Flexible Polyimide Substrate Research Articles

High-performance flexible p-type Ce-filled Fe3CoSb12 skutterudite thin film for medium-to-high-temperature applications

P-type Fe3CoSb12-based skutterudite thin films are successfully fabricated, exhibiting high thermoelectric performance, stability, and flexibility at medium-to-high temperatures, based on preparing custom target materials and employing advanced pulsed laser deposition techniques to address the bonding challenge between the thin films and high-temperature flexible polyimide substrates. Through the optimization of fabrication processing and nominal doping concentration of Ce, the thin films show a power factor of >100 μW m−1 K−2 and a ZT close to 0.6 at 653 K. After >2000 bending cycle tests at a radius of 4 mm, only a 6 % change in resistivity can be observed. Additionally, the assembled p-type Fe3CoSb12-based flexible device exhibits a power density of 135.7 µW cm−2 under a temperature difference of 100 K with the hot side at 623 K. This work fills a gap in the realization of flexible thermoelectric devices in the medium-to-high-temperature range and holds significant practical application value.

Van der Waals Epitaxial Growth of Ultrathin Indium Antimonide on Arbitrary Substrates through Low-Thermal Budget.

III-V semiconductors possess high mobility, high frequency response, and detection sensitivity, making them potentially attractive for beyond-silicon electronics applications. However, the traditional heteroepitaxy of III-V semiconductors is impeded by a significant lattice mismatch and the necessity for extreme vacuum and high temperature conditions, thereby impeding their in situ compatibility with flexible substrates and silicon-based circuits. In this study, a novel approach is presented for fabricating ultrathin InSb single-crystal nanosheets on arbitrary substrates with a thickness as thin as 2.4nm using low-thermal-budget van der Waals (vdW) epitaxy through chemical vapor deposition (CVD). In particular, in situ growth has been successfully achieved on both silicon-based substrates and flexible polyimide (PI) substrates. Notably, the growth temperature required for InSb nanosheets (240°C) is significantly lower than that employed in back-end-of-line processes (400°C). The field effect transistor devices based on fabricated ultrathin InSb nanosheets exhibit ultra-high on-off ratio exceeding 108 and demonstrate minimal gate leakage currents. Furthermore, these ultrathin InSb nanosheets display p-type characteristics with hole mobilities reaching up to 203 cm2 V-1 s-1 at room temperatures. This study paves the way for achieving heterogeneous integration of III-V semiconductors and facilitating their application in flexible electronics.

A simple and highly sensitive flexible sensor with extended-gate field-effect transistor for epinephrine detection utilizing InZnSnO sensing films

This study introduces a straightforward method for depositing InZnSnO films onto flexible polyimide substrates at room temperature, enabling their application in electrochemical pH sensing and the detection of epinephrine. A comprehensive analysis of these sensing films, spanning structural, morphological, compositional, and profiling characteristics, was conducted using diverse techniques, including X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectroscopy. The investigation into the influence of oxygen flow rates on the performance of InZnSnO sensitive films revealed a significant correlation between their structural properties and sensing capabilities. Notably, exposure to an oxygen flow rate of 30/2 (Ar/O2) the ratio of resulted in the InZnSnO sensitive film demonstrating outstanding pH sensitivity at 59.58 mV/pH within a broad pH range of 2–12, surpassing the performance observed with other oxygen flow rates. Moreover, under this specific condition, the film exhibited excellent stability, with a minimal drift rate of 0.14 mV/h at pH 7 and a low hysteresis voltage of 1.8 mV during a pH cycle of 7 → 4→7 → 10→7. Given the critical role of epinephrine in mammalian central nervous and hormone systems, monitoring its levels is essential for assessing human health. To facilitate the detection of epinephrine, we utilized the carboxyl group of 4-formylphenylboronic acid to enable a reaction with the amino group of the 3-aminopropyltriethoxysilane-coated InZnSnO film. Through optimization, the resulting InZnSnO-based flexible sensor displayed a broad and well-defined linear relationship within the concentration range of 10−7 to 0.1 μM. In practical applications, this sensor proved effective in analyzing epinephrine in human serum, showcasing notable selectivity, stability, and reproducibility. The promising outcomes of this study underscore the potential for future applications, leveraging the advantages of electrochemical sensors, including affordability, rapid response, and user-friendly operation.

