Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs

Abstract

In this paper, we present an Analytical-Numerical model for reverse gate leakage current in AlGaN/GaN high electron mobility transistors (HEMTs), which investigate the influence of the hydrostatic pressure (HP) on gate-current. Salient features of the model are incorporated of occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of AlGaN/GaN (HEMTs). It has been found that the bound charge at the heterointerface has the most impact on the threshold voltage. The increases in hydrostatic pressure cause an increase in threshold voltage. With increasing HP, the Schottky barrier height decreases, AlGaN electric field and reverse gate leakage current are increased. The increase in HP acts as a positive virtual gate. The dependence on the HP of Poole- Frenkel emission (FP) and Fowler-Nordheim (FN) direct tunneling is more than trap-assisted-tunneling (TAT). Increasing the pressure of 2GPa, the intersection point of PF and TAT varies by 1 volt, the reverse gate current increases by an average of 35%, and the threshold voltage increases to 1.15 V in absolute terms.