Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Abstract

ABSTRACTThe total dose effects of 1 MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100 krad to 100 Mrad. The different electrical characteristics such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (IB) and a decrease in hFE, gm and ICSat was observed after 1 MeV electron irradiation. The collector–base (C–B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1 MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C2) versus voltage shows that the effective carrier concentration and built-in voltage (Vbi) increase marginally upon 1 MeV electron irradiation. The results of 1 MeV electron irradiation were compared with 1 MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1 MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1 MeV proton-irradiated transistor. The 1 MeV proton, 1 MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters.