Electrical Characteristics Of Devices Research Articles

Amorphous InZnSnO Thin-Film-Transistors Performance Enhancement with Low-Energy Xenon Pulsed-Light Annealing

The electrical characteristics and stability of amorphous indium-zinc-tin oxide (IZTO) thin-film transistors (TFTs) were significantly improved in this study using low-energy Xenon pulsed-light annealing (PLA). In comparison to conventional furnace annealing (FA), PLA treatment significantly reduced the processing temperature and annealing time. Besides, the defect states are obviously reduced from 1.73×1012 cm-2 to 6.53×1011 cm-2 by PLA treatment, resulting in improved device electrical characteristics and enhanced reliability, including improved carrier mobility from 20.08 to 39.61 cm2/V∙s, threshold voltage from 0.82 to 0.24 V, subthreshold swing (S.S.) from 0.54 to 0.24 V/decade, and the ON/OFF current ratio from 2.32×107 to 7.31×108. In addition, the enhanced stability is observed under both positive gate-bias stress (PGBS) of VGS = 30 V and negative gate-bias stress (NGBS) of VGS = –30 V for a stress duration of 3000 s. The threshold voltage shift (ΔVTH) is reduced from 8.31 V to 1.65 V and from –3.93 V to –1.51 V, respectively. This is the first time low-energy PLA was conducted for IZTO TFT performance improvement.

Artificial optoelectronic synapse based on CdSe nanobelt photosensitized MoS2 transistor with long retention time for neuromorphic application

Abstract Optoelectronic synaptic devices have been regarded as the key component in constructing neuromorphic computing systems. However, the optoelectronic synapses based on conventional 2D transistor are still suffering low photosensitivity and volatile retention behavior, which can affect the recognition accuracy and long-term memory. Here, a novel optoelectronic synaptic device based on surface-state-rich CdSe nanobelt photosensitized 2D MoS2 transistor is demonstrated. Benefiting from the excellent light absorption of CdSe and effective charge trapping at the hetero-interface, the device exhibits not only high photosensitivity but also long retention time (>1,500 s). In addition, typical synaptic functions including the excitatory postsynaptic current, paired-pulse facilitation, the transformation from short-term to long-term plasticity, the transformation from short-term to long-term plasticity, spike-amplitude-dependent plasticity, and learning-forgetting-relearning process are successfully simulated and modulated by light stimulation. Most importantly, an artificial neural network is simulated based on the optical potentiation and electrical habituation characteristics of the synaptic devices, with recognition accuracy rates of 89.2, 93.8, and 91.9 % for file type datasets, small digits, and large digits are achieved. This study demonstrates a simple and efficient way to fabricate highly photosensitive optoelectronic synapse for artificial neural networks by combining the merits of specific materials and device architecture.

The time evolution of electrical and thermodynamic characteristics of surface dielectric barrier discharge caused by dielectric degradation

Abstract The degradation of the dielectric layer is a common issue in dielectric barrier discharge (DBD). The performance of DBD devices may suffer from instability due to potential corrosion of the dielectric layer caused by discharge, which could even result in structural failure. To gain a comprehensive understanding of the degradation of DBD devices during discharge, the evolution of the performance of DBD devices with various dielectric materials over time is studied. Periodic patterns are found to form on the dielectric surface along the edge of the high-voltage electrode. The electrical data, emission spectra, and surface morphologies of DBD devices with three different dielectric materials, namely ceramics, glass, and PCB, are obtained during an eight-hour discharge. The electrical and thermodynamic characteristics of DBD devices with the three dielectric materials are found to initially decrease by about 20~40%. Subsequently, they remain stable in devices with ceramics and PCB dielectric layers but increase in devices with glass dielectric layers until the end. Surface morphologies reveal that periodic patterns consisting of metal accumulations, etching pits, and metal depositions form on the surfaces of ceramics, glass, and PCBs, respectively. Some organic compounds vaporize from the surface of PCBs. The deposition, etching, and vaporization could be reasons for changes in the electrical and thermodynamic characteristics. It shows that degradation occurs not only in organic dielectrics like polymers but also in inorganic dielectrics such as ceramics and glass. To enhance stability and prevent potential failures and overestimations, electrical and optical measurements could be utilized as diagnostic methods in applications involving DBD devices.


