Quality Of Films Research Articles

Amine-releasable Mediator In situ Repair Perovskites for Efficient and Stable Perovskite Solar Cells.

Residual lead iodide (PbI2) is deemed to a double-edged sword in perovskite film as small amounts of PbI2 are beneficial to the photovoltaic performance, but excessive will cause degradation of photovoltaic performance and stability. Herein, an in situ repair strategy has been developed by introducing amine-releasable mediator (methylammonium pyridine-2-carboxylic, MAPyA) to eliminate over-residual PbI2 and regulate the crystal quality of perovskite film. Notably, MAPyA can be partially decomposed into methylamine (MA) gas and pyridine-2-carboxylic (PyA) during high temperature annealing. The released MA can locally form liquid intermediate phase, facilitating the reconstruction of perovskite microcrystals and residual PbI2. Moreover, the leftover PyA is confirmed to effectively passivate the uncoordinated lead ions in final perovskite film. Based upon this, superior perovskite film with optimized crystal structure and holistic negligible PbI2 is acquired. The assembled device realizes outstanding efficiency of 24.06 %, and exhibits a remarkable operational stability that maintaining 87 % of its origin efficiency after continuous illumination for 1480 h. And the unencapsulated MAPyA-treated devices present significant uplift in humidity stability (maintaining ~93 % of the initial efficiency over 1500 h, 50-60 % relative humidity). Furthermore, the further optimization of this strategy with nanoimprint technology proves its superiority in the amplificative preparation for perovskite films.

Amine‐releasable Mediator In situ Repair Perovskites for Efficient and Stable Perovskite Solar Cells

AbstractResidual lead iodide (PbI2) is deemed to a double‐edged sword in perovskite film as small amounts of PbI2 are beneficial to the photovoltaic performance, but excessive will cause degradation of photovoltaic performance and stability. Herein, an in situ repair strategy has been developed by introducing amine‐releasable mediator (methylammonium pyridine‐2‐carboxylic, MAPyA) to eliminate over‐residual PbI2 and regulate the crystal quality of perovskite film. Notably, MAPyA can be partially decomposed into methylamine (MA) gas and pyridine‐2‐carboxylic (PyA) during high temperature annealing. The released MA can locally form liquid intermediate phase, facilitating the reconstruction of perovskite microcrystals and residual PbI2. Moreover, the leftover PyA is confirmed to effectively passivate the uncoordinated lead ions in final perovskite film. Based upon this, superior perovskite film with optimized crystal structure and holistic negligible PbI2 is acquired. The assembled device realizes outstanding efficiency of 24.06 %, and exhibits a remarkable operational stability that maintaining 87 % of its origin efficiency after continuous illumination for 1480 h. And the unencapsulated MAPyA‐treated devices present significant uplift in humidity stability (maintaining ~93 % of the initial efficiency over 1500 h, 50–60 % relative humidity). Furthermore, the further optimization of this strategy with nanoimprint technology proves its superiority in the amplificative preparation for perovskite films.

The Influence of Tear Film Quality on Visual Function.

The prevalence of dry eye disease (DED) is increasing globally, resulting in a variety of eye symptoms characterized by discomfort and visual disturbances. The accurate diagnosis of the disease is often challenging and complex, requiring specialized diagnostic tools. This study aimed to investigate the impact of tear film instability on visual function and to evaluate the value of post-blink blur time (PBBT) as an alternative method for assessing tear film stability. The study included 62 subjects: 31 with subjective symptoms of DED (Group A) and a control group consisting of 31 healthy participants (Group B). Symptoms were assessed using the standard Schein questionnaire, supplemented with additional questions. PBBT was measured using standard Snellen charts to investigate a potential association between PBBT and tear film dysfunction. Additional clinical assessments included tear film break-up time (TBUT). Statistically significant differences were observed in the average values of PBBT and TBUT between the examined groups. The average PBBT was 8.95 ± 5.38 s in the group with DED and 14.66 ± 10.50 s in the control group, p < 0.001. Group A exhibited an average TBUT of 4.77 ± 2.37 s, while Group B had a TBUT of 7.63 ± 3.25 s, p < 0.001. Additionally, a strong positive correlation was identified between PBBT and TBUT values (r = 0.455; p < 0.001). The research confirms that tear film stability has an important role in the refraction of light and the maintenance of optical quality of vision. PBBT could potentially function as an objective and clinically significant screening test for DED.

