Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

Abstract

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5μm width, 1.2μm height, and 0.8μm spacing were formed on sapphire substrate by dry etching using BCl3/Cl2 gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.