(Invited) Influence of the Semiconductor Thin Film Morphologies on Dntt Organic Electronic Devices Performances

Interest in organic semiconductors has grown enormously in the last few years, indeed their use in microelectronics is continuously rising up in a large range of fields, spanning from academic to industrial new applications [1]. They provide a large number of interesting properties that have pushed a gradual replacement of classical amorphous silicon-based devices with organic ones [2], as they promise to be the best candidates as drivers of the necessary green and digital transition and become the building blocks in a huge number of future applications.In most devices, particularly in OTFTs, the quality and properties of the interface between semiconductor and dielectric are of fundamental importance for the device electrical characteristics [3-4]. Dinaphtho [2,3-b:2′,3′-f] thieno [3,2-b] thiophene (DNTT)-based OTFTs are among the best-known devices as they provide good performances in terms of charge mobility, good stability as well as easy processing and they are particularly suitable to study deeper the role of insulator/semiconductor interface [5-6]. It has been widely reported that the best performances of the small molecule organic based transistors, in terms of charge mobility as well as stability, are obtained when the molecules align with their long axis almost perpendicular to the growth surface. The DNTT molecules deposited on SiO2, align to form a homogeneous film, which results to be highly crystalline and provides good transport properties. However, in DNTT-based OTFTs different insulator surfaces, above which the active layer is grown, can provide different properties in terms of morphology and surface energy so that the electrical performances of the resulted devices can span in a wide range [7].In this work, we have studied the growth of DNTT semiconductor thin films on two different dielectric materials relating the ordered DNTT thin film structure to the OTFTs' electrical characteristics. OTFTs have been fabricated with Bottom Gate Top Contact (BGTC) configuration using thermal SiO2 or a double layer of SiO2/CytopTM as gate dielectrics. Semiconductor thin films, with thicknesses ranging from 3 nm to 50 nm, were detailed analyzed with high resolution AFM and XRD measurements (Fig. 1a, b, c, d) for different growth conditions to understand the morphologies of the films starting by the very first ordered layers of DNTT semiconductors. Our measurements show that DNTT molecules on SiO2 and Cytop pack into ordered structures placing themselves with their long axis perpendicular to the plane of the substrate (edge-on). However, in the case of DNTT on SiO2, a portion of ordered molecules can lie horizontally on the substrate (face-on). This causes an increase of defective states for the majority carriers in the conductive channel of the transistor, with a consequent reduction of the field-effect mobility (Fig. 1a, b). Numerical simulations were performed to analyze the effects of different semiconductor film morphologies on the electrical characteristics of the OTFTs. We also show that the morphological semiconductor differences lead to better performances for organic phototransistors based on DNTT/Cytop interface [8].[1] C. Wang et al., Chemical reviews 2012, 112 (4), 2208-2267.[2] Y. Bonnassieux et al., Flexible and Printed Electronics 2021, 6 (2), 023001.[3] H. I. Un et al., Advanced Science 2019, 6 (20), 1900375.[4] H. Sirringhaus et al., Advanced materials 2014, 26 (9), 1319-1335.[5] H. Chang et al., Org. Electron., 2015, 22, 86-91.[6] Q. Wang et al., ACS applied materials & interfaces 2018, 10 (26), 22513-22519.[7] M. Geiger et al., Advanced Materials Interfaces 2020, 7 (10), 1902145.[8] S. Calvi, et al., Org. Electron., 2022, 102, 106452. Figure 1