Spider Silk/Hemin Biobased Electrets for Organic Phototransistor Memory: A Comprehensive Study on Solution Process Engineering

AbstractThe escalating environmental impact of pollution and the imperative to reduce carbon emissions have heightened the significance of developing biobased materials from natural biomass for electronic devices. This study investigates the utilization of biofermentation‐produced recombinant spider silk and animal‐derived hemin to create a novel biobased electret for field‐effect transistor memory. A critical challenge arises from the incompatibility between natural photoresponsive molecules and insulating biomaterials, resulting in severe phase separation that compromises film quality and morphology uniformity. This study systematically examines the effects of various film deposition and manufacturing techniques on the biobased electret's morphology, phase separation, and performance. Different methods demonstrate distinct advantages in terms of molecular aggregation/segregation, morphological homogeneity, and device performance. Phototransistor memory devices fabricated using spin coating and spray coating techniques exhibit robust aggregations and high memory windows of ≈30 V. Conversely, devices produced through solution shearing and electrospinning methods display enhanced smooth morphologies and high photoresponsivity. The phototransistor memory comprising electrospun fibers holds the potential to achieve the highest memory ratio, reaching ≈105. These findings not only highlight the applications of biobased materials through scalable film deposition processes but also underscore the importance of refining their morphology, phase separation, and performance in optoelectronic devices.

Exceptional Thermoelectric Performance of Cu2(Zn,Fe,Cd)SnS4 Thin Films.

High-quality Cu2(Zn,Fe,Cd)SnS4 (CZFCTS) thin films based on the parent CZTS were prepared by aerosol-assisted chemical vapor deposition (AACVD). Substitution of Zn by Fe and Cd significantly improved the electrical transport properties, and monophasic CZFCTS thin films exhibited a maximum power factor (PF) of ∼0.22 μW cm-1 K-2 at 575 K. The quality and performance of the CZFCTS thin films were further improved by postdeposition annealing. CZFCTS thin films annealed for 24 h showed a significantly enhanced maximum PF of ∼2.4 μW cm-1 K-2 at 575 K. This is higher than all reported values for single-phase quaternary sulfide (Cu2BSnS4, B = Mn, Fe, Co, Ni) thin films and even exceeds the PF for most polycrystalline bulk materials of these sulfides. Density functional theory (DFT) calculations were performed to understand the impact of Cd and Fe substitution on the electronic properties of CZTS. It was predicted that CZFCTS would have a smaller band gap than CZTS and a higher density of states (DoS) near the Fermi level. The thermal conductivity and thermoelectric figure of merit (zT) of the CZFCTS thin films have been evaluated, yielding an estimated maximum zT range of 0.18-0.69 at 550 K. The simple processing route and improved thermoelectric performance make CZFCTS thin films extremely promising for thermoelectric energy generation.

Optimizing Energy Levels and Improving Film Compactness in PbS Quantum Dot Solar Cells by Silver Doping.

PbS quantum dot (QD) solar cells harvest near-infrared solar radiation. Their conventional hole transport layer has limited hole collection efficiency due to energy level mismatch and poor film quality. Here, how to resolve these two issues by using Ag-doped PbS QDs are demonstrated. On the one hand, Ag doping relieves the compressive stress during layer deposition and thus improves film compactness and homogeneity to suppress leakage currents. On the other hand, Ag doping increases hole concentration, which aligns energy levels and increases hole mobility to boost hole collection. Increased hole concentration also broadens the depletion region of the active layer, decreasing interface charge accumulation and promoting carrier extraction efficiency. A champion power conversion efficiency of 12.42% is achieved by optimizing the hole transport layer in PbS QD solar cells, compared to 9.38% for control devices. Doping can be combined with compressive strain relief to optimize carrier concentration and energy levels in QDs, and even introduce other novel phenomena such as improved film quality.

