Abstract
In recent years, with the continuous optimization and improvement of power devices, various types of devices such as SiC _ MOSFETs, IGBTs, and Si _ MOSFETs have emerged in the market. Although the datasheets for these devices provide detailed descriptions of their device structures and electrical characteristics, there is a relative scarcity of specific application scenarios and corresponding simulation experimental data. This paper aims to comprehensively review recent research on the device structures and electrical characteristics of SiC _ MOSFETs, IGBTs, and Si _ MOSFETs. Additionally, we intend to conduct a systematic classification and comparative analysis to evaluate their performance in practical circuit applications. Furthermore, we have utilized MATLAB and Simulink to construct a representative simulation model of a DC-DC Buck-Boost circuit for new energy electric vehicles. Common SiC _ MOSFETs, IGBTs, and Si _ MOSFETs available in the market have been selected, and their parameters have been configured to match those in the simulation circuit. This approach enables us to explore the performance of these components in real-world circuit applications. Subsequently, the performance of these simulated circuits has been rigorously examined in practical scenarios. This comprehensive analysis provides a deeper understanding of the advantages of SiC _ MOSFETs compared to the other two devices and their potential contribution to the future development of electric vehicle technology. We anticipate that this research will drive advancements in electric vehicle technology and contribute to the realization of sustainable mobility.
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