Growth Of Wires Research Articles

Electron Transfer through Surface-Grown, Ferrocene-Capped Oligophenylene Molecular Wires (5-50 Å) on n-Si(111) Photoelectrodes.

We report the surface growth of oligophenylene molecular wires on Si(111) substrates and their electron-transfer (ET) properties. Iterative wire growth of biphenylene was achieved via Pd-catalyzed Negishi reactions for lengths of nphenyl = 1, 2, 4, 6, 8, and 12 (d ≈ 5-50 Å). The triflato-capped wires were functionalized with vinylferrocene for potentiometric studies. For the oligophenylenes of nphenyl = 1, 2, and 4 (wire length d ≈ 5-20 Å), there was a strong distance dependence (kapp = 22.6, 16.0, 8.40 s(-1), respectively), correlated to β = 0.07 Å(-1). In contrast, longer oligophenylenes for nphenyl = 4-12 (d ≈ 20-50 Å) displayed a negligible distance dependence with an ET rate of kapp ≈ 10.0 ± 1.6 s(-1). These data suggest a distance-dependent tunneling mechanism at short lengths (d < 20 Å) and a distance-independent ET at longer lengths (d > 20 Å).

Flexible Transistors: Drying‐Mediated Self‐Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures (Adv. Mater. 28/2015)

Flexible Transistors: Drying‐Mediated Self‐Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures (Adv. Mater. 28/2015)

Drying‐Mediated Self‐Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures

The creation of self-aligned MoS2 and WS2 wire arrays and their stacked hetero structures with controlled sizes and properties by a novel and facile method is presented. The thicknesses and periodicities of the aligned wires can be precisely controlled by adjusting certain parameters. These transition metal dichalcogenide wires are used as 1D semiconducting materials in the construction of flexible and transparent electronic devices. In addition, WS2/MoS2 heterostructures display clear optical and structural modulation.

Concurrent growth of InSe wires and In2O3 tulip-like structures in the Au-catalytic vapour-liquid-solid process

In this work, the concurrent growth of InSe and In2O3 nanostructures, obtained by thermal evaporation of InSe powders on Au-covered Si substrates, has been investigated by scanning and transmission electron microscopy techniques. The vapour-solid and Au catalytic vapour-liquid-solid growth mechanisms, responsible of the simultaneous development of the two different types of nanostructures, i.e. InSe wires and In2O3 tulip-like structures respectively, are discussed in detail. The thermodynamic processes giving rise to the obtained morphologies and materials are explained.

Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation

Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120–480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important part of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet.

Optical and Electrical Studies of Vertically Oriented Tellurium Nanowire Arrays Produced by Template Electrodeposition

We report the fabrication of highly ordered arrays of tellurium nanowires and investigate their electrical, optical and structural properties. The tellurium nanowire arrays were synthesized by electrochemical deposition via a template method and characterized by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and UV–Visible spectroscopy. The XRD and FESEM characterizations confirm the formation of a dense crop of tellurium nanowire arrays with hexagonal phase. The intense crystalline peak corresponding to the (100) plane observed in the XRD spectra suggests a preferential growth of wires along the [001] direction. The crystallite size and micro-strain effect were estimated by Williamson–Hall (WH) analysis. The average crystallite size and lattice strain extracted from WH plot were found to be ∼34 nm and 0.0044, respectively. Further, electrical properties of the arrays of nanowires were examined using a two-probe method. The current–voltage curve of the tellurium wires exhibits a non-linear behavior and a double diode-like characteristic, which signifies their novel applications in future nanodevices.

Evaluation of the Surface Tension of Silicon-Gold Binary Liquid Alloy

The gold-catalyzed vapor-liquid-solid (VLS) method is widely used for silicon nanowire (Si NW) fabrication. As the VLS process is influenced by the physical properties of the catalytic silicon-gold (Si-Au) droplet, quantifying the surface tension of the liquid alloy is important to achieve better control of the wire growth. Because the experimental measurement of the surface tension is difficult, it is necessary to obtain reasonable estimates from computational models. In this work, we conducted molecular dynamics simulations with a modified embedded-atom potential developed for the Si-Au binary system, and evaluated the surface tension γ based on the Virial stress expression. The dependence of surface tension γ on the Si fraction χ and temperature T is predicted. The entropy of the liquid-vapor interface was extracted from the slope of the γ-T curve. The Si concentration and stress distributions near the surface are also predicted. Our surface tension evaluation enables theoretical predictions of droplet and nanowire shape, and provides physical inputs for continuum phase field models of VLS growth.

