Titanium–oxide films were deposited on Si wafers and/or quartz plates by a dynamic ion beam mixing method. High energy O+2 and/or O+ beams (30–40 keV) were injected during the deposition of Ti vapor onto the samples. Analysis of the film structure revealed the formation of TiO rather than TiO2, and the film growth varied from (111) to (200) plane of TiO with a decrease in the Ti:O arrival rate of Ti atoms and O+ ions onto the sample. Annealing of prepared films at 600 °C in the open air changed the film structure to include TiO2.