Synthesis of ZnO nanorods decorating with Ag nanoparticles on flexible polyimide substrate for visible photodetector application

Polyimide (PI), which have many remarkable features such as excellent mechanical strength, outstanding thermal stability, exceptional electric properties, etc, is a potential carrier for optoelectronic devices due to its abundant applications. However, because of chemical inertness and smooth surface that led to the growth of materials on this substrate being more complex than that on rigid substrate, thus, this report aims to emphasise the synthesis of ZnO NRs decorated with the Ag NPs on flexible substrate for photodetector application. In this study, we successfully synthesise ZnO NRs/Ag NPs on a flexible PI substrate by the hydrothermal method. The performance of our photodetector in visible region (395 nm) exhibits via the responsivity of the device, which recorded value of ca. 40.16 mA W−1 at 1.66 mW cm−2. With obtained results, our research can pave the way for future studies based on flexible optoelectronic devices.

Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance

High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and preferentially (−1 1 1)-orientated. When the oxygen supply increased from 1% to 3%, the excitation/ionization rate of the plasma species increased, leading to higher crystallinity, higher density, and lower oxygen vacancy defect concentration of the film, therefore improving the dielectric properties of the film. When the oxygen supply further increased to 5%, the excitation/ionization rate decreased, thereby leading to lower crystallinity, lower density, and higher oxygen vacancy defect concentration of the film, therefore deteriorating the dielectric properties of the film. The film deposited at 3% oxygen supply exhibited the best dielectric properties with the highest k value of 24 and the highest breakdown-electric field (4.7 MV/cm), which should be attributed to the high crystallinity, high density and low oxygen vacancy defect concentration of the film. Finally, transparent thin film transistors (TFTs) with ITO gate electrode, HfO2 gate dielectric layer and indium-gallium-zinc oxide channel were fabricated on flexible colorless polyimide substrate at full room temperature by all HiPIMS process. The fixed positive charges and k value of HfO2 film have significant effects on the TFT performance. The best TFT exhibited good electrical performance, featuring a remarkably low subthreshold swing of 0.13 V/decade. It also exhibited fair stability against bending and gate bias stress.

Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate

Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate

Innovative flexible and compact patch antenna for multiband terahertz applications

Terahertz antennas have garnered significant attention for use in the fields of telecommunications and medical applications. One of the major issues with THz antennas is the integration of flexibility with multiband characteristics. This article focuses on designing and constructing a new, compact, and flexible dual-band THz antenna using different slots for terahertz applications. The essence of the antenna design is rooted in a careful strategy for positioning slots, both on the ground plane and within the patch. The rising need for flexible electronics is the primary motivation behind the investigation of this flexible, multiband antenna. The examined antenna is supported by a flexible polyimide substrate with small dimensions of 1.5 × 1 × 0.15 mm3. Several adjustments are made to the radiating patch to enable multiband functionality, resulting in operation at 123 GHz and 180.4 GHz. The corresponding return losses are -35.03 dB and -38.71 dB, while the bandwidths for the two frequency bands are 3.3 % and 8.86 %, respectively. For all working bands, the VSWR of the given antenna is lower than 2, with a gain of 4.12 dB and 5.05 dB at the resonating frequency, as well as a radiation efficiency of 81.6 % and 89.3 % inside the resonating bands. Moreover, a parametric investigation was additionally carried out to ascertain the ideal dimensions of the suggested antenna. As the antenna is constructed using a flexible substrate, this article also delves into the analysis of antenna bending in both the x- and y-axes. The suggested antenna can be applied in modern handheld fifth-generation (5 G) and terahertz medical imaging applications, such as breast cancer detection.

