Encapsulation Layer Research Articles

Application of optical property-enhancement film to improve efficiency and suppress angle dependence of top-emitting organic light-emitting diodes

In this paper, we propose the application of an optical property-enhancement film that complements the angular dependence and total reflection of top-emitting organic light-emitting diodes (TEOLEDs). The optical property-enhancement film is composed of a porous pyramid arrangement applied on a thin-film encapsulation layer of TEOLEDs and is applied to distribute the transmitted light evenly. The results confirm that the change in the electroluminescence spectrum for each angle was effectively reduced because the TEOLEDs demonstrated uniform light distribution. In addition, reducing the total internal reflection in the film structure made it possible to improve the external quantum efficiency by approximately 35% and current efficiency by 38%.

Tuning Strong Metal–Support Interaction Kinetics on Pt-Loaded TiO2(110) by Choosing the Pressure: A Combined Ultrahigh Vacuum/Near-Ambient Pressure XPS Study

Pt catalyst particles on reducible oxide supports often change their activity significantly at elevated temperatures due to the strong metal-support interaction (SMSI), which induces the formation of an encapsulation layer around the noble metal particles. However, the impact of oxidizing and reducing treatments at elevated pressures on this encapsulation layer remains controversial, partly due to the 'pressure gap' between surface science studies and applied catalysis. In the present work, we employ synchrotron-based near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) to study the effect of O$_2$ and H$_2$ on the SMSI-state of well-defined Pt/TiO$_2$(110) catalysts at pressures of up to 0.1 Torr. By tuning the O$_2$ pressure, we can either selectively oxidize the TiO$_2$ support or both the support and the Pt particles. Catalyzed by metallic Pt, the encapsulating oxide overlayer grows rapidly in 1x10$^{-5}$ Torr O$_2$, but orders of magnitudes less effective at higher O$_2$ pressures, where Pt is in an oxidic state. While the oxidation/reduction of Pt particles is reversible, they remain embedded in the support once encapsulation has occurred.

Cold Laser Micro-Machining of PDMS as an Encapsulation Layer for Soft Implantable Neural Interface.

PDMS (polydimethylsiloxane) is an important soft biocompatible material, which has various applications such as an implantable neural interface, a microfluidic chip, a wearable brain–computer interface, etc. However, the selective removal of the PDMS encapsulation layer is still a big challenge due to its chemical inertness and soft mechanical properties. Here, we use an excimer laser as a cold micro-machining tool for the precise removal of the PDMS encapsulation layer which can expose the electrode sites in an implantable neural interface. This study investigated and optimized the effect of excimer laser cutting parameters on the electrochemical impedance of a neural electrode by using orthogonal experiment design. Electrochemical impedance at the representative frequencies is discussed, which helps to construct the equivalent circuit model. Furthermore, the parameters of the equivalent circuit model are fitted, which reveals details about the electrochemical property of neural electrode using PDMS as an encapsulation layer. Our experimental findings suggest the promising application of excimer lasers in the micro-machining of implantable neural interface.

Self‐Trapped Exciton States in Metal Halide Perovskites van der Waals Heterostructures

Self‐trapped excitons (STEs), proved to be the major source of white‐light emission in 2D metal halide perovskites (MHPs) van der Waals (vdW) heterostructures, have aroused intense interest in photovoltaic and photoelectric applications. Nevertheless, the intrinsic mechanisms of STEs in these vdW heterostructures are still ambiguous. Herein, the binding energy correction of a STE stemming from the exciton–phonon coupling in MHPs vdW heterostructures based on the Pollmann–Büttner model is studied. It is found that there are two types of STEs with and . The corresponding nuclear coordinate diagrams are given to explain the differences between them and why the STEs with are hard to be observed in experiments. The phase transition between two types of STEs can be achieved by regulating the structural parameters, such as the vertical distance between the encapsulation layers, the position of the monolayer MHP in the heterostructure as well as replacing the encapsulation materials. The theoretical results provide important insights into the analysis and modulation of STEs in 2D vdW heterostructures.