Boosting CsSnI3‐based near‐infrared perovskite light‐emitting diodes performance via solvent coordination engineering

AbstractDue to their unique photoelectric properties, nontoxic tin‐based perovskites are emerging candidates for efficient near‐infrared LEDs. However, the facile oxidation of Sn2+ and the rapid crystallization rate of tin‐based perovskites result in suboptimal film quality, leading to inferior efficiencies of tin‐based perovskite light‐emitting diodes (Pero‐LEDs). In this study, we investigate the influence of commonly used solvents on the quality of the CsSnI3 films. Remarkably, DMSO exhibits a stronger interaction with SnI2, forming a stable intermediate phase of SnI2·3DMSO. This intermediate effectively inhibits the oxidation of Sn2+ and slows down the crystallization rate, bringing in lower defect state density and higher photoluminescence quantum yield of the prepared perovskite films. Consequently, the corresponding Pero‐LEDs achieve a maximum external quantum efficiency (EQE) of 5.6%, among the most efficient near‐infrared Pero‐LEDs. In addition, the device processes ultra‐low efficiency roll‐off and high reproducibility. Our research underscores the crucial role of solvent‐perovskite coordination in determining film quality. These findings offer valuable guidance for screening solvents to prepare highly efficient and stable tin‐based perovskites.

Zwitterion Dual-Modification Strategy for High-Quality NiOx and Perovskite Films for Solar Cells.

Nickel oxide (NiOx) has been limited in use as a hole transport layer for its low conduction, surface defects, and redox reactions with the perovskite layer. To address these issues, the incorporation of zwitterion L-tryptophan (Trp) is proposed at the NiOx/Trp interface. The carboxyl group of Trp effectively passivates the surface positive defects of NiOx, thereby improving its optical and electrical properties. The ammonium group of Trp not only passivates negative defects but modulates the growth of the perovskite layer, resulting in an improved perovskite film quality. Furthermore, the Trp layer acts as a buffer layer, suppressing adverse interfacial reactions between the perovskite and NiOx. Consequently, perovskite solar cells with 1.56 and 1.68eV absorbers achieve the champion power conversion efficiency(PCE) of 23.79% and 20.41%, respectively. Moreover, the unencapsulated devices demonstrate excellent long-term stability, retaining above 80% of the initial PCE value after 1600 h of storage in the air with a humidity of 50-60%.

Hot-Antisolvent Assisted Morphological Regulation of Perovskites for Semitransparent Photovoltaics Employing Hot-Pressing Approach

The processing of halide perovskites in the air significantly influences their morphology and surface coverage, often leading to the presence of numerous trap densities that adversely affect device performance. In this study, we explored the development of perovskite films using a solvent extraction method, where the temperature of the anisole antisolvent was varied. Our findings demonstrate that the hot-antisolvent strategy effectively controls nucleation, resulting in the formation of highly dense, pinhole-free, and crack-free perovskite films with reduced surface roughness. Films fabricated using this hot-antisolvent approach exhibited enhanced photoluminescence, indicating lower trap density and increased recombination resistance. They also showed slower charge carrier recombination rates and efficient charge extraction, suggesting the suppression of nonradiative recombination. Furthermore, the superior quality of perovskite films obtained through the hot-antisolvent strategy significantly enhanced the power conversion efficiency (PCE) of hot-pressed semitransparent perovskite solar cells. The PCE remarkably increased from 0.13% to an impressive 12.65% while maintaining an average visible transmittance of 26.55% and exceptional air stability for 2000 hours with no significant degradation in initial PCE. This study achieves a record-breaking light utilization efficiency of 3.36% in the realm of research on hot-press processes.

Sequential Bayesian-optimized graphene synthesis by direct solar-thermal chemical vapor deposition

