Suppression of crystallization process in Atomic Layer Deposited hafnium oxide films

Abstract

Research on the deposition process of atomic layer deposition (ALD) of hafnium oxide thin films is important because it enhances the performance of nonvolatile memory devices and optical coatings and contributes significantly to advancements within the semiconductor industry. In this study, the alternating deposition of tetrakis(dimethylamido) hafnium and cyclopentadienyl tris(dimethylamino) hafnium precursors was studied. Moreover, this method allows for modulation of the refractive index, surface morphology, preferred orientation and phases of the material. Theoretical calculations revealed that the two precursors selectively adsorb on different crystal planes during the ALD process, elucidating the mechanism behind their preferred orientations. This study reports a method for regulating the phase development of thin films. The crystallization of the hafnium oxide thin films was suppressed by controlling the conditions of deposition.