Abstract

We report the fabrication of highly ordered arrays of tellurium nanowires and investigate their electrical, optical and structural properties. The tellurium nanowire arrays were synthesized by electrochemical deposition via a template method and characterized by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and UV–Visible spectroscopy. The XRD and FESEM characterizations confirm the formation of a dense crop of tellurium nanowire arrays with hexagonal phase. The intense crystalline peak corresponding to the (100) plane observed in the XRD spectra suggests a preferential growth of wires along the [001] direction. The crystallite size and micro-strain effect were estimated by Williamson–Hall (WH) analysis. The average crystallite size and lattice strain extracted from WH plot were found to be ∼34 nm and 0.0044, respectively. Further, electrical properties of the arrays of nanowires were examined using a two-probe method. The current–voltage curve of the tellurium wires exhibits a non-linear behavior and a double diode-like characteristic, which signifies their novel applications in future nanodevices.

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