High-performance Self-powered Photodetector Research Articles

ZnO@NiO core-shell heterojunction photoanode modified with NiOOH co-catalyst for high-performance self-powered photoelectrochemical-type UV photodetector

ZnO, a promising photoanode material, faces significant challenges in achieving high-efficient photoelectrochemical (PEC) type UV photodetectors due to inadequate charge separation and sluggish surface reaction kinetics. Constructing heterojunction nanostructures by coupling of p-NiO to n-ZnO nanowire arrays with well-aligned energy band positions presents a feasible strategy for enhancing PEC-type photodetector performance. Herein, we demonstrate that the designed ZnO@NiO core–shell nanowire arrays form a spatial charge transfer channel, facilitating efficient generation and extraction of charge carriers. The exceptional catalytic properties of NiOOH, derived from the transformation of NiO in an aqueous alkaline environment, serve as a potent co-catalyst, effectively accelerating the kinetics of the surface oxygen evolution reaction. Benefiting from the synergistic effect of the heterojunction and cocatalyst, the optimized photoanode achieves a high responsivity of 438.36 mA/W, a large detectivity of 4.85 × 1012 Jones, and rapid response time of 150.05/150.26 ms, while simultaneously exhibiting long-time PEC stability. This work highlights the critical role of nanostructure design in developing high-performance self-powered UV photodetectors.

High-Performance Self-Powered Photodetectors Based on TMD Alloy/GaAs van der Waals Heterojunctions for Infrared Light Communication

High-Performance Self-Powered Photodetectors Based on TMD Alloy/GaAs van der Waals Heterojunctions for Infrared Light Communication

Solution-processed quantum dot short-wavelength infrared photodetectors via integrating 2D MXenes into electron transport layer

Solution-processed quantum dots (QDs) have attracted intensive attention in short-wavelength infrared (SWIR) photodetectors due to their excellent optical properties and tunable size-dependent bandgap. However, the intrinsic defects of the widely used ZnO electron-transport layer (ETL) and the inappropriate band alignment at the interface between the ETL and photoactive QDs inevitably impact the optoelectronic performance of the photodetector. Herein, a high-performance self-powered SWIR photodetector is developed by using 2D Ti3C2 MXenes to passivate the defects of ZnO ETL and to tailor the band alignment at the interface of the ETL/photoactive layer through interface engineering. As a result, the SWIR photodetectors demonstrate the ultra-high light-to-dark current (Ilight/Idark) ratio of ∼ 105 and the low dark current density of 8.33 × 10-4 mA/cm2, and the high specific detectivity (D*) of 1.99 × 1011 Jones at 0 V. By the systematic characterizations, it is proofed that 2D MXene can efficiently passivate defects in ZnO and optimize the alignment of energy levels between the ETL and photoactive layer, which will suppress the recombination of electrons and holes and eventually promote photogenerated carrier transfer at the interface and thus improve device performance. This work revealed that the high-performance solution-processed QD based SWIR photodetector enabled by interface engineering will promote the development of optoelectronic devices in the future.

High-performance self-powered electrochemical photodetectors based on co-precipitation and hydrothermally synthesized HgS nanoparticles

High-performance self-powered electrochemical photodetectors based on co-precipitation and hydrothermally synthesized HgS nanoparticles

Cu2O/TiO2 core–shell nanowire heterojunction for high-performance self-powered photodetector

High-performance self-powered photodetectors (PDs) have great commercial value in optical communication, intelligent sensing and medical diagnosis. However, the limited active area of traditional thin film heterojunction seriously restricts the photoelectric performance of the detector. In this paper, the Cu2O/TiO2 core-shell nanowire (NW) heterojunction PD was synthesized for the first time by simple hydrothermal and electrochemical deposition methods, which effectively improved the response performance and response speed of the device based on its broad photoactive area and ordered carrier transport path. The PD exhibits significant diode behavior, with rectification ratios of 543 at ±2 V. The responsivity is as high as 6.8 mA W−1 at zero bias under 490 nm illumination. The short rise and decay times measured are 0.09 and 0.18 s at zero bias, respectively. Obviously, this low-cost, high-performance self-powered Cu2O/TiO2 core-shell NW heterojunction PD shows great promise in future optoelectronic device applications.

Enhanced Performance of Self-Powered Ga2O3/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity.

Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors (PDs) for their switchable spontaneous polarization. However, the utilization of ferroelectric materials to modulate the built-in electric field and energy band at the junction interface has rarely been investigated. Herein, we design and fabricate self-powered solar-blind UV PDs based on a Ga2O3/ZnO:V heterojunction. The performance of the Ga2O3/ZnO:V PD is significantly enhanced through the reasonable coupling of ferroelectricity and piezoelectricity within the ZnO:V film. The device at 260 nm exhibits excellent photoelectric properties with high peak responsivity of 64.5 mA/W, a specific detectivity of 3.8 × 1010 Jones, and a rise/decay time of 1.9/45.2 μs, together with reproducibility and stability. Systematical energy band diagram analysis reveals that the excellent performance of Ga2O3/ZnO:V PD can be attributed to the driving forces arising from the addition of the depolarization field and piezoelectric field, which increases the intensity of built-in electric field and promotes the separation and transport of photogenerated carriers at the heterojunction interface. The findings of our research provide a novel avenue and valuable guidance for the design of high-performance self-powered photodetectors.

Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation.

Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.

Self-Rolled-Up WSe2 One-Dimensional/Two-Dimensional Homojunctions: Enabling High-Performance Self-Powered Polarization-Sensitive Photodetectors.

Mixed-dimensional heterostructures integrate materials of diverse dimensions with unique electronic functionalities, providing a new platform for research in electron transport and optoelectronic detection. Here, we report a novel covalently bonded one-dimensional/two-dimensional (1D/2D) homojunction structure with robust junction contacts, which exhibits wide-spectrum (from the visible to near-infrared regions), self-driven photodetection, and polarization-sensitive photodetection capabilities. Benefiting from the ultralow dark current at zero bias voltage, the on/off ratio and detectivity of the device reach 1.5 × 103 and 3.24 × 109 Jones, respectively. Furthermore, the pronounced anisotropy of the WSe2 1D/2D homojunction is attributed to its low symmetry, enabling polarization-sensitive detection. In the absence of any external bias voltage, the device exhibits strong linear dichroism for wavelengths of 638 and 808 nm, with anisotropy ratios of 2.06 and 1.96, respectively. These results indicate that such mixed-dimensional structures can serve as attractive building blocks for novel optoelectronic detectors.

High Performance Self-Powered Photodetectors Based on Graphene Nanoribbons/Al2O3/InGaZnO Heterojunctions

High Performance Self-Powered Photodetectors Based on Graphene Nanoribbons/Al₂O₃/InGaZnO Heterojunctions

Self-powered poly(3-hexylthiophene)/ZnO heterojunction ultraviolet photodetectors decorated by silver nanoparticles

Self-powered poly (3-hexylthiophene)/zinc oxide (P3HT/ZnO) heterojunction ultraviolet photodetectors decorated by silver nanoparticles (Ag NPs) were fabricated by sol-gel and spin-coating techniques. The ultraviolet photoresponse performance of the P3HT/ZnO heterojunction photodetectors influenced by the position of plasmonic Ag NPs was investigated. The responsivity and detectivity of the P3HT/Ag/ZnO photodetector with placed Ag NPs at the interface of ZnO and P3HT layers enhanced to 1.92 and 1.15 times compared to the reference devices. When the Ag NPs embedded into ZnO layer, the responsivity, detectivity and external quantum efficiency were 16.42 mA/W, 5.97 × 1011 Jones, and 5.36 %, respectively, which were 5.77 times, 4.64 times and 5.77 times to that of the pristine P3HT/ZnO photodetector. The enhancement mechanism of plasmonic metallic nanoparticles to the performance of the photodetectors was discussed in details. This study presents a simple route to high performance self-powered photodetectors.

High-performance self-powered UV photodetectors using SnO2 thin film by reactive magnetron sputtering

Self-powered UV photodetector (UVPD) operates without the need for an external energy source and contributes to global energy conservation. With ongoing innovation, self-powered PDs are becoming increasingly appealing for industrial and innovation applications such as advanced environmental monitoring and communication devices. This study investigates the influence of varying working pressures (ranging from 3 to 15 mTorr) during reactive magnetron sputtering on the crystalline structure, surface morphology, and performance of SnO2 thin film photodetectors, aiming to fabricate self-powered UVPDs. The SnO2-based UVPD demonstrates exceptional self-powered UV photodetection capabilities, characterized by a sensitivity of 6.41×105%, responsivity of 0.09 mA/W, and detectivity of 2.99×1010 Jones. In addition, SnO2-based UVPD possesses a switching photo response and recovery time of 0.75 and 0.99 s. Henceforth, it was observed that 8 mTorr SnO2 thin film exhibits exceptional stability, superior photodetector performance, and remarkable repeatability, rendering them highly suitable for UVPD applications. Notably, these films demonstrate sustained functionality for approximately 100 days without necessitating encapsulation. These excellent results confirm that SnO2 thin films are suitable for fabricating future smart optoelectronics devices.