Bioheat Model of Spinal Column Heating During High-Density Spinal Cord Stimulation

IntroductionHigh-density (HD) spinal cord stimulation (SCS) delivers higher charge per time by increasing frequency and/or pulse duration, thus increasing stimulation energy. Previously, through phantom studies and computational modeling, we demonstrated that stimulation energy drives spinal tissue heating during kHz SCS. In this study, we predicted temperature increases in the spinal cord by HD SCS, the first step in considering the potential impact of heating on clinical outcomes. Materials and MethodsWe adapted a high-resolution computer-aided design–derived spinal cord model, both with and without a lead encapsulation layer, and applied bioheat transfer finite element method multiphysics to predict temperature increases during SCS. We simulated HD SCS using a commercial SCS lead (eight contacts) with clinically relevant intensities (voltage-controlled: 0.5–7 Vrms) and electrode configuration (proximal bipolar, distal bipolar, guarded tripolar [+−+], and guarded quadripolar [+−−+]). Results were compared with the conventional and 10-kHz SCS (current-controlled). ResultsHD SCS waveform energy (reflecting charge per second) governs joule heating in the spinal tissues, increasing temperature supralinearly with stimulation root mean square. Electrode configuration and tissue properties (an encapsulation layer) influence peak tissue temperature increase—but in a manner distinct for voltage-controlled (HD SCS) compared with current-controlled (conventional/10-kHz SCS) stimulation. Therefore, depending on conditions, HD SCS could produce heating greater than that of 10-kHz SCS. For example, with an encapsulation layer, using guarded tripolar configuration (500-Hz, 250-μs pulse width, 5-Vpeak HD SCS), the peak temperature increases were 0.36 °C at the spinal cord and 1.78 °C in the epidural space. ConclusionsAs a direct consequence of the higher charge, HD SCS increases tissue heating; voltage-controlled stimulation introduces special dependencies on electrode configuration and lead encapsulation (reflected in impedance). If validated with an in vivo measurement as a possible mechanism of action of SCS, bioheat models of HD SCS serve as tools for programming optimization.

PEDOT Composite with Ionic Liquid and Its Application to Deformable Electrochemical Transistors.

Organic electrochemical transistors (OECTs) have become popular due to their advantages of a lower operating voltage and higher transconductance compared with conventional silicon transistors. However, current OECT platform-based skin-inspired electronics applications are limited due to the lack of stretchability in poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Some meaningful structural design strategies to resolve this limitation, including rendering OECT to make it more stretchable, have been reported. However, these strategies require complicated fabrication processes and face challenges due to the low areal density of active devices because wavy interconnect parts account for a large area. Nevertheless, there have been only a few reports of fully deformable OECT having skin-like mechanical properties and deformability. In this study, we fabricated stretchable and conductivity-enhanced channel materials using a spray-coating method after a composite solution preparation by blending PEDOT:PSS with several ionic liquids. Among these, the PEDOT composite prepared using 1-butyl-3-methylimidazolium octyl sulfate exhibited a better maximum transconductance value (~0.3 mS) than the other ion composites. When this material was used for our deformable OECT platform using stretchable Au nanomembrane electrodes on an elastomer substrate and an encapsulation layer, our d-ECT showed a barely degraded resistance value between the source and drain during 1000 cycles of a 30% repeated strain. We expect that our d-ECT device will serve as a step toward the development of more precise and accurate biomedical healthcare monitoring systems.

Enhanced reliability of phosphor-converted white light-emitting diodes based on a laser-cured silicone encapsulant layer

The laser-induced heating method was implemented for the homogeneous curing process of silicone encapsulant layer in phosphor-converted white light-emitting diodes (pc-WLEDs). Using the curing process with infrared laser irradiation, we demonstrated that pc-WLEDs performed better in the highly accelerated temperature and humidity stress test (85 °C, 85 Rh%) and the sulfur exposure test than devices with convection oven curing. The results from FTIR spectra, dynamic mechanical analysis, and Brunauer-Emmett-Teller (BET) surface area analysis indicated that the enhanced reliability of the laser-cured device could be attributed to the lower permeation property of gas molecules inside the laser-cured encapsulant layer. In addition, the permeation mechanism in the encapsulant layer of pc-WLED was proposed based on the cross-linking density of a silicone polymer and the total pore volumes in the phosphor-mixed encapsulant layer.