Positioning and joining of organic single-crystalline wires.

Organic single-crystal, one-dimensional materials can effectively carry charges and/or excitons due to their highly ordered molecule packing, minimized defects and eliminated grain boundaries. Controlling the alignment/position of organic single-crystal one-dimensional architectures would allow on-demand photon/electron transport, which is a prerequisite in waveguides and other optoelectronic applications. Here we report a guided physical vapour transport technique to control the growth, alignment and positioning of organic single-crystal wires with the guidance of pillar-structured substrates. Submicrometre-wide, hundreds of micrometres long, highly aligned, organic single-crystal wire arrays are generated. Furthermore, these organic single-crystal wires can be joined within controlled angles by varying the pillar geometries. Owing to the controllable growth of organic single-crystal one-dimensional architectures, we can present proof-of-principle demonstrations utilizing joined wires to allow optical waveguide through small radii of curvature (internal angles of ~90–120°). Our methodology may open a route to control the growth of organic single-crystal one-dimensional materials with potential applications in optoelectronics.

Electrochemically synthesized polyethylene glycol coated ferromagnetic nanowire arrays

Polyethylene glycol (PEG) coated Fe, Co, and Ni nanowires (NWs) were fabricated by a template assisted electrochemical deposition method. In this process, polymer and metal ions were deposited simultaneously at room temperature. The effects of different pore diameters of the anodized aluminum oxide (AAO) templates, concentration of electrolytes, and applied current on the growth of the magnetic wires were studied. The polycrystalline polymer-coated ferromagnetic-nanowire arrays were found to have high coercivity with PEG not affecting the magnetic properties. Relative to uncoated metal nanowires, the outer polymer coating strengthens high aspect ratio wires, preventing them from breaking as easily.

Engineering amyloid fibrils from β-solenoid proteins for biomaterials applications.

Nature provides numerous examples of self-assembly that can potentially be implemented for materials applications. Considerable attention has been given to one-dimensional cross-β or amyloid structures that can serve as templates for wire growth or strengthen materials such as glue or cement. Here, we demonstrate controlled amyloid self-assembly based on modifications of β-solenoid proteins. They occur naturally in several contexts (e.g., antifreeze proteins, drug resistance proteins) but do not aggregate in vivo due to capping structures or distortions at their ends. Removal of these capping structures and regularization of the ends of the spruce budworm and rye grass antifreeze proteins yield micron length amyloid fibrils with predictable heights, which can be a platform for biomaterial-based self-assembly. The design process, including all-atom molecular dynamics simulations, purification, and self-assembly procedures are described. Fibril formation with the predicted characteristics is supported by evidence from thioflavin-T fluorescence, circular dichroism, dynamic light scattering, and atomic force microscopy. Additionally, we find evidence for lateral assembly of the modified spruce budworm antifreeze fibrils with sufficient incubation time. The kinetics of polymerization are consistent with those for other amyloid formation reactions and are relatively fast due to the preformed nature of the polymerization nucleus.

Design and Construction of Optimized Electrochemical Cell and Data Analysis System for Etching of Ion Tracks and Electro Deposition of Nano and Micro Wires in Porous Ion Tracks Foils

In this work, an optimized computer controlled electrochemical cell were designed and constructed. This Electrolytic cell was used for etching latent ion tracks and electrochemical deposition of wires in pores of etched-ion tracks foils. The applied voltage and current through the electrochemical cell during the etching and electrodeposition were measured and monitored in real time by a Data Analysis system. Monitoring the current time curve during the filling of pores and growth of micro and nano wires allows one to stop the deposition process after a given time to obtain nano- and micro wire of a predefined length. In this work, Design and manufacture of a sealed electrochemical cell was done in a manner that one can change distance between electrodes and geometry of cathodes. Data analysis system was used to measuring and monitoring of applied voltage and current through the cell consists of three parts: Amplifier, Data acquisition (DAQ) system and Software. A current amplifier that used in data analysis system is a log ratio amplifier. A log ratio amplifier provides an output voltage proportional to the log base 10 of the ratio input current I1 (current during the electrodeposition of wire in cell) and Input current I2(flexible current of precision current source). A DAQ reading output voltage of amplifier and send to Computer. With lab view software analyzed the voltage and converted to the current corresponding to the electrodeposition of wires. Current amplifier designed and built in this work is a noise suppression that can measure small current through the cell with high accuracy. Advantage of proposed log ratio amplifier is one can used this amplifier for measuring and monitoring of current during the filling of pores and growth of wires in the etched ion track foils with various track density.