Stepped ohmic structure of AlGaN/GaN HEMT with lower off-state leakage current

Abstract Utilizing the TCAD-ATLAS platform, we performed accurate fitting of the electrical characteristics of GaN HEMT devices, achieving a fitting error of less than 5%. Building upon this parameter fitting, we introduced a stepped ohmic structure and compared it with the conventional rectangular structure. The findings highlight the significant impact of the ohmic structure on the off-state drain leakage current of the device. Through the implementation of the stepped ohmic structure, a remarkable reduction in the off-state leakage current was achieved. Specifically, the off-state leakage current decreased by three orders of magnitude, declining from 10−5 mA/mm to 10−8 mA/mm. Importantly, this improvement in leakage current was accomplished without adversely affecting the device’s output characteristics. These results underscore the effectiveness of the stepped ohmic structure in enhancing the overall performance of GaN HEMT devices.

Effects of Fe Contamination on the Reliability of Gate Oxide Integrity in Advanced CMOS Technology

Fe contamination has always been one of the most critical issues in the integrated circuit (IC) industry due to its catastrophic effect on device reliability and electrical characteristics. With complementary metal oxide semiconductor (CMOS) technology scaling down, this issue has been attracting more attention. In this paper, the impact of Fe impurity on the reliability of gate oxide integrity (GOI) in advanced CMOS technology is investigated. Intentional contamination of polysilicon gates was conducted in both boron- and phosphorus-doped devices. Failure analysis of the gate oxide was conducted with high-resolution transmission electron microscopy (HRTEM) and the energy dispersive X-ray (EDX) technique. The experimental results disclose that the properties of PMOS are much more sensitive to Fe contamination than those of NMOS. It is suggested that the reason for the above phenomena is that Fe precipitates at the PMOS gate/oxide interface but dissolves uniformly in the NMOS poly gate due to lower formation energy of the FeB pair (0.65 eV) in PMOS than that of the P4-Fe cluster (3.2 eV) in NMOS.

P‐15: The Back‐channel Effect in Low Temperature Poly‐Si Thin Film Transistors

This paper addresses the mechanism of the back‐channel effect on TFTs (Thin Film Transistors) and proposes novel methods for characterizing and improving the stability of driving TFT devices, including back‐channel and back‐voltage testing. In comparison to routine sticking image and negative bias temperature stress testing, our methods aim to minimize the impact of intrinsic material fluctuations, allowing for independent measurement of the back‐channel effect on TFT device electrical characteristics. We also offer an enhanced option (N2 Plasma treatment of PI surface), that have been used for better the performance of products.

Prediction of electrical properties of GAAFET based on integrated learning model

As device feature sizes continue to decrease and fin field effect transistors reach their physical limits, gate all around field effect transistors (GAAFETs) have emerged with larger gate control areas and stackable characteristics for better suppression of second-order effects such as short-channel effects due to their gate encircling characteristics. Traditional methods for studying the electrical characteristics of devices are mostly based on the technology computer-aided design. Still, it is not conducive to developing new devices due to its time-consuming and inefficient drawbacks. Deep learning (DL) and machine learning (ML) have been well-used in recent years in many fields. In this paper, we propose an integrated learning model that integrates the advantages of DL and ML to solve many problems in traditional methods. This integrated learning model predicts the direct current characteristics, capacitance characteristics, and electrical parameters of GAAFET better than those predicted by DL or ML methods alone, with a linear regression factor (R 2) greater than 0.99 and very small root mean square error. The proposed integrated learning model achieves fast and accurate prediction of GAAFET electrical characteristics, which provides a new idea for device and circuit simulation and characteristics prediction in microelectronics.

