Film Deposition Research Articles

Fabrication of bare and cobalt-doped ZnFe2O4 thin film as NH3 gas sensor with enhanced response through UV-light illumination

This work reports on the deposition of bare and cobalt-doped ZnFe2O4 thin films by chemical spray pyrolysis technique to study ammonia (NH3) gas sensing properties. Colorless and strongly smelling, ammonia (NH3) is readily soluble in water and yields ammonium (NH) ions. These gases mix in the air atmosphere cause climate change, and severely affect human health. Therefore, the detection of NH3 below the exposure limit can avoid the deterioration of human health and environment. Co-doping had a significant effect on surface roughness, surface morphology, crystallite size, and sensitivity at room temperature. Co0.5Zn0.5Fe2O4 film (ZFCO5) exhibited an outstanding response (S = 19) towards 10 ppm NH3 gas at room temperature. Compared to the bare film, the ZFCO5 sensor has an eleven-fold higher gas-detection response value for 10 ppm NH3. This is ascribed to the blended effects of small crystallite size, high surface roughness, oxygen vacancies, and angular shape morphology linked into tiny rods in the ZFCO5 film. The ZFCO5 sensor showed a significant speedup in response/recovery times (102 s/34 s) and good response (S = 25) to NH3 under the UV-light (365 nm) illumination at room temperature. The built-in ZFCO5 gas sensor shows promise for real-time NH3 below threshold level monitoring.

Exploring slip flow of viscoelastic fluid with frictional heating effects: Uncertainty analysis using response surface methodology (RSM)

Viscoelastic fluid flow along a slippery plate finds applications in different fields such as examining friction and wear characteristics of bearing surfaces using viscoelastic lubricants, extrusion, coating and moulding processes, thin film deposition among others. The present article explores boundary layer flow generated by a slippery stretching plate in a viscoelastic fluid and conducts uncertainty analysis of the governing model via response surface methodology. In addition, the analysis includes viscous dissipation mechanism that represents the conversion of mechanical energy into heat induced by viscosity. The inclusion of the wall slip condition results in a non-linear Robin-type condition for the velocity field. A dependable and user-friendly built-in package “bvp4c” of MATLAB is used to provide the computational results. The solution is used to illustrate the implication wall slip phenomenon on the resisting wall shear. One noteworthy finding is that the inclusion of either the frictional heating effect or the elasticity results in a significant decrease in the surface cooling rate. As the contribution of the heat source term grows, the rate of surface cooling decreases. Strengthening the heat sink effect reverses this result. Contour plots for stream function and isotherms are generated and compared in Newtonian and second grade fluid cases.

The development of low-cost spin coater with wireless IoT control for thin film deposition

A low-cost spin coater with a wireless remote system that can deposit thin films of uniform thickness and quality at a significantly lower cost than traditional methods. The system consists of three main parts, a motorized spindle, a spin-coating head, and a control system connected to the network. The mechanical design on the mechanical part, spin coater system design with ESP32, and implementation of wireless control through visual basic. The network-enabled control system allows for real-time monitoring and adjustment of the deposition process, which can improve efficiency and reproducibility. This low-cost spin coating system represents a promising solution for organizations seeking to access thin film deposition technology at a fraction of the cost of traditional systems. By integrating wireless IoT control into low-cost spin coaters, the impact of this technology on coating uniformity will provide valuable insights for future advancements in this field.

Effects ofAs8structure formation on the surface morphology and internal microstructure of GaAs thin films.

Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to formAs8clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using 'defect analysis technology' and 'diamond structure identification' in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number ofAs8clusters decreases and film density increases. Increasing incident velocity increases the irregular movement ofAs8clusters in air, and their deposition on the film surface affects the morphology of the film, and the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number ofAs8clusters in the film decreases or the As8clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

Microwave-Assisted Hydrothermal Synthesis of Hydroxyapatite Flakes as Substrates for Titanium Dioxide Film Deposition

This article describes the synthesis of hydroxyapatite (HAp) flakes through a microwave-assisted hydrothermal method. These flakes suggest possible applications as a substrate for depositing titanium dioxide (TiO2) films using chemical vapor deposition with metal–organic precursors (MOCVD). The results reveal the formation of crystalline hydroxyapatite characterized by a uniform morphology. Additionally, we demonstrated the successful deposition of TiO2 coatings on the hydroxyapatite flakes, resulting in a distinctive faceted prism morphology. Our findings affirm the effective synthesis of the HAp/TiO2 composite material. To further explore the material’s practical applications, we recommend assessing the photocatalytic activity of these composite membranes in future research.