Observation of intrinsic crystal phase in bare few-layer CrI3

Abstract Intrinsic structural phase is a crucial foundation for the fundamental physical properties, and for creating innovative devices with unprecedented performances and unique functionalities. Long-range ferromagnetic orders of van der Waals CrI3 are strongly tied with interlayer stacking orders. However, the intrinsic structure of few-layer CrI3 still remains elusive; the predicted monoclinic phase has not yet been experimentally detected in bare few-layer CrI3. Here we uncover the intrinsic structure of few-layer CrI3 with interlayer antiferromagnetic coupling, which unambiguously show monoclinic stacking in both bare and hBN-encapsulated bilayer and tri-five-layer CrI3 throughout an entire temperature range from 300 to 10 K. An exotic spring damping effect from hBN encapsulation layers is experimentally observed in hBN/CrI3/hBN heterostructures, which partly hinders interlayer sliding of CrI3. This work demonstrates the intrinsic monoclinic crystal phase of few-layer CrI3 and associated correlation with magnetic orders, opening up numerous opportunities for creating magnetic texture by stacking design.

Ultrasound-driven in vivo electrical stimulation based on biodegradable piezoelectric nanogenerators for enhancing and monitoring the nerve tissue repair

In vivo electrical stimulation (ES) has shown great promise in promoting tissue repair for various tissue engineering applications. However, a significant limitation of current long-term ES technique is that the existing postoperative protocols with transcutaneous leads have great risk of infection and need second operation to remove the tethered electrical-interface. Herein, we explored an ultrasound-driven in vivo ES technique based on the biodegradable piezoelectric nanogenerator (PENG) without any transcutaneous leads for the repair of peripheral nerve injuries. The piezoelectric nanogenerator contains biodegradable piezoelectric materials, including potassium sodium niobate (KNN) nanowires, poly (L-lactic acid) (PLLA), and poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV), biodegradable encapsulation layers, such as Poly (lactic acid) (PLA) or poly-ɛ-caprolactone (PCL) films, as well as biodegradable magnesium (Mg) electrodes and molybdenum (Mo) wires. Owing to the merits of ultrasound (US) in biomedical engineering, such as deep tissue penetration and predominant clinical security, US was selected as an exterior wireless energy source to drive the implantable nanogenerators which were fabricated with dissolvable piezoelectric films. With mechanical excitation remotely activated by programmable US pulses, the implanted piezoelectric nanogenerator can deliver adjustable ES to the biodegradable conductive conduits of peripheral nerves beyond the intraoperative period. Moreover, upon in-situ ES of the recovered nerves by the implanted nanogenerator, the nerve repairing process can be monitored in real-time with recorded muscle electrophysiology response. With a sciatic nerve injury model, our comprehensive investigation on neurologic function recovery analysis, histological assessment and microstructure analysis confirmed the great enhancement in nerve regeneration by the ultrasound-driven in vivo ES. This work provides a novel strategy with ultrasound-responsive biodegradable piezoelectric nanogenerator to deliver in vivo ES for tissue engineering applications.

Monolithic Integration of Perovskite Photoabsorbers with IGZO Thin‐Film Transistor Backplane for Phototransistor‐Based Image Sensor

AbstractMonolithic integration of perovskite materials and their optoelectronic devices with well‐developed thin‐film transistor (TFT) backplane is leading to new applications in displays and image sensors. Herein, a scalable polyimide assisted patterning approach for monolithic integration of perovskite based high‐sensitive phototransistor array on indium gallium zinc oxide (IGZO) active matrix backplane is introduced. Polyimide vias are first formed by conventional photolithography process, through which uniform perovskite films of arbitrary patterns with feature size less than 20 µm are fabricated by spin‐on‐patterning method. Using this technique, patterns of quasi 2D perovskite photoabsorbing layer are precisely deposited onto the channel area of the photosensing IGZO TFT, forming high‐performance phototransistors with responsivity and detectivity reaching 835.7 A W−1 and 5.4 × 1012 Jones, respectively. An image sensor with 8 × 8 pixels array containing both photosensing perovskite/IGZO transistors and switching IGZO transistors is demonstrated, in which the switching IGZO transistor elements on the backplane are protected by the non‐patterned region of the polyimide encapsulation layer. This whole fabrication process is compatible with TFT manufacturing process and will significantly reduce the cost needed for constructing next generation high‐resolution image sensors.