Low-resistance TiAl3/Au ohmic contact and enhanced performance on AlGaN/GaN HEMT

The advent of an era characterized by intelligent, interconnected systems of AlGaN/GaN High Electron Mobility Transistors (HEMTs) electronic devices is underway. Within this context, the performance of ohmic contacts in HEMTs bears substantive influence on the electrical characteristics of power devices, notably impacting parameters such as on-resistance and output current. Therefore, the improvement of ohmic contacts attributes in AlGaN/GaN HEMT devices has perennially constituted a focal point of considerable industry. Based on the AlGaN/GaN heterostructure, a novel TiAl3/Au ohmic contact has been successfully developed for HEMTs. A low contact resistance of 0.23 Ω·mm (2.33 × 10-6 Ω·cm2) is obtained, which proposes a new interface contact for AlGaN/GaN heterojunction. Transmission electron microscope (TEM) illustrates that the contact mechanism for low resistance is direct contact with two-dimensional electron gas (2DEG) through the substitution of the TiN compound with a smaller area Au dominated penetration. Concurrently, in contrast to TiN, Au exhibits a diminished capacity for Ga dissolution, thereby substantiating its efficacy in preserving the structural integrity of the crystal lattice. In addition, the reduction of Al can impede the diffusion notably, further showing the smooth surface morphology of the electrode with atomic force microscope (AFM) and scanning electron microscopy (SEM) measurements. The ohmic contacts of HEMTs are individually fabricated with Ti/Al/Ni/Au and TiAl3/Au configurations. The HEMTs with TiAl3/Au ohmic contacts demonstrate superior DC characteristics.

Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

β-(AlxGa1−x)2O3/Ga2O3 modulation-doped field-effect transistors (MODFETs) with a dual-metal gate (DMG) architecture are designed, and the electrical characteristics of the DMG device are investigated in comparison with the single-metal gate (SMG) device by the Technology Computer-Aided Design (TCAD) simulation. The results demonstrate that the DMG MODFETs possess a superior transconductance (gm), current gain cut-off frequency (fT), and power gain cut-off frequency (fMAX) than those of SMG transistors, which is attributed to the regulated channel electric field by a DMG structure. With a gate length of 0.1 μm, the peak values of fT/fMAX of the designed DMG MODFET are obtained as 48.6/50.6 GHz, respectively. Moreover, a comprehensive thermal analysis is conducted between the SMG and DMG devices under steady-state and transient conditions. The DMG MODFET exhibits a lower maximum temperature than the SMG counterpart due to the reduced channel electric field, each subjected to the same power dissipation. This finding underscores the potential of the β-(AlxGa1−x)2O3/Ga2O3 MODFET with the DMG architecture as a promising approach for high-power radio frequency operations.

BDAPbI4 Dion Jacobson hybrid perovskite-based artificial nociceptors on biodegradable substrate

With the current evolution in artificial intelligence technology, biodegradable biomimetic devices are essential to execute increasingly complicated tasks and respond to challenging work environments. Consequently, the integration of artificial nociceptors holds considerable importance in enhancing the capabilities of humanoid robots. Low-dimensional Hybrid organic–inorganic Perovskites (HOIPs) show promise in emulating biological neurons owing to their inherent ion migration properties. In this work, we present Dion-Jacobson hybrid perovskite (BDAPbI4 (BDA=NH3C4H8NH3)) diffusive memristor on a paper substrate to serve as an artificial nociceptor. The symmetric electrode configuration as Paper/Ag/PCBM/BDAPbI4/PMMA/Ag demonstrates low operating voltage diffusive memristor with an ON/OFF ratio of ∼103. The surface investigation of device before top electrode deposition via X-ray photoelectron spectroscopy XPS and electrical characteristics of the complete device reveal the interplay between Schottky barrier at BDAPbI4/Ag interface and conductive filament formation/rupture within active layer as the origin of the abrupt resistive switching. The characteristics of the diffusive memristor resemble those of biological nociceptors, displaying sensitivity to external stimuli and key attributes such as threshold response, lack of adaptation, and relaxation. These findings underscore the potential application of Dion-Jacobson hybrid perovskites (BDAPbI4) as diffusive memristors in future neuromorphic intelligence systems.