Equipment-Free Fabrication of Thiolated Reduced Graphene Oxide Langmuir–Blodgett Films: A Novel Approach for Versatile Surface Engineering

This research presents a novel method for the fabrication of mercapto reduced graphene oxide (m-RGO) Langmuir–Blodgett (LB) films without the need for specialized equipment. The conventional LB technique offers precise control over the deposition of thin films onto solid substrates, but its reliance on sophisticated instrumentation limits its accessibility. In this study, we demonstrate a simplified approach that circumvents the necessity for such equipment, thereby democratizing the production of m-RGO LB films. Thiolation of reduced graphene oxide (rGO) imparts enhanced stability and functionality to the resulting films, rendering them suitable for a wide range of applications in surface engineering, sensing, and catalysis. The fabricated m-RGO LB films exhibit favorable morphological, structural, and surface properties, as characterized by various analytical techniques including scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier-transform infrared spectroscopy (FTIR). Furthermore, the performance of the m-RGO LB films is evaluated in terms of their surface wettability, electrochemical behavior, and chemical reactivity. The equipment-free fabrication approach presented herein offers a cost-effective and scalable route for the production of functionalized graphene-based thin films, thus broadening the scope for their utilization in diverse technological applications.

A Comprehensive Study on Structural and Optical Properties of Zinc Selenide/Poly Ortho-methoxyaniline Hybrid Thin Films Deposited by Chemical Bath Deposition and Plasma Polymerization Techniques

Hybrid thin films hold dominant importance in various technological applications due to their synergistic effects between inorganic and organic materials. In this study, inorganic–organic hybrid thin film has been produced where the inorganic layer of zinc selenide (ZnSe) is deposited first through chemical bath deposition technique and the organic layer is deposited onto the inorganic layer using a capacitively coupled plasma polymerization technique. The ZnSe layer deposited for one hour has been used as the base layer and plasma polymerized (PP) o-methoxyaniline (OMA) has been deposited for different deposition durations. The experimental results showed that thickness of the the hybrid films increases with the organic layer deposition time. The field emission scanning electron microscope exhibited a large number of pores on the surface of the ZnSe film, which are significantly covered up when organic PPOMA is deposited onto it. The energy-dispersive X-ray confirms the constitutional elements of the hybrid films and X-ray diffraction study indicates the enhancement of crystallinity of the film. Differential scanning calorimetry and thermogravimetric analysis specify that hybrid films are thermally more stable (up to 396 °C) compared to pure ZnSe film (351 °C), probably due to higher conjugation in the PP organic layer. The direct optical band gaps of the deposited hybrid thin films are found to increase from 2.4 to 2.80 eV with the increase of organic layer onto ZnSe film. Consequently, the Urbach energy decreases from 0.94 to 0.66 eV with the deposition of hybrid film for different time durations. The outcomes of this study suggest that the hybrid films would have enormous potential as passive thin films for photovoltaic cells, sensing and optical devices.

Spatial atomic layer deposition of nitrogen-doped alumina thin films for high-performance perovskite solar cell encapsulation

An atmospheric-pressure spatial atomic layer deposition (AP-SALD) system is used to deposit nitrogen-doped alumina (N-AlOx) thin-film-encapsulation layers. The rapid nature of the AP-SALD process facilitates deposition of 60-nm layers directly on perovskite solar cells at 130 °C with no damage to the temperature-sensitive perovskite and organic materials. Varying the bubbling of a NH4OH precursor varied the nitrogen concentration from 0.08 to 0.68 at%. These small concentrations were found to have a significant impact on the structural properties of the films and their moisture barrier performance. The N-AlOx thin films had slightly higher growth rates than undoped AlOx, less unwanted hydroxyl and carbon content, and were smoother and more compact, which was attributed to a higher flux of reactive species from the volatile NH4OH. Optical calcium tests showed that the N-AlOx films had lower water-vapor-transmission rates (∼10-5 g/m2/day) than undoped AlOx films and the transmission was minimized for 0.28% nitrogen. The increased compactness of the N-AlOx films is expected to minimize nanoscale percolation pathways, whereas higher nitrogen-defect concentrations may facilitate water permeation through these pathways. The stability of n-i-p and p-i-n perovskite solar cells under standard ISOS-D-1 and ISOS-D-3 testing conditions was significantly enhanced by the encapsulation layers. An N-AlOx encapsulation layer with 0.28% nitrogen improved the T80 value of a p-i-n formamidinium methylammonium lead iodide solar cell from 144 hrs to 855 hrs (ISOS-D-1) and 52 hrs to 300 hrs (ISOS-D-3).

