Intrinsic doping and ageing of indium oxide thin films

Abstract

Indium oxide (In2O3) is one of the most used materials for the synthesis of transparent electronics devices and currently tin-doped indium oxide (ITO) dominates the field of Transparent Conductive Oxides for most applications, from ICT to photovoltaics. In this work we present a study on the responses of indium oxide upon the formation, and stabilization, of point defects induced with different methods. After the deposition of In2O3 thin films via RF magnetron sputtering, treatments such as Ion Implantation (I.I.), Ultraviolet (UV) irradiation and Sun exposure were employed to generate oxygen vacancies as intrinsic dopants. Both I.I. and UV irradiations significantly improved the electrical conductivity of films, increasing the carrier density by up to 3 orders of magnitude. Moreover, after I.I. also the crystalline quality of the films was enhanced.To monitor the stability of oxygen vacancies upon exposure to ambient atmosphere, the ageing of samples was followed and recorded for a couple of weeks, reporting a fast and strong degradation of electrical properties. As a facile strategy to counteract the sheet resistance increase, samples were encapsulated in an ultra-thin (≈10 nm) SiO2 layer deposited via sputtering. Irradiated and encapsulated films retained a much lower sheet resistance throughout the observation time, preserving the samples conductivity.