Abstract
Abstract In this study, ITO films were deposited on silicon and quartz substrates by magnetron sputtering technology in pure argon. Using EQP plasma diagnostic technology, we study the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incident on the substrate surface, with special attention to the production of high-energy negative oxygen ions, and elucidate the mechanism behind its production. At the same time, the structure and properties of ITO films were systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films. Combined with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide (TCO) thin films, it provides valuable physical understanding for the optimization of TCO thin film deposition process.
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