Precise pattern delineation by refractive index matching in a trilayer resist system

Abstract

In order to obtain precise pattern dimension control, optical indexes of the middle layer (ML) in a trilayer resist system are investigated. Photoabsorption in ML and bottom layer (BL) is important. However, optimization of photoabsorption in these layers is not sufficiently to suppress linewidth variations. From calculations of the reflection at each interface of the trilayer resist system, the matching of the refractive index between each layer [top layer (TL), ML, and BL] is found to be also important. The optimal refractive index of the ML for the novolac-type of TL and BL materials is estimated to be 1.7 at i line, which is the same value as that of novolac resin. To confirm this matching effect, an admixture material of Ti–alkoxide and silanol is used as the ML material. The mixing ratio is 50 wt %. The refractive index of this material with curing at 230 °C is 1.7. Using this material, the linewidth variation caused by the interference effect can be reduced as 0.04 μm, which is half that using spin-on glass as the ML. The material also shows a high O2 reactive ion etching resistance (1.7 nm/min) and good adhesion to the TL and BL. In the trilayer resist system, it is possible to fabricate a fine, precise pattern even on a large topography.