Strong Metal–Support Interaction in Heterogeneous Catalysts

AbstractStrong metal–support interaction (SMSI) in supported metal catalysts, typically accompanied by the formation of encapsulation layers over metal nanoparticles, has drawn intense research attention owing to a variety of intriguing behaviors. In particular, recent years have witnessed enormous progress in constructing SMSI between novel components as well as in understanding the nature of SMSI. Notably, SMSI also provides substantial possibilities for designing and modulating advanced heterogeneous catalysts toward a wide range of applications. Therefore, a systematic and critical overview is highly desirable to highlight the recent advances in SMSI and to discuss its applications in heterogeneous catalysts. In this review, the formation process of SMSI is described based on the typical material systems, and then the surface energy minimization mechanism is discussed by fully taking account of new material systems as well as novel construction strategies. Moreover, the principles of using SMSI to control the activity, selectivity, and stability of supported metal catalysts are demonstrated with an emphasis on thermocatalysis and electrocatalysis. To conclude, personal perspectives on the opportunities and challenges for SMSI are provided.

Superhydrophobic, Oleophobic, Self-Cleaning Flexible Wearable Temperature Sensing Device

We use a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/carbon nanotube (CNT) composite as the temperature sensing layer, and the device exhibited a high sensitivity of −2.46%/°C. A sandpaper-molded PDMS with fluorinated surface modification protection layer is used as the superhydrophobic, oleophobic, self-cleaning protective encapsulation layer. This device exhibits a self-cleaning function when it makes contact with liquids such as water, tea, coffee, and milk. In addition, the surface can also repel liquids with low surface tension (such as oil), exhibiting good oleophobicity. Resistance to ultrasonication in an organic solvent for 120 min and a 400-cycle tape peel test reveal durability of this device. The device functions under similar conditions after 1000 bending cycles with a bending radius of 0.875 mm. In this work, we demonstrate a simple and low-cost technique to fabricate durable and wearable temperature sensing devices.

Ultra-Flexible Organic Electronics for Biomedical Application

Since biometric sensing using light can noninvasively measure biological information from the outside of the body, various information can be obtained from dynamic things such as blood oxygen concentration and heart rate to static things such as fingerprints and veins. Among them, a flexible organic imager can be attracted to the body, so it is used as wearable electronics. Utilizing its flexibility, imagers capable of imaging fingerprints and veins, pulses that can be directly applied to the skin, blood oximeters, muscle contraction sensors, etc. have been reported.In this study, we have developed ultra-flexible and lightweight highly efficient, ultra-flexible, air-stable, three-color, polymer light-emitting diodes (PLEDs) The total thickness of the devices, including the substrate and encapsulation layer, is only three micrometers, which is one order of magnitude thinner than the epidermal layer of the human skin. Due to the very thin substrate and neutral position, our device shows the highly flexibility and conformability. The PLEDs are directly laminated on the surface of skin and are used as indicators/displays. And also, we have developed a sheet-type image sensor that enables high-resolution and high-speed reading. Our conformable imager has pixel pitches as small as 50 µm, with resolutions of up to 508 dpi. Using our conformable imager, we succeed to take a high-resolution image of fingerprints and veins used for biometric authentication.

