The fabrication process and physical properties of graphoepitaxially engineered high-Tc direct current superconducting quantum interferometer devices (DC SQUIDs) are studied. Double buffer layers, each comprising a graphoepitaxial seed layer of YBa2Cu3O7−x and an epitaxial blocking layer of SrTiO3, were deposited over textured step edges on (001) surfaces of MgO substrates. Scanning electron microscopy and high-resolution transmission electron microscopy were used to investigate the microstructural properties of DC SQUIDs with graphoepitaxial Josephson junctions. Both direct coupled and inductively coupled high-Tc DC SQUIDs with graphoepitaxial step edge junctions and flux transformers were studied.