Abstract
AC stress was applied to the IWZO thin film transistor with high mobility, and its deterioration phenomenon was observed. As a result, a rare phenomenon in which the ON current deteriorates was observed. A deterioration model was proposed by reference experiments using DC stress, emission analysis using an emission microscope, and electric field distribution analysis using a device simulator. It was concluded that the deterioration is due to hot carriers that occur when the gate electric field changes from ON to OFF.
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