Response of reef corals on a fringing reef flat to elevated suspended-sediment concentrations: Moloka'i, Hawai'i.

A long-term (10 month exposure) experiment on effects of suspended sediment on the mortality, growth, and recruitment of the reef corals Montipora capitata and Porites compressa was conducted on the shallow reef flat off south Molokaʻi, Hawaiʻi. Corals were grown on wire platforms with attached coral recruitment tiles along a suspended solid concentration (SSC) gradient that ranged from 37 mg l−1 (inshore) to 3 mg l−1 (offshore). Natural coral reef development on the reef flat is limited to areas with SSCs less than 10 mg l−1 as previously suggested in the scientific literature. However, the experimental corals held at much higher levels of turbidity showed surprisingly good survivorship and growth. High SSCs encountered on the reef flat reduced coral recruitment by one to three orders of magnitude compared to other sites throughout Hawaiʻi. There was a significant correlation between the biomass of macroalgae attached to the wire growth platforms at the end of the experiment and percentage of the corals showing mortality. We conclude that lack of suitable hard substrate, macroalgal competition, and blockage of recruitment on available substratum are major factors accounting for the low natural coral coverage in areas of high turbidity. The direct impact of high turbidity on growth and mortality is of lesser importance.

In-situ observation of the growth of individual silicon wires in the zinc reduction reaction of SiCl4

We conducted in-situ monitoring of the formation of silicon wires in the zinc reduction reaction of SiCl4 at 950°C. Tip growth with a constant growth rate was observed. Some wires showed a sudden change in the growth direction during their growth. We also observed both the lateral faces and cross sections of formed wires using a scanning electron microscope. Although wires with smooth lateral faces had a smooth hexagonal cross section, those with rough lateral faces had a polygonal cross section with a radial pattern. The transition of lateral faces from smooth to rough was found even in a single wire. Because the diameter of the rough part became larger than that of the smooth part, we consider that the wire diameter is a key factor for the lateral faces. Our study revealed that both dynamic and static observations are still necessary to further understand the VLS growth of wires and nanowires.

Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates

Self-assembled quantum structures have been successfully grown for some time now but control over their uniformity has proven difficult due to the stochastic nature of surface diffusion. We have investigated the effect of vicinal InP(001) substrates on the uniformity of InAs quantum wires grown on InGaAlAs lattice-matched to InP using molecular beam epitaxy. Dense quantum wires were grown on both nominally flat and vicinal substrates off-cut by 0.9° toward the [110] direction for comparison. The off-cut angle was chosen to provide terraces which match the orientation and spacing of wires grown on nominally flat substrates. A modest but statistically significant improvement in the size distribution of the wires was observed on vicinal substrates through the analysis of ultrahigh resolution scanning electron micrographs. The interface between the wires and the off-cut substrate was studied using cross-sectional high resolution scanning transmission electron microscopy. In addition, a kinetic Monte Carlo model of epitaxial growth including full strain calculations was developed to further investigate the nucleation process. Using an anisotropic bond model to account for the surface energy of different crystallographic facets, our simulations produced wires similar to those observed experimentally while demonstrating the importance of anisotropic bonding compared to anisotropic diffusion. Growth on vicinal substrates is also simulated here and indicates that off-cut substrates should indeed improve the size distribution of quantum wires under proper growth conditions.

Microstructural and magnetic characterizations of CoFeCu electrodeposited in self-assembled mesoporous silicon

Abstract Self-assembled mesoporous silicon with quasi-regular pore arrangements has been fabricated by the electrochemical anodization process in hydrofluoric acid solution. CoFeCu was electrodeposited in this structure from a bath containing sodium acetate as a complexing agent with a pH value of 5. The effect of current density on the morphology, the structure and the magnetic properties of CoFeCu deposit was studied by SEM, EDS, DRX and VSM. It has been shown that the morphology and structure of samples were strongly influenced by the current density and etching duration. The micrographs show the vertical and branched nanowires and also a discontinuous growth of wires. Further, the growth of a thick layer from the grain boundaries of released CoFeCu wires is produced. The magnetic hysteresis loops demonstrate that the CoFeCu nanowires exhibit easy magnetic axis perpendicular to the PS channels axis when the current density varied from 3 to 10 mA/cm 2 . Nevertheless, they reveal a no magnetic anisotropy of CoFeCu nanostructures deposited only in the outside of porous silicon, probably due to the vanishing the shape anisotropy.

