Future lithography with exposure at 157nm, 126nm and 13nm require thin film resist techniques, because at these high exposure energies sufficiently transparent resist polymers for conventional singel layer resists are not available. Besides top-surface imaging dry developable bilayer resist systems offer excellent imaging properties (high resolution capability and wide focus windows) in a thin imaging photoresist layer that is applied on top of a thick light-absorbing and planarizing bottom resist. The high etch resistance of the underlying bottom coat provides unique process latitudes for the overall substrat treatment. Since 1995, Siemens has used the in-house developed CARL bilayer resist process [1, 2] as a from Clariant commercially available i-line version [3] in its high-volume DRAM and logic IC production [4]. The dramatic increase in focus latitudes at k1≤0.4, even with standard illumination and COG masks, allows shrinking down to 120nm with 193nm exposure or extending the lifetime of existing i-line and 248nm exposure tools. A chemically amplified CARL resist version is now investigated at 248 nm. With this material process development and optimization for the 193nm technology is possible because it is sensitive at both wavelengths (multi-wavelength characteristic). First results at 157nm exposure indicate that this process offers outstanding possibilities even with the methacrylate based polymers.