Probing the Effects of Defects in Ultrathin Oxide Overlayers on the Selectivity of Encapsulated Electrocatalysts

Application of ultrathin oxide encapsulation layers on co-catalysts employed in z-scheme photocatalysis has the potential to increase overall efficiency through the prevention of undesirable back reactions and increased charge separation. [1,2] However, defects within the semipermeable oxide coatings – such as pinholes, cracks or particle protrusions – have been postulated to facilitate locally high rates of undesirable reactions by creating pathways for facile transport of undesired reactants to exposed active sites.[3] Local probe measurements, such as scanning electrochemical microscopy (SECM), can estimate the relative rates of production of product species generated from competing electrochemical reactions with high spatial resolution over the electrode. This can be leveraged to determine the influence of local defects on global performance metrics, such as the apparent permeability of the overlayer and selectivity of the electrode. In this presentation, we report the use of SECM to determine the influence of overlayer defects on the performance of a model silicon oxide (SiOx) -encapsulated Pt thin film electrocatalyst when operated under conditions where two competing reactions can occur. Motivated by Z-scheme photocatalysis, the hydrogen evolution reaction (HER) and Fe(III)/Fe(II) redox reaction were studied. After introducing new methodology to determine local selectivity towards HER using SECM tip current, the resulting selectivity maps are compared against defects seen in optical images, scanning electron micrographs, and atomic force microscopy images. This analysis reveals that that certain types of defects in the oxide overlayer can be responsible for a large percentage of the partial current density towards the undesired Fe(III) reduction reaction. Correcting for the defect contributions to the undesired reaction, it is determined that the true Fe(III) permeability values for the SiOx overlayers are almost two orders of magnitude lower than permeabilities determined from conventional analysis that ignored the presence of defects. Finally, different types of defects were studied revealing that the defect morphology can have varying influence on both the selectivity and calculated permeability. This work highlights the need for local measurements in addition to macroscopic measurements of oxide encapsulated catalysts as they are applied to more complex geometries such as particle photocatalysts.

Thermal Impact of Rear Insulation, Light Trapping, and Parasitic Absorption in Solar Modules

Reflection of sub-bandgap light has been argued to be the most effective path to lower temperature solar modules. This report compares GaAs modules with high sub-bandgap reflection to various Si modules under two experimental thermal configurations. At one sun, the GaAs modules operate ∼6 °C colder than both multicrystalline and monocrystalline Si within an open-rack configuration. This thermal advantage increases to ∼13 °C for the thermally insulated configuration. The experimental data are used to build a theoretical model, finding agreement with root-mean-square error between 1.4°C–2.8 °C. The model shows the main thermal advantage of these GaAs modules to be their high sub-bandgap reflection of 79%. Next, it is shown that the sub-bandgap reflection in modules with textured Si cells is fundamentally limited compared to values achieved by the planar GaAs modules, because of the amplification of parasitic absorption that occurs with light trapping. In Si modules, light trapping more than doubles the parasitic absorption of encapsulation layers, limiting the maximum sub-bandgap reflection to 63%. Higher values require thorough optimization of front, bulk, and rear layers, but could lower operating temperatures by up to 12 °C for insulated Si modules.

Efficient and reductive removal of bromate using a novel and stable nanoscale zero-valent iron embedded in N-doped carbon derived from metal-organic frameworks

Nanoscale zero-valent iron (nZVI) has drawn great interest in the remediation of contaminated waters. In this study, we prepared a novel and stable nZVI embedded in N-doped carbon matrix (nZVI@MOF-CN) using a facile direct carbonization method, in which an iron-containing metal-organic framework (MOF) served as both the iron and carbon sources, and melamine as the nitrogen source. The nZVI@MOF-CN composites were used in the removal of bromate in water, which could be effectively reduced by the surface electrons transferred from nZVI to the carbon encapsulation layer due to the Schottky-Mott effect. Doped nitrogen significantly facilitated the reduction of bromate by nZVI, because it enhanced the nZVI dispersion and bromate adsorption, and modulated the carbon matrix conductivity. The bromate reduction activity of nZVI@MOF-CN was more than 50 times higher that of its un-doped counterpart and a commercial nZVI. Moreover, owing to the protection of carbon encapsulation layer, nZVI@MOF-CN exhibited good stability and reusability. The leached concentration of iron ions of nZVI@MOF-CN was less than 5% of the commercial nZVI under the same reaction conditions. Commercial nZVI almost completely lost its bromate reduction activity after use (3% reduction efficiency in the examined time frame), while nZVI@MOF-CN maintained a reduction efficiency of 61%. The nZVI@MOF-CN could be effectively regenerated by hydrogenation reduction. After five reaction-regeneration cycles, nZVI@MOF-CN still achieved a bromate reduction efficiency of approximately 80%. These results suggest that MOF-derived nZVI materials are highly reactive and stable for the reductive removal of pollutants in water.

