Abstract
A calculation and experimental investigation of the temperature distribution in thin films deposited by the electrical explosion method were made. It was shown that as a result of releasing the condensation energy crystallization processes occur from the melt. Films of InSb and InAs deposited on isolated non-orientated substrates were investigated by electron diffraction and their mobility, carrier concentration and conductivity were measured. The unusually small values of mobility are discussed in terms of the dimensional effect in very thin films.
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