Abstract
A study has been made of the formation of titanium oxide by O + 2 -implantation into Ti. Ti sheets were implanted with O + 2 in the dose range of 2 × 10 17 to 2 × 10 18 O-atoms cm −2 at an energy of 150 keV at room temperature. The concentration depth profiles of C-, O-, and Ti-atoms and chemical bonding states of Ti were investigated by means of X-ray photoelectron spectroscopy (XPS) combined with Ar + sputter etching. The depth profiles of O-atoms for doses lower than 6 × 10 17 O-atoms cm −2 show Gaussian-like distributions. For doses higher than 1 × 10 18 O-atoms cm −2, the O-profile has an error-functional distribution. The result indicates that the O-atomic ratio does not exceed a stoichiometric ratio of TiO 2, which was confirmed by the binding energy spectra for Ti 2 p 3 2 obtained from XPS measurements. From the O-dose dependence of X-ray diffraction patterns, TiO(220), formed in the lower dose region of 4 × 10 17 to 6 × 10 17 O-atoms cm −2, disappeared over 1 × 10 18 O-atoms cm −2. Only rutile structure appeared over 1 × 10 18 O-atoms cm −2, and no signal of the other structures, anatase and brookite, could be found. The effect of Vickers hardness and photo-electrochemical behaviour on the formation of titanium oxide is discussed.
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