Abstract
A three‐point probe has been devised which makes possible simple, rapid measurements of resistivity and conductivity type of epitaxial silicon films. The probe in contact with a silicon crystal is effectively a point‐contact diode with ohmic base termination. The external circuitry measures this “diode's” V–I characteristics. Its peak inverse voltage is a predictable function of resistivity and hence resistivity is determined from this parameter. The advantage of the probe is that special preparation of rectifying and nonrectifying contacts is not necessary. The design, calibration, and operation of the probe are discussed in addition to some experimental results such as resistivity as a function of location within the reactor and a relatively simple method for measurement of resistivity gradient in the film. Finally, the method's limitations in measuring thin, high resistivity films are described and capability limits defined.
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