Abstract
The fabrication process and physical properties of graphoepitaxially engineered high-Tc direct current superconducting quantum interferometer devices (DC SQUIDs) are studied. Double buffer layers, each comprising a graphoepitaxial seed layer of YBa2Cu3O7−x and an epitaxial blocking layer of SrTiO3, were deposited over textured step edges on (001) surfaces of MgO substrates. Scanning electron microscopy and high-resolution transmission electron microscopy were used to investigate the microstructural properties of DC SQUIDs with graphoepitaxial Josephson junctions. Both direct coupled and inductively coupled high-Tc DC SQUIDs with graphoepitaxial step edge junctions and flux transformers were studied.
Highlights
High-Tc thin film superconducting devices utilize the unique properties of macroscopic quantum phenomena in superconductors and much lower cryogenic costs for their operation at 77 K, when compared to low-Tc devices, which are affected by the increasing cost of liquid helium
The formation of steps on MgO substrates was performed by ion beam etching (IBE) at an incident angle of 45o over the edge of an AZ TX1311 photoresist reflowed to achieve a 45o slope angle
Thanks to the use of the STO blocking layer, the superconducting transition temperature Tc of the top YBCO layer increased from approximately 89 K to above 91 K
Summary
Journal of Physics: Conference Series 507 (2014) 042009 doi:10.1088/1742-6596/507/4/042009. E. Dunin-Borkowski Peter Grünberg Institute (PGI-5: Microstructure Research) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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