Applications of low-valent compounds with heavy group-14 elements.

Over the last two decades, the low-valent compounds of group-14 elements have received significant attention in several fields of chemistry owing to their unique electronic properties. The low-valent group-14 species include tetrylenes, tetryliumylidene, tetrylones, dimetallenes and dimetallynes. These low-valent group-14 species have shown applications in various areas such as organic transformations (hydroboration, cyanosilylation, N-functionalisation of amines, and hydroamination), small molecule activation (e.g. P4, As4, CO2, CO, H2, alkene, and alkyne) and materials. This review presents an in-depth discussion on low-valent group-14 species-catalyzed reactions, including polymerization of rac-lactide, L-lactide, DL-lactide, and caprolactone, followed by their photophysical properties (phosphorescence and fluorescence), thin film deposition (atomic layer deposition and vapor phase deposition), and medicinal applications. This review concisely summarizes current developments of low-valent heavier group-14 compounds, covering synthetic methodologies, structural aspects, and their applications in various fields of chemistry. Finally, their opportunities and challenges are examined and emphasized.

Optimizing the Thickness Uniformity of Magnetron Sputtering Deposited Films on a Large-Scale Curved Workpiece Surface

This study prepared magnetron-sputtering deposition film on a large-scale curved workpiece with a favorable thickness uniformity using a rectangular target cathode. For a substrate rotation structure with eccentric rotation/revolution composite motion, the geometrical model of the thickness distribution of the coating film on a large substrate was established in combination with the principle of rectangular cathode magnetron sputtering. The integral formula of the film thickness was derived, and various film thickness distribution patterns under different parameters were simulated. According to the present research results, the film thickness distribution can be optimized by adjusting the revolution-to-rotation radius and eccentric ratios. At an eccentric distance of 400 mm and a radius ratio of 2.78, the most favorable uniformity degree of 0.87 was obtained, which was controlled by the motion path of the fixed point on the substrate. The proposed approach helps to obtain large-scale films with favorable uniformity on the substrate.

Enhancing Structural Integrity, Optical Properties, and Room Temperature Formaldehyde Sensing Through Optimized Spray Deposition Rates

This study explores the impact of deposition rate on the properties of TiO2 thin films produced via spray pyrolysis, focusing on their application in gas sensors. The analysis covers structural, morphological, optical, and gas sensing characteristics of TiO2 films deposited at rates between 1 and 2.5 ml min−1. Studies show optimizing TiO2 film deposition rates at 2 ml min−1 significantly enhances formaldehyde detection, improving selectivity and achieving a rapid response of 7.52 at 20 ppm concentration. This study underscores the pivotal role of deposition rate optimization in augmenting the gas-sensing efficacy of TiO2 films, particularly for formaldehyde detection at ambient conditions. Optimal deposition rates are instrumental in enhancing sensor performance. The synergistic application of XRD and Raman spectroscopy unequivocally confirmed the presence of the TiO2 anatase phase, which is of paramount significance in gas sensing applications. FESEM furnished high-resolution insights into the surface morphology, revealing a spherical architecture. Furthermore, UV–vis spectroscopy was employed to assess the optical band gap of the films, which exhibited a decrement correlating with the rate of deposition. Notably, a deposition rate of 2 ml min−1 markedly improved the TiO2 films’ sensing performance. These insights are critical for developing cost-effective, high-performance gas sensors for cutting-edge applications.

Remote plasma chemical vapor deposition of silicon oxycarbide film with a styrene-containing precursor and in situ O2 plasma treatment

