Abstract
MBE of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, X-ray diffraction, and scanning probe microscopy. The direct heteroepitaxial growth of InSb on GaAs(111)A results in a cracked morphology with flat terraces and deep gaps, which could be attributed to the extremely large lattice mismatch between InSb and GaAs (14.6%). When thin (5–30 monolayer thickness) InAs films are used as interlayers, more continuous and flat InSb films are obtained. The proposed growth technique using (111)A-oriented GaAs substrates and thin InAs interlayers are effective in improving the surface morphology and the structural quality of InSb films in highly lattice-mismatched systems.
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