, when sorting large arrays of binary data (N>128), have an order of magnitude less hardware complexity due to sequential execution of the same type of operations. The time complexity of multi-cycle operating devices of combined and sequential types with large values of input data is 2.3 and 3.4 times less than that of known pipeline operating devices. A feature of the research results is the possibility of finding the optimal ratio between the hardware and time characteristics of the resulting structures of sorting devices. Owing to this, the designer will be able to choose the necessary type of device for the implementation of the corresponding task with optimal system characteristics. The field of application of the designed sorting devices is the tasks of digital processing of signals and images. The practical use of the developed sorting devices can be carried out in the form of their synthesis on software integrated logic circuits

Integrated multifunctional molecular logic device powered by ion-specific dual mode optical responses

The current letter presents a new model of creating flexible interconvertible logic circuits by using various chemical components as inputs out of a specifically designed molecule. Very distinct output optical signals were received when Hg2+ and F− ions were incorporated as specific inputs. Interestingly, the degrees of responses, as quantified by spectral changes, were altered in the presence of specific masking agents or water. Thus, to obtain the intended results, multiple concentration modulated reversible and irreversible spectroscopic experiments were designed in a case-specific manner to examine the changes in absorption spectra at multiple channels. Beyond conventional logic gates like NOR, OR, AND, and NAND, we were also competent to create several integrated logic circuits including IMPLICATION, INHIBIT, TRANSFER, and NOT-TRANSFER. It's amazing how simple it is to switch the sort of logic sense in this case thanks to optical toggling.

Multicultural Diversity Workforce and Global Technology Collaboration Empowered Semiconductor Manufacturing Excellence in Taiwan: A Manufacturing Engineer’s Perspective

Abstract This paper summarizes the perspectives from a manufacturing engineer on how the government policy, global partnership, and diversity of the United States (US), Japanese, European, and traditional Chinese cultures in Taiwan have created a workforce of semiconductor manufacturing talent in the past five decades. The complex interwoven events of Covid-19 pandemic, supply chain resilience, national security, and geopolitical conflicts have made semiconductor manufacturing a key focus of government policy. As a world leader in integrated circuit (IC) design, design software, equipment, and research, the US has struggled in the past few years on the high yield volume manufacturing of the most advanced logic IC and failed to translate research innovations to quality production. Manufacturing, not innovation or equipment, is a key barrier of the US semiconductor industry. Two models for excellence in advanced manufacturing are described. Three pillars of government policy, global collaboration, and multicultural diversity empower semiconductor manufacturing excellence in Taiwan is described. An approach to evaluate, select, educate, and train manufacturing talents is proposed. Directions for semiconductor manufacturing research are discussed. There is no genius in semiconductor manufacturing, which requires extensive experience and continuous improvement without shortcuts to be competitive. The steadfast good government policy, multicultural diversity workforce, and global technology collaboration to achieve semiconductor manufacturing excellence are the focus of the conclusion.

Guest Editors’ Introduction: Special Issue on Machine Learning for CAD/EDA

Moore’s Law is still alive and well, as far as increasing the complexity of integrated circuits (ICs) is concerned. Logic ICs with about 20 billion transistors or even more are being manufactured today. Their design is a daunting task. While complexity keeps increasing relentlessly, novel technical challenges (e.g., mask patterning challenges and increasing manufacturing variations) appear as we are moving ever closer to the limits of technology scaling.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics.

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Label-Free Resonance Rayleigh Scattering Amplification for Lipopolysaccharide Detection and Logical Circuit by CRISPR/Cas12a-Driven Guanine Nanowire Assisted Non-Cross-Linking Hybridization Chain Reaction.

