Abstract

With the current evolution in artificial intelligence technology, biodegradable biomimetic devices are essential to execute increasingly complicated tasks and respond to challenging work environments. Consequently, the integration of artificial nociceptors holds considerable importance in enhancing the capabilities of humanoid robots. Low-dimensional Hybrid organic–inorganic Perovskites (HOIPs) show promise in emulating biological neurons owing to their inherent ion migration properties. In this work, we present Dion-Jacobson hybrid perovskite (BDAPbI4 (BDA=NH3C4H8NH3)) diffusive memristor on a paper substrate to serve as an artificial nociceptor. The symmetric electrode configuration as Paper/Ag/PCBM/BDAPbI4/PMMA/Ag demonstrates low operating voltage diffusive memristor with an ON/OFF ratio of ∼103. The surface investigation of device before top electrode deposition via X-ray photoelectron spectroscopy XPS and electrical characteristics of the complete device reveal the interplay between Schottky barrier at BDAPbI4/Ag interface and conductive filament formation/rupture within active layer as the origin of the abrupt resistive switching. The characteristics of the diffusive memristor resemble those of biological nociceptors, displaying sensitivity to external stimuli and key attributes such as threshold response, lack of adaptation, and relaxation. These findings underscore the potential application of Dion-Jacobson hybrid perovskites (BDAPbI4) as diffusive memristors in future neuromorphic intelligence systems.

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