Effect of SiO2 Layer Thickness on SiO2/Si3N4 Multilayered Thin Films

Abstract

Silicon nitride (Si3N4) materials are widely used in the electronics, optoelectronics, and semiconductor industries, with Si3N4 thin films exhibiting high densities, high dielectric constants, good insulation performance, and good thermal and chemical stability. However, direct deposition of Si3N4 thin films on glass can result in considerable tensile stress and cracking. In this study, magnetron sputtering was used to deposit a Si3N4 thin film on glass, and a silicon dioxide (SiO2) thin film was introduced to reduce the Si3N4 binding force and stress. The effect of the SiO2 layer thickness on the SiO2/Si3N4 multilayered thin film was explored. The results indicated that the introduction of the SiO2 layer could improve the weak adhesion characteristics of Si3N4 thin films. Moreover, sputtering the SiO2 layer to 150 nm resulted in the highest hardness and transmittance of the SiO2/Si3N4 multilayered thin films. The findings of this study lay a solid foundation for the application of Si3N4 thin films on glass.