Hot carrier effect in Ferro-FinFET for variation in temperature, work function, and FE layer thickness

Abstract

Using 3D TCAD simulator, the hot carrier effects (HCEs) in terms of impact ionization rate and horizontal electric field are reported for Ferro-FinFET taking temperature, work function of gate (ɸM), and ferroelectric thickness (tFE) as parameters. It is observed, these parameters have significant impact on the HCEs of Ferro-FinFET. It is perceived from analysis that temperature, ɸM, and tFE have observable impact on DC characteristics and a hysteresis loop is formed between forward and reverse sweep. We have shown the impact of temperature, ɸM, and tFE on the subthreshold swing (SS) and the ION/IOFF of Ferro-FinFET.