Abstract
Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.
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