Using trancient capacitance spectroscopy we determined energy levels and studied the annealing behaviour of defect states introduced by 1.5 MeV electron irradiation of float-zone and pulled boron-doped silicon at 80 K. We found that apart from a previously reported bistable defect attributed to the boron substitutional-vacancy pair, the carbon interstitial in the float-zone silicon and the level E v + 0.34 eV in the pulled silicon exhibit charge-dependent peak amplitudes. Additionally, we found that in pulled silicon the ( E v + 0.20 eV) defect level is not only due to the divacancies but also to another kind of contributor which shares it. Finally, some other levels are reported as well.