MEMS sensitive structure sand and dust friction contamination test and electrical variation characteristics

The impact of dust pollution on the sensitive components of Micro-Electro-Mechanical Systems (MEMS) has been a hot topic in current reliability research. However, previous studies have rarely focused on the fundamental analysis of the influence of dust pollutants on the sensitive components of MEMS, and these research results lack universality. This paper aims to present experimental results on the electrical characteristic changes of MEMS thermal sensitive resistors based on dust friction, providing a more detailed description and explanation. Through dust friction experiments, we investigated the effects of dust particle size and relative humidity on the electrical characteristics of MEMS devices. We chose the resistance value output as the electrical characteristic parameter, based on the performance exhibited during the dust friction experiments. We conducted a detailed analysis of the reasons for the changes in the electrical characteristic parameters. The research results showed that when dust particles settle on the device, the failure mode of the device manifests as resistance drift. The inducing factor is the electrostatic current generated by the friction between dust particles, which enters the sensitive components through the principle of electrostatic dissipation. The measurement principle leads to changes in the resistance value measurement, although the actual resistance value does not change. The magnitude of this electrostatic current is directly proportional to the size of the particles and inversely proportional to the relative humidity. This finding provides theoretical guidance for identifying failure-inducing factors in MEMS failure modes.

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

The device electrical and transient current characteristics of the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) are comprehensively investigated according to the radio-frequency (RF) power during the sputter-deposition of IGZO active film. The RF power dependencies of the oxygen vacancy (VO) concentration in IGZO and the surface morphology of IGZO film are analyzed through X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). According to the RF power change in the range of 100 ∼ 250 W, the optimal point in terms of threshold voltage (VT), ON current (Ion), field-effect mobility in the linear region (μFE_lin), hysteresis voltage (VHys), and the VT shift under current stress (ΔVT) is found to be 200 W. The existence of the optimal power condition originates from the RF-power dependencies of the electron carrier concentration, the density of electron traps in gate insulator (GI), and the interface trap density related to surface roughness.Furthermore, compared to the direct current (DC) current stress (CS) condition, it is found that when VGS rises rapidly, a total transient current ΔID can be decomposed into three components, i.e., ΔIOS, ΔIBOOST, ΔIDEG. While ΔIOS is attributed to the non-quasi static Fermi-level rising, ΔIBOOST and ΔIDEG result from the donor creation in IGZO and the electron trapping into GI and interface. Noticeably, the occurrence level of each component changes sensitively according to RF power.Our result suggests that the 200 W device has the least overshoot of transient current and shows the best reliability in terms of deterioration due to transient current characteristics.

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory.

Herein, sol-gel-processed Y2O3 resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the Y2O3 RRAM devices. The oxidation process, mobile ion migration speed, and reduction process all impact the conductive filament formation of the indium-tin-oxide (ITO)/Y2O3/Ag and ITO/Y2O3/Cu RRAM devices. Between Ag and Cu, Cu can easily be oxidized due to its standard redox potential values. However, the conductive filament is easily formed using Ag TEs. After triggering the oxidation process, the formed Ag mobile metal ions can migrate faster inside Y2O3 active channel materials when compared to the formed Cu mobile metal ions. The fast migration inside the Y2O3 active channel materials successfully reduces the SET voltage and improves the number of programming-erasing cycles, i.e., endurance, which is one of the nonvolatile memory parameters. These results elucidate the importance of the electrochemical properties of TEs, providing a deeper understanding of how these factors influence the resistive switching characteristics of metal oxide-based atomic switches and conductive-metal-bridge-filament-based cells.

Evaluation of flip-chip bonding electrical connectivity for ultra-large array infrared detector.

Flip-chip bonding is a key technology for infrared focal plane array (IRFPA) detectors. Due to the high cost of device preparation, the ultra-large array infrared detector cannot be directly used for the flip-chip bonding experiment, and the connectivity rate cannot be measured. To evaluate the flip-chip bonding process, a test device which has the same interconnecting structure as current IRFPA detectors is proposed. Indium bumps are electrically extracted to test electrodes. Electrical measurements were performed to characterize the connection and adhesion of the indium bumps and to calculate the connectivity rate. The electrical connectivity characteristics of the test devices correspond to the observation results of the indium bump extrusion, effectively detecting the interconnecting anomalies such as disconnection, adhesion, overall misalignment, etc., and verifying the feasibility of the test method. The test device has similar multi-layer components and thermal properties as HgCdTe infrared detector for process evaluation and post-processing experiment. The connectivity rate of the test device is up to 100%, and remains above 99% after thermal recycle experiment. The contact resistance of the interconnecting structure is calculated to be about 31.84 Ω based on the test results.

