Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism

Abstract

Applying the nonequilibrium Green's function (NEGF), we have compared the performance of InAs nanowire (NW) and its based superlattice MOSFET under optical phonon absorption and emission. Our results indicate fluctuations in the NW characteristics like density of states (DOS), scattering rate, mobility, effective transmission and current. We applied the NEGF approach to show fluctuations in the NW parameters as a function of the energy. Electron phonon interactions and background effect are also taken into account through scattering self-energies in the self-consistent born approximation. The energy dependence of these oscillations allows us to deduce a coupling between electrons and the phonons. This analysis opens the door for InAs NWs as nano electromechanical devices, superlattice MOSFET and particularly, as phonon detectors. • Semiconductor nanowire based devices and superlattice MOSFET have potential applications in many areas, such as optoelectronics, sensors, and particularly integrated logic circuits. • Identification of InAs nanowire (NW) and its based superlattice MOSFET have been done here. • A nonequilibrium green's function model has been developed here to explore NWs. • The mentioned nonequilibrium green's function can provide accurate and detailed device performances of NWs in the presence of electron phonon interactions.