Copper-Enriched Nanostructured Conductive Thermoelectric Copper(I) Iodide Films Obtained by Chemical Solution Deposition on Flexible Substrates

The objects of our research are flexible thin-film thermoelectric materials with nanostructured CuI layers 0.5–1.0 μm thick, fabricated by the chemical solution method Successive Ionic Layer Adsorption and Reaction (SILAR) on flexible polyethylene terephthalate and polyimide substrates. These cubic γ-CuI films differ from films obtained by other chemical solution methods, such as spin-coating, sputtering, and inject printing, in their low resistivity due to acceptor impurities of sulfur and oxygen introduced into CuI from aqueous precursor solutions during SILAR deposition. Energy barriers at the boundaries of 18–22 nm CuI nanograins and a large number of charge carriers inside the nanograins determine the transport properties in the temperature interval 295–340 K characterized by transitions from semiconductor to metallic behavior with increasing temperature, which are typical of nanostructured degenerate semiconductors. Due to the resistivity of about 0.8 mΩ· m at 310 K and the Seebeck coefficient 101 μV/K, the thermoelectric power factor of the CuI film 1.0 μm thick on the polyimide substrate is 12.3 μW/(m · K2), which corresponds to modern thin-film p-type thermoelectric materials. It confirms the suitability of CuI films obtained by the SILAR method for the fabrication of promising inexpensive non-toxic flexible thermoelectric materials.

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams.

The increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now mandating the use of in vivo dosimetry, whereby a dosimeter is placed on the surface of the patient during treatment. Ideally, in vivo detectors should be flexible to conform to a patient's irregular surfaces. This study aims to characterize a novel hydrogenated amorphous silicon (a-Si:H) radiation detector for the dosimetry of therapeutic x-ray beams. The detectors are flexible as they are fabricated directly on a flexible polyimide (Kapton) substrate. The potential of this technology for application as a real-time flexible detector is investigated through a combined dosimetric and flexibility study. Measurements of fundamental dosimetric quantities were obtained including output factor (OF), dose rate dependence (DPP), energy dependence, percentage depth dose (PDD), and angular dependence. The response of the a-Si:H detectors investigated in this study are benchmarked directly against commercially available ionization chambers and solid-state diodes currently employed for QA practices. The a-Si:H detectors exhibit remarkable dose linearities in the direct detection of kV and MV therapeutic x-rays, with calibrated sensitivities ranging from (0.580±0.002) pC/cGy to (19.36±0.10) pC/cGy as a function of detector thickness, area, and applied bias. Regarding dosimetry, the a-Si:H detectors accurately obtained OF measurements that parallel commercially available detector solutions. The PDD response closely matched the expected profile as predicted via Geant4 simulations, a PTW Farmer ionization chamber and a PTW ROOS chamber. The most significant variation in the PDD performance was 5.67%, observed at a depth of 3mm for detectors operated unbiased. With an external bias, the discrepancy in PDD response from reference data was confined to±2.92% for all depths (surface to 250mm) in water-equivalent plastic. Very little angular dependence is displayed between irradiations at angles of 0° and 180°, with the most significant variation being a 7.71% decrease in collected charge at a 110° relative angle of incidence. Energy dependence and dose per pulse dependence are also reported, with results in agreement with the literature. Most notably, the flexibility of a-Si:H detectors was quantified for sample bending up to a radius of curvature of 7.98mm, where the recorded photosensitivity degraded by (-4.9±0.6)% of the initial device response when flat. It is essential to mention that this small bending radius is unlikely during in vivo patient dosimetry. In a more realistic scenario, with a bending radius of 15-20mm, the variation in detector response remained within±4%. After substantial bending, the detector's photosensitivity when returned to a flat condition was (99.1±0.5)% of the original response. This work successfully characterizes a flexible detector based on thin-film a-Si:H deposited on a Kapton substrate for applications in therapeutic x-ray dosimetry. The detectors exhibit dosimetric performances that parallel commercially available dosimeters, while also demonstrating excellent flexibility results.

High efficient personal thermoregulatory device: Metallized interface layer between flexible polyimide substrate and foam copper heat sink enables thermal resistance reduction

Customizable flexible thermoelectric devices (f-TED) designed for personal thermal management (PTM) have the potential to substantially diminish energy consumption while enhancing comfort. Currently, studies focus on optimizing thermoelectric device performance and reducing radiator thermal resistance, neglecting the crucial interface between them. In this innovative work, the interface layer between the flexible polyimide substrate of f-TED and the foam copper heat sink was metallized, thereby significantly mitigating the thermal resistance at the interface. In contrast to the conventional thermal conductive adhesive, the metallized welding thermoelectric system (4 × 4 cm² in the plane) demonstrates a 37.0 % augmentation in cooling temperature difference (5.4 ℃ → 7.4 ℃) at 0.3 A. When bending 1000 times (r: ∞ → 20 mm → ∞ → …), the change rate of internal resistance is less than 1.5 %. At a temperature difference of 20 K, it reaches a maximum output power as high as 4.45 mW. Furthermore, an intelligent personal thermal management system was developed. Users can monitor and adjust the working status of the f-TED in real-time via a mobile terminal, achieving personalized thermoregulation. In actual human wear tests, the highest cooling temperature difference reached 13.7 °C, which is one of the highest reported values. This work holds significant implications for advancing f-TED technology innovation, personalized thermoregulation, energy conservation, and environmental protection.