This work reports the use of a high-flux solar simulator that mimics the solar spectrum and a cold-wall CVD reactor to demonstrate the feasibility of utilizing a renewable energy resource in synthesizing graphene under various conditions. A parametric study of process parameters was conducted using a probabilistic approach. Gaussian process regression serves as a surrogate to establish a prior for Bayesian optimization, and an information acquisition function is employed to identify conditions that yield high-quality products. Backscattered electron images and Raman mapping were used to assess the effects of growth conditions on graphene characteristic sizes, film quality, and uniformity. We report the synthesis of high-quality single-layer graphene (SLG) and AB-stacked bilayer graphene films in a one-step, short-time process with ID/IG\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$I_{D}/I_{G}$$\\end{document} ratios of 0.21 and 0.14, respectively. Electron diffraction analysis shows peak intensities that resemble SLG and AB-bilayer graphene with up to 5 and 20 μ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\upmu }$$\\end{document}m grain sizes, respectively. The optical transmissivities of SLG and AB-bilayer graphene fall between 0.959–0.977 and 0.929–0.953, whereas the sheet resistances measured by a 4-point probe with 1 mm spacing are 15.5 ± 4.6 and 3.4 ± 1.5 kΩ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Omega$$\\end{document}/sq, respectively. Further scale-up of the optimized graphene growth area was achieved by flattening the insolation profile, leading to spatial uniformity up to 13 mm in radius. Direct solar capture for CVD synthesis enable a practical and sustainable option for synthesizing graphene films applicable for photonic and electronic applications.

Enhancing the quality of homoepitaxial (−201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium

This article innovatively uses pulsed metal-organic chemical vapor deposition technology to optimize the quality of β-Ga2O3 thin films on (−201) β-Ga2O3 homo-substrate using indium pulse-assisted technology. The results demonstrate that the pulsed indium-assisted method, when compared with the traditional indium-assisted method, effectively suppresses the desorption of Ga2O, enhances the flatness of the β-Ga2O3 film, and reduces the surface roughness from 34.8 to 0.98 nm. The optimized single crystalline β-Ga2O3 film was grown with pulsed-indium, and the full width at half maximum of x-ray diffraction rocking curve was 30.42 arc sec, smaller than that of the continuous indium β-Ga2O3 (56.1 arc sec). In combination with the x-ray photoelectron spectroscopy O1s split-peak fitting analysis, the relative content of oxygen vacancies in the film was significantly reduced by pulsed indium-assisted method. The Hall mobility of films assisted by pulsed-indium is approximately 14 times higher than that of films assisted by traditional indium. The pulsed indium technology provides an idea for homoepitaxial growth of high-quality β-Ga2O3 films.

Current Status and Future Prospects of Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) Thin Film Solar Cells Prepared via Electrochemical Deposition

AbstractThe fabrication of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) thin‐film solar cells using the electrochemical deposition (ED), which is valued for its industrial feasibility, offers a cost‐effective and environmentally friendly approach to the carbon‐free and clean energy production. However, the reported power conversion efficiency of approximately 10 % for electrodeposited CZTSSe thin‐film solar cells is lower compared to the alternative methods like sputtering and spin‐coating, which is mainly attributed to the phase inhomogeneity and the rough morphology generated during the ED process. Ensuring the microscopic and macroscopic uniformity of the electrodeposited films is crucial for the improvement of the film quality and the device performances. In this review, strategies to address these challenges including the intrinsic film control such as the deposition mode, pH, concentration of metal ions, and complexing agents, as well as the extrinsic approaches such as doping, substitution of metal elements, and the introduction of interfacial layers. In addition, the prospects for the electrochemically deposited CZTSSe solar cells were presented, focusing on the promising applications in tandem, flexible, and solar water‐splitting devices. Finally, this review will provide technical insights into the ED process for preparing CZTSSe solar cells, outlining a perspective for the future development of highly efficient CZTSSe thin film solar cells.

Interfacial Rivet to Fill Structural Defects: A Spacer Engineering Gift for 3D Solar Cells.

The combination of 2D and 3D perovskites to passivate surfaces or interfaces with a high concentration of defects shows great promise for improving the efficiency of perovskite solar cells (PSCs). Constructing high-quality perovskite film systems by precisely modulating 2D perovskites with good morphologies and growth sites on 3D perovskite films remains a formidable challenge due to the complexity of spacer-engineered surface reactions. In this study, phase-pure 2D (HA)2(MA)n-1PbnI3n+1 perovskites with a controlled number of layers (n) are separated on a large scale and exploited as interface rivets to optimize 3D perovskite films, resulting in tunable film structural defects and grain boundaries. The optimized PSCs system benefits from a reduction in non-radiative recombination, resulting in improved optical performance, higher mobility, and lower trap density. The corresponding device achieves a champion power conversion efficiency (PCE) of more than 25%, especially for voltage (VOC) and fill factor (FF). The quality and uniformity of the perovskite films are further confirmed using large-area devices with an active area of 14 cm2, which exhibits a PCE of more than 21.24%. The high-quality thin-film system based on the 2D perovskites presented herein provides a new perspective for improving the efficiency and stability of PSCs.

