Abstract
Tungsten films were sputtered at 1.5-kV cathode voltage under various sputtering conditions. It was found that their resistivities differ greatly, ranging from 5×103 μΩ. The higher-resistance case corresponds to films deposited in the diode mode at 50-μ argon pressure, and the lower to films deposited in the triode made at 2-μ pressure. The higher-resistivity tungsten films have properties similar to the so-called ``low-density tantalum'' and a host of other metal films which have been prepared under similar sputtering conditions. Analysis by rf spark-source mass spectroscopy and electron microscopy support the theory that the high resistivity was caused by the incorporation of residual gases during the growth process.
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