Abstract
The laser-induced heating method was implemented for the homogeneous curing process of silicone encapsulant layer in phosphor-converted white light-emitting diodes (pc-WLEDs). Using the curing process with infrared laser irradiation, we demonstrated that pc-WLEDs performed better in the highly accelerated temperature and humidity stress test (85 °C, 85 Rh%) and the sulfur exposure test than devices with convection oven curing. The results from FTIR spectra, dynamic mechanical analysis, and Brunauer-Emmett-Teller (BET) surface area analysis indicated that the enhanced reliability of the laser-cured device could be attributed to the lower permeation property of gas molecules inside the laser-cured encapsulant layer. In addition, the permeation mechanism in the encapsulant layer of pc-WLED was proposed based on the cross-linking density of a silicone polymer and the total pore volumes in the phosphor-mixed encapsulant layer.
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