Abstract
Abstract The method of surface patterning of indium tin oxide (ITO) transparent current layer has been investigated in this study to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). Optimized design of the patterns on ITO has been performed by ray-tracing simulation and LEDs with different periodic micro-circle structures on ITO have been fabricated. The light output power of the LEDs with the optimal patterns on ITO exhibited 46.4% enhancement compared to the conventional LEDs at 20 mA injection current without electrical degradation. Detailed processing parameters are also provided. It is indicated from the results that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs.
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