The authors report highly efficient GaN-based light-emitting diodes (LEDs) fabricated with Ti/Ag/Pt reflective p-type contact. Compared with the reference Ni/Ag/Pt contact, Ti/Ag/Pt contact annealed at optimized thermal annealing condition produced low specific contact resistances of 5.7 × 10−4 Ω cm2, and good optical reflectivity of 88.4% at 450 nm. This is due to the generated interfacial Ti–O layer upon thermal annealing in N2 ambient, which suppress the excessive inter-diffusion between Ag and GaN layers. Consequently, the LEDs fabricated with Ti/Ag/Pt contacts showed 32.6% brighter light output power and nearly the same forward voltages as compared to the reference LEDs fabricated with Ni/Ag/Pt contacts.