Although the CRISPR/Cas system has pioneered a new generation of analytical techniques, there remain many challenges in developing a label-free, accurate, and reliable CRISPR/Cas-based assay for reporting the levels of low abundance biomolecules in complex biological samples. Here, we reported a novel CRISPR-derived resonance Rayleigh scattering (RRS) amplification strategy and logical circuit based on a guanine nanowire (G-wire) assisted non-cross-linking hybridization chain reaction (GWancHCR) for label-free detection of lipopolysaccharide (LPS). In the presence of a target, the protospacer-adjacent motif-inserted aptamer is rationally designed to specifically combine with LPS rather than Cas12a, suppressing the trans-cleavage activity of CRISPR/Cas12a and retaining the reporter probes to trigger non-cross-linking aggregation. Owing to the automatic hybridization chain reaction (HCR), in the presence of Mg2+, the released G-quadruplex sequence aggregated to assemble the G-wire superstructure through non-cross-linking. As a result, a dramatically amplified RRS intensity is observed, allowing for reporting LPS levels in a low detection limit of 0.17 pg/mL and a wide linear range among 1.0-100.0 ng/mL. Moreover, this reaction event is capable of programming to perform classical Boolean logic tree analysis, including basic logic computing and complex integrated logic circuits. This study comprehensively analyzed with respect to information flow, matter (molecular events), and energy (RRS), revealing the potential promise in designing of molecular-level "Internet of Things", intelligent computing, and sensing systems.

Dual function spin-wave logic gates based on electric field control magnetic anisotropy boundary

Spin waves (SWs) have been considered a promising candidate for encoding information with lower power consumption. Here, we propose dual function SW logic gates, one unit cell with two synchronized logic operation functions, based on the electric field controlling of the SW propagation in the Fe film of a Fe/BaTiO3 heterostructure by the motion of a magnetic anisotropy boundary. We show micromagnetic simulations to validate the and–or and nand–nor logic gates. Our research may find a path for simplifying integrated logic circuits using such dual function SW logic gates.

Antipyrine-based Schiff base as fluorogenic chemosensor for recognition of Zn2+, Cu2+ and H2PO4− in aqueous media by comparator, half subtractor and integrated logic circuits

A new dual colorimetric and fluorescent receptor L, antipyrine-based chemosensor, was synthesized and characterized by UV–Vis absorption and fluorescence spectroscopic studies. The binding behavior of the chemosensor L toward Cu2+ and Zn2+ ions in an aqueous medium was investigated by UV–Vis absorption, 1HNMR and fluorescence spectroscopic studies. Benesi-Hildebrand plot is used to calculate the binding affinity. Based on the UV–Vis titration of receptor L, the 1:1 stoichiometry between L and M2+ (M2+= Cu2+ or Zn2+) is obtained. The detection limits (obtained by the 3σ method) of compound L are 4.23 × 10−6 mol L−1 for Cu2+ and 2.41 × 10−6 mol L−1 for Zn2+. The receptor L-Zn2+ can act as a highly selective sensor for H2PO4− ions over other anionic species (F−, Cl−, Br−, I−, NO3−, CN−, HSO4−, ClO4− and OAC−) in an aqueous medium. According to the changes in absorption and emission wavelengths and visual color changes with two sequential ionic inputs (Cu2+ and Zn2+), it is clear that the receptor behavior can mimic the arithmetic functions of XOR, INH1, INH2, XNOR, OR, NOR and IMP logic gates and complex logic circuits such as comparator and half subtractor with a single molecule. The ‘novel’ dinuclear Zn(II) complex could be used as a colorimetric fluorescent H2PO4− (Pi) chemosensor. By utilizing Cu2+, Zn2+ and H2PO4− ions as the inputs, a new combinational logic circuit with three different logic gates (OR, NOT, and AND) has been constructed.

