Abstract
Improvement of quantum efficiency (QE) in GaN-based light-emitting diodes is explored by engineering the band-edge profile with local doping modulation that leads to band bending due to the built-in electric field. Specifically, by p-type doping selected quantum well (QW) barriers, the overall Auger recombination rate can be suppressed due to more uniform carrier distributions, or electron leakage can be reduced due to greater effective barrier height of the electron blocking layer in the conduction band. Having doping modulation at several QW barriers, these two effects may be adopted in one structure combinatively. Physical mechanisms of performance improvement and the effects of p-type doping at different QW barriers are investigated detailedly.
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