Highly efficient self-powered CH3NH3Pbl3 perovskite photodiode with double-sided poly(methyl methacrylate) passivation layers

Hybrid organohalide perovskites have recently attracted significant attention due to their outstanding photovoltaic (PV) conversion capabilities in optoelectronic devices. Herein, to develop a highly sensitive and self-powered perovskite-based PV photodiode (PVPD), we implement the selective use of poly(methyl methacrylate) (PMMA) as noise-current-reducing passivation layers on both the front and rear sides of a CH3NH3PbI3 (MAPbI3) perovskite light-absorbing layer. It is found that the PMMA layers effectively suppress carrier recombinations at the interfaces, resulting in fairly high power conversion efficiency of 17.6%. Additionally, the double-sided PMMA-passivated MAPbI3 PVPD shows exceptional specific detectivity values (1.0 × 1014 Jones from the dark current and 1.3 × 1012 Jones from the noise current), significantly outperforming conventional MAPbI3 PVPDs without passivation layers. The device also exhibits a very wide linear dynamic response range of ∼139 dB, with rapid rise and decay response times of 57 and 18 μs, respectively. The double-sided PMMA-passivated MAPbI3 PVPD also is shown to be highly durable in terms of its dynamic responses even after a prolonged storage period of 1500 h. These results suggest that advanced interface engineering using double PMMA passivation layers holds great potential for developing high-performance self-powered perovskite photodetectors for a range of optoelectronic applications.

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa2O4 heterojunction with high sensitivity and fast speed.

Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGa2O4 has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the photodetector exhibits apparent self-powered performance with a maximum responsivity and specific detectivity of 2.75 mA/W and 1.10 × 1011 Jones at 0 V. The photodetector exhibits high repeatability and stability under 260 nm periodic illumination. The response and recovery time are 205 ms and 133 ms, respectively. This work provides an effective strategy for fabricating high-performance self-powered DUV photodetectors.

Efficient and stable self-powered PbSe photodetectors via doping-induced asymmetric Cr electrodes modulation of surface work function

Conventional PbSe infrared photodetectors typically demands a substantial external electric field, posing challenges in energy-constrained environments. Self-powered photodetectors present a promising avenue for addressing such electricity-related challenges. Nevertheless, the inherent limitations of symmetric Schottky contacts in metal-semiconductor-metal (MSM) photodetectors constrain their self-powered performance, resulting in opposing photocurrents. Constructing asymmetric MSM structures usually requires intricate design or sustained external fields. In this study, we propose a novel contact engineering strategy based on iodine doping to modulate surface work functions of PbSe film. Utilizing Cr electrodes, we achieve Ohmic contact on the iodine-doped top surface of PbSe film and Schottky contact on the as-grown bottom surface. This approach establishes a self-powered PbSe infrared photodetector with an asymmetric top-bottom MSM structure. We comprehensively investigate contact engineering by investigating surface chemical states, elemental variations, and surface work functions variation. Remarkably, the photodetector demonstrates an exceptional zero-bias detectivity of 1.13 × 109 Jones, with an extremely low dark current of 3.67 pA, high Ilight/Idark ratio exceeding 104, and extremely short response times of less than 1 ms, respectively. Our work introduces a new strategy for modifying the band structure, contributing to the fabrication of high-performance self-powered photodetectors.

Dual-coupling effect enables a high-performance self-powered UV photodetector.

Self-powered ultraviolet photodetectors generally operate by utilizing the built-in electric field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered detection is severely limited by the weak built-in electric field. Hence, advances in modulating the built-in electric field within heterojunctions are crucial for performance breakthroughs. Here, we suggest a method to enhance the built-in electric field by taking advantage of the dual-coupling effect between heterojunction and the self-polarization field of ferroelectrics. Under zero bias, the fabricated AgNWs/TiO2/PZT/GaN device achieves a responsivity of 184.31 mA/W and a specific detectivity of 1.7 × 1013 Jones, with an on/off ratio of 8.2 × 106 and rise/decay times reaching 0.16 ms/0.98 ms, respectively. The outstanding properties are primarily attributed to the substantial self-polarization of PZT induced by the p-GaN and the subsequent enhancement of the built-in electric field of the TiO2/PZT heterojunction. Under UV illumination, the dual coupling of the enhanced heterojunction and the self-polarizing field synergistically boost the photo-generated carrier separation and transport, leading to breakthroughs in ferroelectric-based self-powered photodetectors.