Hexagonal Boron Nitride on III-V Compounds: A Review of the Synthesis and Applications.

Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed.

Large-Area Hexagonal Boron Nitride Layers by Chemical Vapor Deposition: Growth and Applications for Substrates, Encapsulation, and Membranes

ConspectusHexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material because of its unique optical properties in the deep-UV region, mechanical robustness, thermal stability, and chemical inertness. Ultrathin hBN layers have gained significant scientific attention for various applications, including nanoelectronics, photonics, single photon emission, anticorrosion, and membranes. For example, the carrier mobility of graphene- and MoS2-based transistors can be improved by using an hBN encapsulation layer, which protects graphene or MoS2 from air and/or screens the charge trap site of a substrate. Moreover, deep-UV emitters and detectors have been developed on the basis of the large bandgap of hBN (∼6 eV), which exhibits a sharp absorption at approximately 200 nm. Additionally, oxidation of metal surfaces can be prevented by hBN encapsulation, and proton transport can be facilitated by hBN membranes with low gas permeability. Wafer-scale growth of hBN films is crucial to enable their industrial-scale applications. In this regard, chemical vapor deposition (CVD) is a promising method in which scalable high-quality films can be grown at reasonable cost. To date, considerable efforts have been made to develop continuous hBN thin films with high crystallinity, from those with large grains to single-crystal ones, and to realize thickness control of hBN films by CVD. However, the growth of wafer-scale high-crystallinity hBN films with precise thickness control has not been reported yet. The hBN growth is significantly affected by the substrate, in particular the type of metals, because the intrinsic solubilities of boron and nitrogen depend on the type of metal; moreover, control of the grain size and thickness of hBN is difficult. Although growth mechanisms for various substrates have been proposed using various control experiments, a precise growth mechanism has not yet been established through systematic studies. Thus, a deeper understanding of the CVD-based growth of hBN is critical.In this Account, state-of-the-art strategies adopted for growing wafer-scale, highly crystalline hBN are summarized, followed by the proposed mechanisms of hBN growth on catalytic substrates. Furthermore, various applications of the hBN thin films fabricated in our laboratory are demonstrated, including a dielectric layer, an encapsulation layer, a wrapping layer of gold nanoparticles for surface enhanced Raman scattering, a proton-exchange membrane, a template for growth of other 2D materials or nanomaterials, and a platform of fabricating in-plane heterostructures. Finally, the inherent challenges are summarized, and future research directions for the facile CVD-based growth of single-crystal hBN are proposed, including the development of a transfer method that is effective for various applications.

Designing outcoupling of light from nanostructured emitter in stratified medium with parasitic absorption

We demonstrate dipole-based modeling for designing nanostructured emitters in a stratified surrounding medium in the presence of parasitic absorption, while giving equivalent information about far-field emission as Lorentz reciprocity. We consider the challenging modeling case of a single nanowire with a parasitically absorbing planar top contact layer. The main advantage of our approach is the use of a near-field-to-far-field transformation (NFFT) adapted for stratified surrounding, which speeds up the simulations compared to approaches without such a NFFT. We show how the thickness of the contact layer, nanowire geometry, emitter position within the nanowire, refractive index of encapsulation layer, and orientation of the dipole moment of the emitter strongly affect the extraction of internally emitted photons.

59‐3: A Thin, Transparent Encapsulation Film with Excellent Gap‐filling Performance for Ultra‐High‐Resolution OLEDs via Vapor‐phase Deposited Polymeric Layer

A thin polymer film was developed by vapor‐phase deposition method, termed initiated chemical vapor deposition (iCVD) that can replace the inkjet process. The thin polymer film was integrated together with the PECVD SiNx layers to form a high performance thin film encapsulation (TFE) layer for ultra‐high resolution OLEDs, featured by excellent gap‐filling properties, full transparency in whole visible light region, and minimal shadow effect.