Understanding the dynamic properties of magnetic films with the thickness down to nanometer scale is of both fundamental interests, as well as of great importance for the development of spintronic devices. In this study, we report the emergence of anisotropic magnetization dynamics by exploring a quasi-two-dimensional single-crystalline Fe/GaAs(001) interface with varying Fe layer thicknesses ranging from 0.7 to 3.0 nm using ferromagnetic resonance (FMR) technique. Various linewidth contributions, including intrinsic isotropic Gilbert damping, extrinsic inhomogeneous broadening and anisotropic two-magnon scattering are considered for the accurate fitting. We analyze and discuss the different mechanisms of linewidth and its field orientation dependence. Especially we propose a phenomenological expression for the anisotropic two-magnon scattering linewidth consisting of two-fold and four-fold symmetry parameters, which achieves a better understanding of the mechanism of anisotropic two-magnon scattering linewidth in the single crystal ultrathin film. Our analytical methods and results not only provide an effective approach for spin dynamic study in spintronics, but also enrich the understanding of the mechanisms of magnetization relaxation in other ferromagnetic metal/semiconductor interface systems.
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