Room temperature mushrooming of gallium wires and its growth mechanism

Spontaneous growth of Ga wires at high rate (∼200nm/s) from a composite system of Cr2GaC (a MAX phase) and Ga is presented. A Ga wire growth mechanism based on a catalysis model, which involves fractured Cr2GaC grains as the catalyst, is proposed. Regarding the morphologies and the incubation time of the Ga wires, this system shares most features with metal/alloy substrates, such as tin and zinc, where the whiskering phenomenon has been well established and has resisted interpretation for 60+ years. The same growth mechanism is thus considered to operate across different substrates, including the composite one in this study. However, the experimental findings in this composite system oppose the popular stress-based mechanism for the whisker growth with metal/alloy substrates, and provide new sights on this phenomenon. In addition, compelling evidences strongly indicate that fractured Cr2GaC grains produced by ball milling initiated the growth of Ga wires, like a ‘catalyst’, and the pristine Cr2GaC grains do not have the catalytic effect on Ga wire growth. The new findings on Ga wire growth from Cr2GaC–Ga composite and the proposed mechanism would shed new light on uncovering the myths of the general whiskering phenomena.

Self-organization of mesoscopic silver wires by electrochemical deposition.

Long, straight mesoscale silver wires have been fabricated from AgNO3 electrolyte via electrodeposition without the help of templates, additives, and surfactants. Although the wire growth speed is very fast due to growth under non-equilibrium conditions, the wire morphology is regular and uniform in diameter. Structural studies reveal that the wires are single-crystalline, with the [112] direction as the growth direction. A possible growth mechanism is suggested. Auger depth profile measurements show that the wires are stable against oxidation under ambient conditions. This unique system provides a convenient way for the study of self-organization in electrochemical environments as well as for the fabrication of highly-ordered, single-crystalline metal nanowires.

Model for Hydrothermal Growth of Rutile Wires and the Associated Development of Defect Structures

Crystal defects play a major role in determining the electrical properties of semiconductors. Hydrothermally grown TiO2 rutile nanowire arrays are frequently used as electrodes in photovoltaic devices. However, they exhibit a characteristic defect structure that may compromise performance. A detailed scanning and transmission electron microscopy study of these defects reveals their internal structure and is suggestive at their origin. We propose an anisotropic layer-by-layer growth model, which combined with steric effects and Coulombic repulsion on high atom-density facets, can explain the observed V-shaped defect cascade in the nanowires.

Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid mechanism. The Au/Pt nanodots used to catalyse wire growth were defined lithographically and had varying diameter and separation. An in-depth statistical analysis of the resulting nanowires, which had a cone-like shape, was carried out. This revealed that there were two categories of nanowire present, with differing height and tapering angle. The bimodal nature of wire shape was found to depend critically on the diameter of the Au-Ga droplet atop the nanowire. Transmission electron microscopy analysis also revealed that the density of stacking faults in the wires varied considerably between the two categories of wire. It is believed that the cause of the distinction in terms of shape and crystal structure is related to the contact angle between the droplet and the solid-liquid interface. The dependency of droplet diameter on contact angle is likely related to line-tension, which is a correction to Young's equation for the contact angle of a droplet upon a surface. The fact that contact angle may influence resulting wire structure and shape has important implications for the planning of growth conditions and the preparation of wires for use in proposed devices.

Jumping-catalyst dynamics in nanowire growth.

Nanowire growth is generally considered a steady-state process, but oscillatory phenomena are known to often play a fundamental role. Here we identify a natural sequence of distinct growth modes, in two of which the catalyst droplet jumps periodically on and off a crystal facet. The oscillatory modes result from a mismatch between catalyst size and wire diameter; they enable growth of straight smooth-sided wires even when the droplet is too small to span the wire tip. Jumping-catalyst growth modes are seen both in computer simulations of vapor-liquid-solid growth, and in movies of Si nanowire growth obtained by insitu microscopy. Our simulations also provide new insight into nanowire kinking.