Research and application of SiC _ MOSFETs in DC-DC circuit of new energy electric vehicle

In recent years, with the continuous optimization and improvement of power devices, various types of devices such as SiC _ MOSFETs, IGBTs, and Si _ MOSFETs have emerged in the market. Although the datasheets for these devices provide detailed descriptions of their device structures and electrical characteristics, there is a relative scarcity of specific application scenarios and corresponding simulation experimental data. This paper aims to comprehensively review recent research on the device structures and electrical characteristics of SiC _ MOSFETs, IGBTs, and Si _ MOSFETs. Additionally, we intend to conduct a systematic classification and comparative analysis to evaluate their performance in practical circuit applications. Furthermore, we have utilized MATLAB and Simulink to construct a representative simulation model of a DC-DC Buck-Boost circuit for new energy electric vehicles. Common SiC _ MOSFETs, IGBTs, and Si _ MOSFETs available in the market have been selected, and their parameters have been configured to match those in the simulation circuit. This approach enables us to explore the performance of these components in real-world circuit applications. Subsequently, the performance of these simulated circuits has been rigorously examined in practical scenarios. This comprehensive analysis provides a deeper understanding of the advantages of SiC _ MOSFETs compared to the other two devices and their potential contribution to the future development of electric vehicle technology. We anticipate that this research will drive advancements in electric vehicle technology and contribute to the realization of sustainable mobility.

Modeling, Optimization, and Simulation of Nanomaterials-Based Organic Thin Film Transistor for Future Use in pH Sensing.

Applications of Organic Thin Film Transistor (OTFT) range from flexible screens to disposable sensors, making them a prominent research issue in recent decades. A very accurate and exact pH sensing determination, including biosensors, is essential for these sensors. In this present research work, authors have proposed a nanomaterial-based OTFT for future pH monitoring and other biosensing applications. This work presents a numerical model of a pH sensor based on Carbon Nano Tubes (CNTs). Sensing in harsh conditions may be possible with the CNTs due to their strong chemical and thermal resilience. This research work describes the numerical modeling of Bottom-Gate Bottom-Contact (BGBC) OTFTs with a Semiconducting Single-Walled Carbon Nanotube (s-SWCNT) and C60 fullerene blended active layer. The design methodology of organic nanomaterial-based OTFTs has been presented with various parameter extraction precisely its electrical characteristics, modeled by adjusting the parameters of the basic semiconductor technology. For an active layer thickness of 200 nm, the drain current of the highest-performing s-SWCNT:C60 -based OTFT structure was around 4.25 A. This allows for an accurate representation of the device's electrical characteristics. Using Gold (Ag) Source/Drain (S/D) and back-gate electrodes as the medium for sensing, it has been realized how the thickness of the active layer impacts the performance of an OTFT for pH sensor applications.

Post-trench restoration for vertical GaN power devices

The impact of the post-trench restoration on the electrical characteristics of vertical GaN power devices is systematically investigated in this work. Following the achievement of microtrench-free GaN trench structure with modified dry etching conditions, the post-trench tetramethylammonium hydroxide (TMAH)-based wet etching and UV/Ozone-based oxidation process are employed to further refine the trench profile. It is shown that the c-plane trench bottom is restored to the level of unetched surface, as evidenced by the improved Schottky interface. Additionally, the post-trench treatment exhibits the anisotropic characteristics with the preferred rounded corner profile on m-plane sidewall compared to a-plane sidewall. The simulations and experimental results demonstrate that the trench MOS barrier Schottky (TMBS) rectifier based on m-plane sidewall could suppress the electric field crowding at the trench corner and, hence, reduce the reverse leakage current by 1–2 orders of magnitude. Furthermore, the MOSCAP test structures were fabricated on the trenches. The extracted interface trap density (Dit) confirms the effective restoration of trench bottom. However, the sidewall surface exhibits the relatively large Dit, which emphasizes the necessity of optimizing the sidewall, particularly for devices incorporating sidewall channel. The demonstrated post-trench restoration technique improves the surface quality and trench structure for the significantly enhanced electrical performances, which is essential for the development of vertical GaN power devices.