Flexible Unipolar IGZO Transistor-Based Integrate and Fire Neurons for Spiking Neuromorphic Applications.

In this article, three different implementations of an Axon-Hillock circuit are presented, one of the basic building blocks of spiking neural networks. In this work, we explored the design of such circuits using a unipolar thin-film transistor technology based on amorphous InGaZnO, often used for large-area electronics. All the designed circuits are fabricated by direct material deposition and patterning on top of a flexible polyimide substrate. Axon-Hillock circuits presented in this article consistently show great adaptability of the basic properties of a spiking neuron such as output spike frequency adaptation and output spike width adaptation. Additional degrees of adaptability are demonstrated with each of the Axon-Hillock circuit varieties: neuron circuit threshold voltage adaptation, differentiation between input signal importance, and refractory period modulation. The proposed neuron can change its firing frequency up to three orders of magnitude by varying a single voltage brought to a circuit terminal. This allows the neuron to function, and potentially learn, at vastly different timescales that coincide with the biologically meaningful timescales, going from milliseconds to seconds, relevant for circuits meant for interaction with the environment. Thanks to careful design choices, the average measured power consumption is kept in the nW range, realistically allowing upscaling towards the spiking neural networks in the future. The spiking neuron with refractory period modulation presented in this work has an area of 607.3 μm × 492.2 μm, it experimentally demonstrated firing rates as low as 11.926 mHz, and its energy consumption per spike is ≈ 700 pJ at 30 Hz.

Transversely graded polarization volume gratings fabricated by freeform holographic photoalignment.

Polarization volume gratings (PVGs) based on chiral nematic liquid crystals offer a great potential as polarization-dependent holographic optical elements, but it is not easy to fabricate PVGs with varying pattern periods in the transverse plane. Here, we fabricate a PVG with an in-plane gradient of the pattern period by performing two-beam interference photoalignment on a flexible polyimide substrate. The pattern period varies depending on the local interference angle, which is controlled by the bent shape of the flexible substrate. We demonstrate fabrication of a PVG with a linearly graded sub-micrometer period, showing the potential of the proposed method to fabricate designer PVGs.

Inkjet‐Printed Flexible Thin‐Film Thermal Sensors for Detecting Elevated Temperature Range

All inkjet‐printed thermal sensors are manufactured based on a metal–insulator–metal (MIM) interface or capacitor architecture, for the adapted device size ranging from 16 to 36 mm2 active area. Two different material inks, namely a nanoparticle conductive silver ink and an inorganic‐polymer‐based hybrid insulator ink, are applied layer by layer on a thin flexible polyimide substrate, for developing the printed MIM devices. To ensure the desired electronic conductivity and insulation from the layers, the manufacturing process steps and parameters are tuned, accordingly. The results show that the inkjet‐printed MIM devices could constitute up to 15 μm thickness and demonstrate average detection of a change in electrical capacitance ranging from 20 to 100 pF, when the temperature is varied between 100 and 300 °C. The investigations also summarize that the change in the electrical response is enough to detect an increment of 50 °C. The printed sensors also display high operational stability and repeatability, when subjected to thermal cycling.

A Laser-Induced Graphene-Based Sensor Modified with CeO2 for Determination of Organophosphorus Pesticides with Improved Performance

In this work, a flexible electrochemical sensor was developed for the detection of organophosphorus pesticides (OPs). To fabricate the sensor, graphene was generated in situ by laser-induced graphene (LIG) technology on a flexible substrate of polyimide (PI) film to form a three-electrode array, and pralidoxime (PAM) chloride was used as the probe molecule. CeO2 was used to modify the working electrode to improve the sensitivity of the sensor because of its electrocatalytic effect on the oxidation of PAM, and the Ag/AgCl reference electrode was prepared by the drop coating method. The effects of the laser power, laser scanning speed, and CeO2 modification on the electrochemical properties of the sensor were studied in detail. The results prove that the sensor has good repeatability, stability, and anti-interference ability, and it shows an excellent linear response in the chlorpyrifos concentration range from 1.4 × 10−8 M to 1.12 × 10−7 M with the detection limit of 7.01 × 10−10 M.

