Abstract
We conducted in-situ monitoring of the formation of silicon wires in the zinc reduction reaction of SiCl4 at 950°C. Tip growth with a constant growth rate was observed. Some wires showed a sudden change in the growth direction during their growth. We also observed both the lateral faces and cross sections of formed wires using a scanning electron microscope. Although wires with smooth lateral faces had a smooth hexagonal cross section, those with rough lateral faces had a polygonal cross section with a radial pattern. The transition of lateral faces from smooth to rough was found even in a single wire. Because the diameter of the rough part became larger than that of the smooth part, we consider that the wire diameter is a key factor for the lateral faces. Our study revealed that both dynamic and static observations are still necessary to further understand the VLS growth of wires and nanowires.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