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

MBE of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, X-ray diffraction, and scanning probe microscopy. The direct heteroepitaxial growth of InSb on GaAs(111)A results in a cracked morphology with flat terraces and deep gaps, which could be attributed to the extremely large lattice mismatch between InSb and GaAs (14.6%). When thin (5–30 monolayer thickness) InAs films are used as interlayers, more continuous and flat InSb films are obtained. The proposed growth technique using (111)A-oriented GaAs substrates and thin InAs interlayers are effective in improving the surface morphology and the structural quality of InSb films in highly lattice-mismatched systems.

Scaled Production of Functionally Gradient Thin Films Using Slot Die Coating on a Roll-to-Roll System.

Polymer thin films with a cross-web gradient structure is a burgeoning area of research, having received more attention in the last two decades, for improvements in the performance and material properties. Such patterned films have been fabricated using several techniques, but in practice these techniques are non-scalable, material-dependent, wasteful, and not highly efficient. Slot die coating, a well-known scalable manufacturing process, is used to fabricate gradient polymer thin films which will be investigated herein. By incorporating slot die with the custom roll-to-roll imaging system, gradient thin films are successfully fabricated by forcing two fluidic materials into the slot die simultaneously and by manipulating the viscous, diffusive, and inertial forces. The materials will be allowed to intermix, with the aim of having approximately a 50% mix along the centerline of any two contiguous stripes. Moreover, several characterizations such as FTIR, UV-vis spectroscopy, and SEM are performed to assess the quality of the gradient polymer thin films. The gradient structure fabricated using functional and nonfunctional materials has successfully improved the functional properties compared to fully blended two materials. This work will provide an understanding of the mechanisms to obtain gradient polymer thin-film structures that exhibit the desired geometric structure and performance.

Buried Interface‐The Key Issues for High Performance Inverted Perovskite Solar Cells

AbstractInterface engineering is known for effectively improving interfacial contact and passivating defects to enhance device performance of inverted perovskite solar cells (PSCs). Currently, most of works focus on surface passivation, while the buried interface is equally important. The film quality of perovskite layer greatly relies on the buried interface, leaving a pronounced impact on overall device performance. In addition, resolving defects and energy level mismatch at buried interface remains challenging. Optimizing the buried interface becomes a promising approach for high‐efficiency inverted PSCs. This review summarizes recent advances in buried interface engineering and emphasize the importance of corresponding characterization techniques. The various functions of buried interface engineering are carefully discussed, including crystallization modulation, defect passivation, energy level alignment, chemical reaction inhibition, chemical bridge, dipole cancellation and novel buried interfacial techniques. Finally, current challenges and prospects are put forward that should be addressed to further improve device performance of inverted PSCs.

Universal Strategy with Structural and Chemical Crosslinking Interface for Efficient and Stable Perovskite Solar Cells

AbstractDue to the limited interface contact and weak interfacial interaction, planar heterojunction perovskite solar cells (PSCs) have space for further improvement. Herein, a structural and chemical crosslinking interface is proposed and constructed by introducing an extra layer, which blends tin dioxide (SnO2) nanoparticles with chloride salts. Since the incorporated materials can be dissolved during the fabrication of perovskite, the quality of perovskite films is improved, leading to larger grain size and reduced trap‐state density. Also, more chloride ions at the SnO2/perovskite interface are observed and the interaction between Cl− and Sn4+ is confirmed. It results in more pronounced n‐type SnO2 with better conductivity and deeper conduction bands, leading to preferable energy level alignment between SnO2 and perovskite. Consequently, the open‐circuit voltage and fill factor of the devices increase, and target cells present better stability, retaining 98% of initial efficiencies after &gt;10 000 h storage in dry air (≈5% relative humidity) and maintaining 85.50% of the initial efficiency after 1000 h of operation under light. This strategy enables the achievement of 25.28% efficiency with a low bandgap (1.53 eV) perovskite composition, and it is confirmed to be universal when other related materials are utilized.