In this paper, a study was conducted on silicon oxycarbide thin-film deposition using remote plasma chemical vapor deposition. A di-methyldimethoxysilane)2styrene (MDMS)2styrene precursor and CH4 plasma were used in the deposition process, and in situ oxygen plasma treatment was performed to control the carbon content and properties of the thin film. During the deposition process, the thin-film growth rate was found to be almost constant regardless of in situ plasma treatment. This means that in situ oxygen plasma treatment had no significant effect on thin-film growth itself. Auger electron spectroscopy analysis revealed that the carbon content of the deposited thin film was 43 % when only deposition was performed, but could be lowered to 3 % by in situ oxygen plasma treatment, which demonstrated that the carbon content can be controlled in a relatively wide range. X-ray photoelectron spectroscopy showed that it was possible to preserve SiC bonds even as the oxygen content increased with the number of in situ plasma treatments. The refractive index increased from 1.33 to 1.49, indicating a decrease in the number of pores and an increase in density. Meanwhile, the dielectric constant increased with the oxygen content, but did not exceed 3.9 due to the SiC bond structure. As the pore size decreased, the leakage current tended to decrease to 9.51 × 10−9 A/cm2 in an electric field of 1 MV/cm, and the breakdown voltage increased. Finally, it was possible to improve the etching characteristic through plasma treatment by lowering the wet etch rate from 78 to 19 Å/min.

Manufacturing of TiO2, Al2O3 and Y2O3 Ceramic Nanotubes for Application as Electrodes for Printable Electrochemical Sensors

Manufacturing of TiO2, Al2O3 and Y2O3 Ceramic Nanotubes for Application as Electrodes for Printable Electrochemical Sensors

Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures.

The widely studied class of two-dimensional (2D) materialsknown as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.

Low-temperature deposition of β-Ga2O3 thin films employing in situ pulsed laser-assisted RF sputtering system

Monoclinic β-phase Ga2O3, the most thermodynamically stable phase, is an interesting material for power electronics applications. In this study, we present an efficient approach, diverging from existing methods, for the successful deposition of β-Ga2O3 thin films at low substrate temperatures without any post-annealing. Instead of relying on high substrate temperatures, we supplied sufficient thermal energy to the substrate by directly irradiating it with a 1064 nm ytterbium pulsed laser during RF sputtering. This eliminated the need for post-annealing and significantly reduced processing time. It also allowed for excellent control over the crystal structure and crystallinity formation of the thin films by providing excellent particle energy through heat transfer on the surface. The X-ray diffraction (XRD) scan of the sample deposited by irradiating a pulse laser to the substrate shows only three peaks corresponding to (−201), (−402) and (−603) of β-Ga2O3, indicating superior crystalline quality. The sample deposited at 2.5 mTorr working pressure maintained a thin film thickness of 207 nm and a grain size of 40.07 nm, and the energy band gap of the thin films was measured in the range of 4.45–4.64 eV. XPS, Auger, and PL optical analysis observed characteristic core-level peaks of β-Ga2O3 and the suppression of oxygen vacancies due to the high binding energy. The oxygen content increased by 4.39 %, resulting in the O/Ga ratio rising to 1.19, which leads to a positive shift in the O 1s binding energy. Consequently, we demonstrated the induction of phase transition of Ga2O3 into a stable β phase by introducing an in-situ pulse laser process during low temperature RF sputtering. These results have significant potential in various applications and are expected to contribute significantly to technological advancements.

Enhanced wettability of gallium-based liquid metal alloys on copper films by promoting intermetallic reactions

Gallium-based liquid metal alloys (LMs) have promising prospects as circuit components for flexible electronics, while, their high surface tension is now challenging for wetting of LMs on polymer surfaces and further patterning. In this study, we prepared functional Cu thin films on PDMS to enhance wettability of EGaIn liquid metal, using metal reaction-enhanced wetting. By adjusting the deposition pressure for Cu film deposition and introducing silicon-bound PDMS, both surface characteristics and microstructures of the Cu films change greatly. The corresponding contact angle of EGaIn can be tuned from 19° to 79.5°. The folded texture of the Cu film surface reduces the actual contact area, leading to an increase in the contact angle. The higher I(111)/I(200) ratio in the Cu films improves the surface wettability, probably due to the fact that the (111)-phase orientation promotes the formation of CuGa2 reaction products. This tunable wettability of LMs is expected to improve the performance of flexible electronic devices.

Enhancement of hole mobility in high-rate reactively sputtered Cu2O thin films induced by laser thermal annealing

In presented work, a reactive high-power impulse magnetron sputtering (r-HiPIMS) was used for high-rate deposition (≈ 170 nm/min) of Cu2O films. Films were deposited on a standard soda-lime glass (SLG) substrate at a temperature of 190 °C. As-deposited films exhibit poor hole mobility in the orders of ≈ 1 cm2/Vs. We have systematically studied the effect of laser thermal annealing (LTA) procedure performed using high-power infrared laser under different laser parameters (number of pulses, length of the pulse). We have found, LTA procedure could significantly enhance the hole mobility (up to 24 cm2/Vs in our case). We have also fitted the results of a temperature-dependent Hall measurement to clarify the mechanism of the reported increase in hole mobility. Moreover, we have discussed the effect of the LTA procedure on microstructure (crystallinity, surface morphology) and on the value of optical band gap.

Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm

Despite SrTiO3(STO) possessing a high dielectric constant, its application as a capacitor dielectric in dynamic random-access memory(DRAM) capacitors faces challenges due to the high-temperature annealing for crystallization, its compositional inhomogeneity, and the high leakage currents of STO films. To address these issues, we employ atomic layer deposition(ALD) of STO films onto Pt substrates at elevated temperatures(340–380 °C). The use of low-reactivity Pt electrodes effectively mitigates the initial growth of excess Sr, ensuring enhanced compositional uniformity along the film growth direction. Coupled with ALD at high temperatures, this approach facilitates the crystallization of STO films in the as-grown state, further enhancing the crystallinity with increasing film thickness. Subsequent low-temperature post-deposition annealing (PDA) at 400 and 500 °C achieves full crystallization. This process results in a remarkable increase in the dielectric constant, reaching approximately 150. Furthermore, the absence of microcracks after PDA, attributed to the formation of adequately dense films, contributes to substantially improved dielectric properties. Consequently, these STO films exhibit an exceptionally low equivalent oxide thickness of 0.34 nm coupled with an ultralow leakage current of 3.7 × 10−8 A/cm2 at an operation voltage of 0.8 V, promising for advancing DRAM capacitors. This study presents a pathway for the sustainable scaling of DRAMs, addressing challenges in ALD-grown STO films.

Optical properties of low-pressure DC Ar plasma torch with N2–SiH4–B2H6 gas mixture injection for Si–B–N thin film deposition

Si–B–N ceramic hard films were prepared by injecting N2+SiH4+B2H6 reaction gas into an argon DC arc plasma jet at reduced pressure. XPS, FT-IR, SEM, and microhardness tester were used to characterize the samples, and the optical properties of Ar discharge plasma jet with and without reaction gas injection were studied by a multichannel high-resolution spectroscopy and a wide spectral range spectroscopy. It is found that the deposited films are mainly composed of Si, B, N and O. The film surface presents a dense structure with hundred-nanometer-sized clusters, and the hardness of sample is greatly enhanced. When the reaction gas is injected into the plasma jet, the emission of excited atoms in the background plasma is greatly reduced, and the growth rate of Si–B–N film shows a significant downward trend as the reaction gas injection ring or substrate holder is moved away from the torch nozzle. A slight enhancement of background plasma emission is observed near the substrate surface with increasing the distance between gas injection ring and torch nozzle, which indicates that the suppression effect of the reactive gas injection on the background plasma emission and the activation efficiency of the reaction gas are weakened, thereby reducing the deposition rate.

Diamond-like carbon conversion surfaces for space applications

We present diamond-like carbon (DLC) conversion surfaces to detect particles with energy below 2 keV. Conversion surfaces have been widely applied in measurements of low-energy particles by instruments onboard planetary and heliophysics missions. Their effectiveness is characterized by the efficiency in changing the charge state of the incident particles while maintaining a narrow angular distribution for the reflected particles. DLC as a conversion surface coating material has high conversion efficiency. We developed a conversion surface production process that provides ultra-smooth and ultra-thin DLC conversion surfaces. The process includes substrate preparation through precision cleaning, plasma immersion ion deposition of the DLC film, and diagnostics of the film parameters. The latter includes the measurement of the coating thickness, surface roughness, and the conversion efficiency for ion beams with energy below 2 keV. The process we developed provides the DLC conversion surface coating of repeatable parameters with a mean surface roughness of 3.4 ± 0.2 Å and a mean film thickness of 46.7 ± 0.8 nm uniform across the sample area. Ion beam measurements showed a negative ion yield of 1%–2% for hydrogen atoms and 8%–15% for oxygen atoms with an angular scatter distribution of 10°–20° at full width of half maximum. These results agree with those of other conversion surface coatings in the literature. The DLC conversion surfaces presented here are implemented in the conversion surface subsystem of the Interstellar Mapping and Acceleration Probe (IMAP)-Lo instrument of the IMAP mission scheduled for launch in 2025.