The study of the influence of deep level defects on GaAs epilayer electrophysical parameters with electron beam and photoelectron paramagnetic resonance methods

Abstract

AbstractDeep level point defects in the GaAs p+‐pˆ−nˆ structures, grown by liquid‐phase epitaxy, were investigated with electron‐beam methods (electron‐beam induced current and modulation method) and photo‐EPR. It was shown that during the growing process the donor AsGa antisite defects with levels ev + 0.52 eV and ec — 0,75 eV and acceptor defect with the level ev + 0.44 eV have appeared. The interconnection between the thickness of pˆ‐layer, the concentration of deep levels defects, diffusion length of the minority carriers in the p° and n°‐layers was found.