Anomaly detection in random circuit patterns using autoencoder

Background: Systematic/stochastic pattern defects affect the production yield of integrated circuits (IC) containing trillions of 10-nm level features. Aim: We detect pattern anomalies/defects from images obtained from scanning electron microscopes (SEM) for random/arbitrary IC patterns without using design data. Approach: We decompose SEM images into small sub-images and apply an identical autoencoder to each of them to detect anomalies. The astronomical varieties in random IC patterns are reduced into limited varieties in elementary patterns, which are coded onto limited dimension latent vectors in autoencoder. The discrepancy between autoencoder input and output represents a deviation of local pattern shapes from ideal or allowed ones and is used as an index of anomaly. Results: A wide variety of anomalies/defects are detected in regular and random IC patterns fabricated by extreme ultra-violet lithography without prior knowledge about anomalies at a high signal-to-noise ratio within a time shorter than the typical image acquisition time of SEMs. They include missing/necking in holes/trenches, collapsing/breaking in lines, various local pattern distortion/deformation, and tiny particles. Frequency and spatial distributions of the discrepancy index are sensitive to process changes and can be used for visualizing the sign or causes of anomalies. Conclusions: The method is effective for inspecting memory and random logic ICs with high-speed SEMs.

Reconfigurable MoTe2 Field-Effect Transistors and its Application in Compact CMOS Circuits

The outstanding physical and electrical properties of transition metal dichalcogenides (TMDs) as semiconductor materials demonstrate a promising platform for future electronic devices. Among all the TMDs, MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , in which the bandgap is close to that of the silicon (Si), is a more favorable candidate than others to be applied in next-generation integrated circuits (ICs). However, the conventional physical or chemical doping method is complicated for fabricating the MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> logic ICs. The transistors with additional polarity gates (PGs) are defined as polarity-controllable transistors (PCTs). The PG can dynamically control the type of charge carriers (n- or p-type) in the source/drain by electrostatic doping without the need of any physical or chemical doping, and thus reconfigure the transistor between n-type and p-type. In our work, the ambipolar conduction property in MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> enables the fabrication of high-quality polarity-controllable MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> transistors (PCMTs) that are promising as building blocks to construct the MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> logic ICs. The on/off ratios of the PCMTs are above 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> for both n-type and p-type. The highest field-effect mobility μ of p- and n-type MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> transistors are 38 and 42, respectively. The inverter (INV) based on the PCMTs has achieved a high gain of 37. Furthermore, the logic-gate cell library, which includes INV, negative- AND (NAND), negative- OR (NOR), exclusive- OR (XOR), and maJority (MAJ) is demonstrated using PCMTs. The above-mentioned desirable properties make PCMTs promising for future applications in 2-D-semiconductor-material-based logic ICs.

Sweet Electronics: Honey-Gated Complementary Organic Transistors and Circuits Operating in Air.

Sustainable harnessing of natural resources is key moving toward a new-generation electronics, which features a unique combination of electronic functionality, low cost, and absence of environmental and health hazards. Within this framework, edible electronics, of which transistors and circuits are a fundamental component, is an emerging field, exploiting edible materials that can be safely ingested, and subsequently digested after performing their function. Dielectrics are a critical functional element of transistors, often constituting their major volume. Yet, to date, there are only scarce examples of electrolytic food-based materials able to provide low-voltage operation of transistors at ambient conditions. In this context, a cost-effective and edible substance, honey, is proposed to be used as an electrolytic gate viscous dielectric in electrolyte-gated organic field-effect transistors (OFETs). Both n- and p-type honey-gated OFETs (HGOFETs) are demonstrated, with distinctive features such as low voltage (<1 V)operation, long-term shelf life and operation stability in air, and compatibility with large-area fabrication processes, such as inkjet printing on edible tattoo-paper. Such complementary devices enable robust honey-based integrated logic circuits, here exemplified by inverting logic gates and ring oscillators. A marked device responsivity to humidity provides promising opportunities for sensing applications, specifically, for moisture control of dried or dehydrated food.

Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits.