In Situ Rapid Fabrication of Graphene-Copper Heterojunctions Using Fiber Laser Direct Writing.

Multifunctional three-dimensional heterostructures for flexible electronics have gained significant attention due to their distinctive structural formability and superior electronic and optoelectronic properties. Nevertheless, conventional fabrication techniques have yet to be optimized for flexible substrates. In this study, a straightforward fiber laser direct writing (FLDW) process is demonstrated for the simultaneous fabrication of diodes (PN junctions) and bipolar junction transistors (BJTs) on flexible polyimide substrates, which is realized through the deposition of multifunctional p- or n-type copper oxide films (CuOx) and p- or n-type porous laser-reduced graphene oxide films (LrGO) using fiber laser ablation and deposition. The presence of both p- and n-type semiconductor films is confirmed through material characterization. The fabricated PN junctions exhibit reasonable diode rectification ratios, ranging from 20 to 220, and perform reliably under numerous operating conditions such as light-dark illumination and elevated temperatures. Furthermore, I-V curve analysis indicates that the current gain and electrical performance of printed negative-positive-negative (NPN) (or positive-negative-positive, PNP) BJTs can be tailored by adjusting the laser energy density of the FLDW process and the base gap width of the BJTs. As a proof of concept, the FLDW process is successfully employed to deposit both NPN (or PNP) BJTs composed of LrGO/CuOx heterostructures with controlled current gains. Its ease of operation, versatility, and cost-effectiveness make FLDW promising for large-scale flexible electronics fabrication.

In Situ Synthesis of High Thermoelectric Performance Bi2Te3 Flexible Thin Films through Thermal Diffusion Engineering

Bi2Te3-based materials are promising candidates for near-room-temperature applications due to their high thermoelectric performance and low cost. Here, an innovative thermal diffusion strategy combined with magnetron sputtering and thermal evaporation methods was employed to fabricate Bi2Te3 flexible thin films (f-TFs) on a flexible polyimide substrate. An in situ synthesis of Bi2Te3 f-TFs with good crystallinity was obtained using a straightforward thermal diffusion method through diffusion of Te into a Bi precursor under low vacuum conditions (1 × 105 Pa). This method offers easy preparation, low cost, and a large-area film preparation for industrialization. The electrical conductivity increases with increasing thermal diffusion temperatures. A high room temperature carrier mobility of ~28.7 cm−2 V−1 S−1 and an electrical conductivity of ~995.6 S cm−1 can be achieved. Then, a moderate room temperature Seebeck coefficient >100 μV K−1 was obtained due to the chemical stoichiometry being close to the standard by optimizing the thermal diffusion temperature. Consequently, a maximum room temperature PF of ~11.6 μW cm−1 K−1 was observed in Bi2Te3 f-TFs prepared using a thermal diffusion temperature of 653 K. The thermal diffusion strategy applied in the thin film preparation represents an effective approach for the preparation of high thermoelectric performance Bi2Te3 f-TFs, offering a promising route for future thermoelectric applications.

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate

Two-dimensional transition metal dichalcogenides (TMDs), as flexible and stretchable materials, have attracted considerable attention in the field of novel flexible electronics due to their excellent mechanical, optical, and electronic properties. Among the various TMD materials, atomically thin MoS2 has become the most widely used material due to its advantageous properties, such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer-scale two-layer MoS2 film obtained by transferring multiple single-layer films grown using chemical vapor deposition. The MoS2 field-effect transistor cell had a top-gated device structure with a (PI) film as the substrate, which exhibited a high on/off ratio (108), large average mobility (∼8.56 cm2 V−1 s−1), and exceptional uniformity. Furthermore, a range of flexible integrated logic devices, including inverters, NOR gates, and NAND gates, were successfully implemented via traditional lithography. These results highlight the immense potential of TMD materials, particularly MoS2, in enabling advanced flexible electronic and optoelectronic devices, which pave the way for transformative applications in future-generation electronics.