Dimethylamine oxalate manipulating CsPbI3 perovskite film crystallization process for high efficiency carbon electrode based perovskite solar cells

Crystallization process determines the quality of perovskite films and the performances of resultant perovskite solar cells (PSCs). Dimethylamine oxalate has been proven as a multifunctional modulator, and is explored as an efficient additive in manipulating the crystallization process of CsPbI3 perovskite films. On one hand, oxalate serves as the precipitator that facilitates the nucleation process of intermediate. The larger size of intermediate is conductive to the larger size and smaller grain boundaries of resultant perovskite. On the other hand, in subsequent annealing process, the phase conversion and growth process of transient perovskite can be decelerated due to the strong interactions of oxalate with both dimethylamine cation (DMA+) and Pb2+. Due to the optimized crystallization kinetics, the morphology and quality of CsPbI3 perovskite films are comprehensively improved with lower defect concentrations, and charge recombination loss is effectively suppressed. Benefiting from the optimized crystal quality of perovskite films, the carbon electrode-based CsPbI3 PSCs exhibit a champion efficiency of 18.48%. This represents one of the highest levels among all hole transport layer-free inorganic perovskite solar cells.

Assessment of Radiographic Film Quality in Some Selected Hospitals in Benue State

The essence of diagnostic radiology is to obtain a high quality image with low radiation dose to patient. Since radiology is aimed in producing images which provide adequate information for the clinical purpose with minimum radiation dose to the patient, we seek to assess the high image qualities that are produced in the darkroom. The processing time and the temperature, at which these films were processed, stored and also evaluated, were carried out in the darkroom. Agfa films were used throughout the procedure in four different hospitals, H-1, H-2, H-3 and H-4 and the processing chemicals were observed for the period of a month. Therefore, in H-1, the average temperature was found to be 29oC, average temperature was 26oC in H-2; in H-3, average temperature was 30oC and the average temperature in H-4 was found to be 29oC which all fall above the standard temperature limit (25oC) as recommended by National Council on Radiation Protection (NCRP). From the experimental proceedings in the darkroom, the distance from safelight to workbench, it shows that H-1 and H-2 do not conform to the standard while H-3 and H-4 are in conformity. The result obtained from darkroom fog test shows that, the Optical Density Difference (ODD) for H-1, H-2, H-3 and H-4 was found to be 0.16, 0.07, 0.18 and 0.35 respectively, which were all found to be above the ICRP standard limit (0.05). This implies that, most hospitals in Makurdi operates below the set darkroom practices as recommended by NCRP and ICRP which affects the quality of image as a result of high temperature, poor concentration in processing chemicals and some effect of fogging in the darkroom which needs to be checked.

Anchoring Charge Selective Self-Assembled Monolayers for Tin-Lead Perovskite Solar Cells.

Self-assembled monolayers (SAMs) have displayed great potential for improving efficiency and stability in p-i-n perovskite solar cells (PSCs). The anchoring of SAMs at the conductiv metal oxide substrates and their interaction with perovskite materials must be rationally tailored to ensure efficient charge carrier extraction and improved quality of the perovskite films. Herein, SAMs molecules with different anchoring groups and spacers to control the interaction with perovskite in the p-i-n mixed Sn-Pb PSCs are selected. It is found that the monolayer with the carboxylate group exhibits appropriate interaction and has a more favorable orientation and arrangement than that of the phosphate group. This results in reduced nonradiative recombination and enhanced crystallinity. In addition, the short chain length leads to an improved energy level alignment of SAMs with perovskite, improving hole extraction. As a result, the narrow bandgap (≈1.25eV) Sn-Pb PSCs show efficiencies of up to 23.1% with an open-circuit voltage of up to 0.89V. Unencapsulated devices retain 93% of their initial efficiency after storage in N2 atmosphere for over 2500 h. Overall, this work highlights the underexplored potential of SAMs for perovskite photovoltaics and provides essential findings on the influence of their structural modification.