Abstract
Superconducting disordered and amorphous films of Bi, Ga, Al are studied by the tunneling technique. The values of the reduced energy gap 2δ/kT c (4.56 in amorphous Bi, 4.52 in amorphous Ga, 4.15 in amorphous Sn, and 3.72 in amorphous Al) indicate a very strong coupling in some amorphous superconductors. An increase of the tunneling resistance by crystallization of the amorphous Ga-films is interpreted as a decrease in the concentration of free electrons. The influence of the high film resistance on the measured slope of the tunneling curves is observed as long as both films or one of them are normal.
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