The photoelectric response of organic field-effect transistors (OFETs) will cause severe photoelectric interference, which hinders the applications of OFETs in the light environment. It is highly challenging to relieve this problem because of the high photosensitivity of most organic semiconductors. Here, we propose an efficient "exciton-polaron quenching" strategy to suppress the photoelectric response and thus construct highly photostable OFETs by utilizing a polymer electrolyte dielectric─poly(acrylic acid) (PAA). This dielectric produces high-density polarons in organic semiconductors under a gate electric field that quench the photogenerated excitons with high efficiency (∼70%). As a result, the OFETs with PAA dielectric exhibit unprecedented photostability against strong light irradiation up to 214 mW/cm2, which far surpasses the reported values and solar irradiance value (∼138 mW/cm2). The strategy shows high universality in OFETs with different OSCs and electrolytes. As a demonstration, the photostable OFET can stably drive an organic light-emitting diode (OLED) under light irradiation. This work presents an efficient exciton modulation strategy in OSC and proves a high potential in practical applications.