Abstract
AbstractElectron mirror microscopic observations of lithium p‐n and p‐i‐n junctions in Si show that the contrast of the junction boundary strongly decreases after being irradiated with electrons. Simultaneously the process of saturation with lithium of the micro‐cracks present on the surface in the neighbourhood of the junction line is observed. The observed process is interpreted in terms of the field extraction of lithium ions from the deeper lying positions into the surface. The electric field responsible for the extraction of lithium ions originates from the electrons impinging on a high resistive solid polymer film formed on the crystal in the course of observation. A similar process, though with slower rate, was observed on p‐n junctions obtained by the diffusion of aluminum into n‐type silicon.
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