A Self-Powered Broadband Photodetector with High Photocurrent Based on Ferroelectric Thin Film Using Energy Band Structure Design

Self-powered photodetectors have the advantages of high sensitivity, sustainability, and small size and have become a research hotspot in advanced optoelectronic systems. However, the low output photocurrent density seriously hinders the practical application of ferroelectric self-powered photodetectors. Herein, the high-efficiency photoelectric detection performance of the Bi1-xHoxFeO3 ferroelectric self-powered photodetector is realized by doping Ho. The responsivity (R) and detectivity (D*) can reach 0.0159 A/W and 1.94 × 1011 Jones under monochromatic light with a wavelength of 900 nm. Meanwhile, the R and D* can reach 0.022 A/W and 2.65 × 1011 Jones under sunlight. These excellent photodetection performances are attributed to the high short-circuit current density (Jsc). When the Ho content is 6%, the output photocurrent reaches up to 0.81 mA/cm2. The systematic structure and photo-electric characteristic analysis suggest that the decrease in the band gap leads to the generation of a larger photocurrent while the ferroelectric polarization is reduced slightly. This work provides a new way to obtain high-performance self-powered photodetectors.

High performance self-powered solar-blind photodetector based on amorphous MgGa2O4/p-Si heterojunction

Self-powered solar-blind photodetectors are extensively implemented in military and industrial applications. Spinel ternary oxide MgGa2O4 with a wide bandgap of 4.92 eV is suitable for solar-blind photodetectors. Optoelectronic integration is a challenging research area, in terms of growing foreign semiconductors on Si substrates. Herein, a solar-blind photodetector based on amorphous MgGa2O4/p-Si heterojunction was fabricated by using RF magnetron sputtering. Under self-powered operation, the device exhibited good performance characteristics, including a high response sensitivity of 11.7 mA/W, a specific detectivity of 7.29 × 1011 Jones, and a fast photoresponse time (τr/τd = 0.200/0.021 s). This work demonstrates that the amorphous MgGa2O4/p-Si heterojunction is a promising approach to realize high-performance self-powered solar-blind photodetectors.

Element Diffusion Induced Carrier Transport Enhancement in High-Performance CZTSSe Self-Powered Photodetector.

Cu2ZnSn(S,Se)4 (CZTSSe) has attracted great interest in thin-film solar cells due to its excellent photoelectric performance in past decades, and recently is gradually expanding to the field of photodetectors. Here, the CZTSSe self-powered photodetector is prepared by using traditional photovoltaic device structure. Under zero bias, it exhibits the excellent performance with a maximum responsivity of 0.77 A W-1, a high detectivity of 8.78 × 1012 Jones, and a wide linear dynamic range of 103dB. Very fast response speed with the rise/decay times of 0.576/1.792 µs, and ultra-high switching ratio of 3.54 × 105 are obtained. Comprehensive electrical and microstructure characterizations confirm that element diffusion among ITO, CdS, and CZTSSe layers not only optimizes band alignment of CdS/CZTSSe, but also suppresses the formation of interface defects. Such a suppression of interface defects and spike-like band alignment significantly inhibit carrier nonradiative recombination at interface and promote carrier transport capability. The low trap density in CZTSSe and low back contact barrier of CZTSSe/Mo could be responsible for the very fast response time of photodetector. This work definitely provides guidance for designing a high performance self-powered photodetector with high photoresponse, high switching ratio, fast response speed, and broad linear dynamic range.

A high-performance self-powered broadband photodetector based on vertical MAPbBr3/ZnO heterojunction

A high-performance self-powered broadband photodetector based on vertical MAPbBr3/ZnO heterojunction

A modulated heterojunction interface via ferroelectric P(VDF-TrFE) towards high performance quasi-2D perovskite self-powered photodetectors

By incorporating P(VDF-TrFE) into quasi-2D perovskites, favorable energy band alignment is achieved at the junction. This leads to reduced dark current and facilitated charge transport, thereby achieving high performance self-powered photodetector.