The increasing demand for solution-processed and flexible organic electronics has promoted the fabrication of integrated logic circuits using organic field-effect transistors (OFETs) instead of fundamental unit devices. This has been made possible through the rapid development of materials and processes in the past few decades. It is important for the p- and n-type OFETs using different organic semiconductors (OSCs) to have complementarily matched electrical characteristics, which significantly improve the performance of organic logic circuits. In this study, an efficient strategy to optimize the performance of flexible organic electronics, such as OFETs and complementary inverters, is proposed using a combination of polymer insulators tailored to each OSC type. Photopatternable soluble copolyimides (ScoPIs), which exhibit excellent insulating properties and chemical resistance, are synthesized and applied as gate dielectric layers in the OFETs. The material and electrical properties are systematically investigated by varying the molecular ratio of ScoPIs to determine the optimal conditions for each OFET type. As a result, complementary inverters report 1.67 times higher integration density compared to the conventional ones while maintaining gain, switching threshold, and static noise margin of 23.7 V/V, 22.1 V, and 12.1 V, respectively, at a supply voltage of 40 V. The flexible complementary inverters are successfully demonstrated by fully exploiting the advantages of ScoPIs.

A Hippocampus-Inspired Dual-Gated Organic Artificial Synapse for Simultaneous Sensing of a Neurotransmitter and Light.

Organic neuromorphic devices and sensors that mimic the functions of chemical synapses and sensory perception in humans have received much attention for next-generation computing and integrated logic circuits. Despite recent advances, organic artificial synapses capable of detecting both neurotransmitters in liquid environments and light are not reported. Herein, inspired by hippocampal synapses, a dual-gate organic synaptic transistor platform with a photoconductive polymer semiconductor, a ferroelectric insulator of P(VDF-TrFE), and an extended-gate electrode functionalized with boronic acid is developed to simultaneously detect the neurotransmitter dopamine and light. The developed synaptic transistor enables memory consolidation upon repetitive exposure to dopamine and polychromatic light, exhibiting effectively modulated postsynaptic currents. This proof-of-concept hippocampal-synapse-mimetic organic neuromorphic system combining a chemical sensor and a photosensor opens new possibilities for developing low-power organic artificial synaptic multisensors and light-induced memory consolidative artificial synapses, and can also contribute to the development of human-machine interfaces.

All optical logic gates based on nanoplasmonic MIM waveguides

In this paper, we propose and investigate some designs of basic plasmonic logic gates in two dimensional plasmonic waveguides with nanotube metal-insulator-metal waveguides using the numerical method of eigenmode expansion. These gates, including XOR, OR, NOT, and Feynman gate can be realized by changing geometrical parameters properly. Also, by cascading and combining these basic logic gates, any complex logic function can also be obtained providing the highly integrated optical logic circuits. The proposed logic gates have the broadband up to 300 nm and only spend the compact size as much as 2 µm×1.2 µm. Thus, the devices can be applied widely and significantly in optical computing and processing devices.

Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism

Applying the nonequilibrium Green's function (NEGF), we have compared the performance of InAs nanowire (NW) and its based superlattice MOSFET under optical phonon absorption and emission. Our results indicate fluctuations in the NW characteristics like density of states (DOS), scattering rate, mobility, effective transmission and current. We applied the NEGF approach to show fluctuations in the NW parameters as a function of the energy. Electron phonon interactions and background effect are also taken into account through scattering self-energies in the self-consistent born approximation. The energy dependence of these oscillations allows us to deduce a coupling between electrons and the phonons. This analysis opens the door for InAs NWs as nano electromechanical devices, superlattice MOSFET and particularly, as phonon detectors. • Semiconductor nanowire based devices and superlattice MOSFET have potential applications in many areas, such as optoelectronics, sensors, and particularly integrated logic circuits. • Identification of InAs nanowire (NW) and its based superlattice MOSFET have been done here. • A nonequilibrium green's function model has been developed here to explore NWs. • The mentioned nonequilibrium green's function can provide accurate and detailed device performances of NWs in the presence of electron phonon interactions.

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe2 quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.