Achieving Ideal and Environmentally Stable n-Type Charge Transport in Polymer Field-Effect Transistors.

Realizing ideal charge transport in field-effect transistors (FETs) of conjugated polymers is crucial for evaluating device performance, such as carrier mobility and practical applications of conjugated polymers. However, the current FETs using conjugated polymers as the active layers generally show certain non-ideal transport characteristics and poor stability. Here, ideal charge transport of n-type polymer FETs is achieved on flexible polyimide substrates by using an organic-inorganic hybrid double-layer dielectric. Deposited conjugated polymer films show highly ordered structures and low disorder, which are supported by grazing-incidence wide-angle X-ray scattering, near-edge X-ray absorption fine structure, and molecular dynamics simulations. Furthermore, the organic-inorganic hybrid double-layer dielectric provides low interfacial defects, leading to excellent charge transport in FETs with high electron mobility (1.49 ± 0.46 cm2V-1s-1) and ideal reliability factors (102 ± 7%). Fabricated polymer FETs show a self-encapsulation effect, resulting in high stability of the FET charge transport. The polymer FETs still work with high mobility above 1 cm2V-1s-1 after storage in air for more than 300 days. Compared with state-of-the-art conjugated polymer FETs, this work simultaneously achieves ideal charge transport and environmental stability in n-type polymer FETs, facilitating rapid device optimization of high-performance polymer electronics.

Tolerance to deformation and flux pinning in superconducting amorphous molybdenum nitride thin films grown on flexible polyimide

We investigate the superconducting properties of 80 nm thick amorphous MoNx films fabricated via reactive sputtering on silicon and flexible commercial polyimide substrates. The samples are grown at room temperature using reactive sputtering with a gas mixture of N2 and Ar. The mechanical deformation tolerance for films on polyimide is evaluated by comparing the superconducting critical temperature (Tc) and critical current density (Jc) when the films are attached to cooper surfaces with varying curvatures. The amorphous films exhibit a Tc of 8.2 K on silicon and 7.9 K on polyimide. Our results demonstrate a significant enhancement in flux pinning for the thin films grown on polyimide, with the Jc at self-field and 3 K increasing from approximately 0.5 MA/cm2 to around 1 MA/cm2. Analyses of Jc as a function of the magnetic field, angle, and temperature reveal that the films on polyimide exhibit remarkable resilience to deformation. Interestingly, comparable Jc values are observed when the samples are affixed to both flat and cylindrical surfaces with diameters of 2.5 cm. This observation suggests that vortex dissipation predominantly occurs through flux motion in the region experiencing the maximum Lorentz force. Furthermore, the films maintain Tc without any discernible changes in resistivity when fixed to cylindrical surfaces with 1.2 cm diameters. However, there is a significant drop in vortex pinning, indicating reduced pinning capability in the stressed regions. The high deformation tolerance of amorphous MoNx renders it highly suitable for cryogenic electronics applications, providing a viable alternative to the commonly utilized metallic Nb.

A Conformal Dual-Band CPW-MIMO Antenna for 5G-V2X Communication

A Co-Planar Waveguide (CPW) fed conformal Multiple Input Multiple Output (MIMO) antenna is presented by deploying circular and rectangular patch in a stacked configuration. The analytical equations for the antenna are modeled and compared with the proposed antenna. The antenna is designed on a flexible polyimide substrate featuring a dielectric value of 3.5 with 0.1 mm thickness resonating at two frequencies, LTE-42 Band (5G-V2X) 3.4-3.6 GHz and Dedicated Short Range Communication (DSRC) 5.850-5.925 GHz. The design is further extended as a 4 × 4 MIMO structure by positioning the antenna elements orthogonal, separated by a distance of 10 mm. The antenna exhibits a reflection coefficient < −10 dB with a gain value between 4.5 and 5.25 dB over the desired frequencies. The radiation efficiency of the antenna is around 90% at both bands. MIMO parameters were measured to analyze the MIMO performance of the proposed antenna and the placement analysis of the antenna is studied by mounting the antenna on various vehicle positions and their corresponding pattern were characterized. The designed MIMO antenna is fabricated and tested, having an overall size of 85 × 85 × 0.1 mm3, offering extremely flexible design functioning to be a promising candidate for next-generation V2X Communication.