Novel Meta-Fractal Wearable Sensors and Antennas for Medical, Communication, 5G, and IoT Applications

Future communication, 5G, medical, and IoT systems need compact, green, efficient wideband sensors, and antennas. Novel linear and dual-polarized antennas for 5G, 6G, medical devices, Internet of Things (IoT) systems, and healthcare monitoring sensors are presented in this paper. One of the major goals in the evaluation of medical, 5G, and smart wireless communication devices is the development of efficient, compact, low-cost antennas and sensors. Moreover, passive and active sensors may be self-powered by connecting an energy-harvesting unit to the antenna to collect electromagnetic radiation and charge the wearable sensor battery. Wearable sensors and antennas can be employed in smart grid applications that provide communication between neighbors, localized management, bidirectional power transfer, and effective demand response. A low-cost wearable antenna may be developed by etching the printed feed and matching the network on the same substrate in the printed antenna. Active modules may be placed on the same dielectric board. The antenna design parameters and a comparison between the computation and measured electrical performance of the antennas are presented in this paper. The electrical characteristics of the new compact antennas in the vicinity of the patient’s body were simulated by using electromagnetic simulation techniques. Fractal and metamaterial efficient antennas and sensors were evaluated to maximize the electrical characteristics of smart communication and medical devices. The dual- and circularly polarized antennas developed in this paper are crucial to the evaluation of wideband and multiband compact 5G, 6G, and IoT advanced systems. The new efficient sensors and antennas maximize the system’s dynamic range and electrical characteristics. The new efficient wearable antennas and sensors are compact, wideband, and low-cost. The operating resonant frequency of the metamaterial antennas with circular split-ring resonators (CSRRs) may be 5% to 9% lower than the resonant frequency of the sensor without CSRRs. The directivity and gain of the metamaterial fractal antennas with CSRRs may be up to 3 dB higher than the antennas without CSRRs. The directivity and gain of the metamaterial fractal passive sensors with CSRRs may be up to 8.5 dBi. This study presents new wideband active meta-fractal antennas and sensors. The bandwidth of the new sensors is around 9% to 20%. At 2.83 GHz, the receiving active sensor gain is 13.5 dB and drops to 8 dB at 3.2 GHz. The receiving module noise figure with TAV541 LNA is around 1dB.

Novel Electric Propulsion System Analysis Method for Electric Vertical Takeoff and Landing Aircraft Conceptual Design

This paper proposes novel enhancements to the electric propulsion system analysis method for electric vertical takeoff and landing (eVTOL) aircraft conceptual design by considering the electrical characteristics of each electrical device in a more accurate manner. To this end, three modules for motor, inverter, and battery analysis are constructed using equivalent circuits and semi-empirical models. First, the motor analysis module is developed using equivalent circuit analysis with the operation control strategy for a permanent-magnet synchronous motor. Second, the inverter analysis module is built using average loss models for the switching and conduction losses. Third, the battery analysis module is improved using the near-linear discharge model to consider the voltage drop during operation. Moreover, additional modules, such as those for calculating the battery stack in series and parallel, as well as regression models for the motor and inverter performance parameters and consideration of the drive system type (direct or indirect, including a reduction gear), are implemented. A comparative study is presented from an analysis and design perspective while changing the drive system type (direct or indirect) and gear ratio, which highlights the importance of modeling electrical characteristics during eVTOL aircraft conceptual design.