Abstract
G-line photoresists are exposed at 248 nm and subjected to aqueous development and electroless plating to produce submicron, metallized photoresist patterns. The high plasma etch resistance of the photoresist/metal structure allows for efficient pattern transfer into silicon dioxide. A key feature is that optical exposure of only the near-surface of the photoresist is required to achieve selective metallization. This process represents a new approach to surface imaging, reducing complications from substrate reflectivity and topography. 0.4 μm line/space pairs have been transferred into 5000 Å of SiO2 on Si.
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