Abstract
Photoconductivity studies are performed on n-type CdTe irradiated with 1.5 MeV electrons. The annealing temperatures of the defects introduced by low temperature irradiation are determined: the ( E c − 0.6 eV) defects involving Cd vacancies recover at 200°K and the ( E v + 0.46 eV) defects associated. with Te vacancies at 77°K.
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