Rhenium films of 20–130 Å thickness were deposited in ultra high vacuum on bare and SiO coated glass substrates. Resistors in the sheet resistivity range 80−5 × 10 4 Ω/sq . were stable in air if they were deposited above 350 °C and protected by a layer of SiO. It was possible to adjust the resistance of a film to within 0.3% of a preset value by a current pulse method. Uncoated films increased in resistivity upon air exposure due to oxidation. The temperature coefficient of resistivity varied from +300 ppm to -300 ppm, in the resistivity range 0.15−4.0 kΩ/sq. indicating a gradual change from metallic to activated charge transfer. Coating of the Re-films with SiO had different effects on high and low resistivity films. The former showed a decrease and the latter an increase in resistivity. These changes are attributed to an enhanced charge transfer between discrete metal islands and surface scattering in the metal islands, respectively.