Drift Region Research Articles

An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer

This paper investigates an improved trench MOS barrier Schottky (TMBS) structure with extra double epitaxial layers (DE-TMBS) based on the conventional TMBS (C-TMBS) featuring a high-doped N-type current spreading layer (CSL) and a high-doped low resistance layer (LRL). Compared to the C-TMBS, the CSL in the improved structure is grown on the N-type drift region, and the LRL is extended on the CSL. According to the numerical simulations and analytical models, the specific on-resistance (Ron,sp) of DE-TMBS can be significantly reduced compared to the conventional one. This is primarily due to the high doping concentration in CSL, which effectively lowers both the JFET resistance and spreading resistance. Additionally, the increased doping concentration in LRL reduces the channel resistance and JFET resistance. Moreover, the doping concentration and thickness of CSL and LRL are optimized to maximize the figure of merit (FOM), that Ron,sp is reduced by 40.9 % and the FOM (BV2/Ron,sp) is improved by 67.9 % compared to the C-TMBS structure.

Wind tunnel testing and performance modeling of an atmospheric ion thruster

Abstract In this work a complete atmospheric electro–hydro-dynamic (EHD) thruster is tested in a subsonic wind tunnel, with the purpose of evaluating changes in performance due to simulated flight conditions and, for the first time, comparing them with a physical model of the drift region. An aerodynamic frame was designed to accommodate the electrodes inside the wind tunnel. Propulsive force and electrical measurements were conducted to assess performance exploiting dimensionless coefficients derived from one-dimensional theory. The results, on top of validating the theory, show how EHD thrusters can operate with a non-zero bulk velocity and highlight the importance of optimized frames and electrodes to enhance the capabilities of flying demonstrators. The test campaign revealed that the operating voltage envelope extends with increasing bulk velocity, leading to an increase in maximum thrust.

Design strategies and systematic analysis of GaN vertical MPS diodes with T-shaped shielding rings

Abstract We report gallium nitride (GaN) vertical merged pn-Schottky (MPS) diodes with T-shaped p-GaN shielding rings (SRs). The embedded T-shaped SR features an overlapped depletion region by the lateral and vertical p n junctions under reverse bias condition, which can effectively enhance the charge coupling effect and homogenize the 2-D electric field distribution. In the meantime, the incorporation of the T-shaped SRs can minimize unnecessary depletion of the vertical conduction channel and guarantee a decent current spreading through the drift region. The impact of the key design parameters on the reverse breakdown and forward conduction performance are investigated systematically. We found that the doping concentration and the geomatical shape of the T-shaped p-GaN SRs are closed related to the electric field distribution and forward current conduction behavior, which determines the reverse breakdown and forward conduction performance. With optimum design parameters of the T-shaped SRs, the breakdown voltage of the MPS diodes features a dramatic improvement to 2749 V from 1123 V in conventional MPS diodes. The results can provide a design strategy for high performance vertical GaN power diodes towards high-power and high-frequency applications.

Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective

Power semiconductor devices are utilized as solid-state switches in power electronics systems, and their overarching design target is to minimize the conduction and switching losses. However, the unipolar figure-of-merit (FOM) commonly used for power device optimization does not directly capture the switching loss. In this Perspective paper, we explore three interdependent open questions for unipolar power devices based on a variety of wide bandgap (WBG) and ultra-wide bandgap (UWBG) materials: (1) What is the appropriate switching FOM for device benchmarking and optimization? (2) What is the optimal drift layer design for the total loss minimization? (3) How does the device power loss compare between WBG and UWBG materials? This paper starts from an overview of switching FOMs proposed in the literature. We then dive into the drift region optimization in 1D vertical devices based on a hard-switching FOM. The punch-through design is found to be optimal for minimizing the hard-switching FOM, with reduced doping concentration and thickness compared to the conventional designs optimized for static FOM. Moreover, we analyze the minimal power loss density for target voltage and frequency, which provides an essential reference for developing device- and package-level thermal management. Overall, this paper underscores the importance of considering switching performance early in power device optimization and emphasizes the inevitable higher density of power loss in WBG and UWBG devices despite their superior performance. Knowledge gaps and research opportunities in the relevant field are also discussed.

Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm

The introduction of the step thickness drift region (ST) technique has increased the design complexity of silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS). This paper proposes a physics-inspired automatic optimization method for the ST structure of SOI LDMOS using constrained simulated annealing algorithm. Since breakdown voltage (BV) and specific on-resistance (Ron,sp) need to be optimized simultaneously, an optimization function based on Baliga's Figure of Merit (BFOM) is introduced. Besides, constraints are introduced to ensure that BV is greater than the initial BV and Ron,sp is less than the initial Ron,sp. Results demonstrate that the BFOM values increase by an average of 134.9 %, 163.6 %, and 113.8 % when the breakdown occurs at the N+N junction, PN junction, and in-the-body after optimizing the ST structure, respectively. Besides, introducing constraints during the automatic design process allows for the simultaneous optimization of both the BV and Ron,sp. Furthermore, the proposed method is also efficient, with 86 % of the optimization design processes completed within 18 seconds.

Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact

In this work, MeV alpha particles generated from an accelerator are used to study single event breakdown (SEB) in 4H-SiC MOSFET samples, rated at 3.3 kV. The samples are exposed to bursts of alpha particles under reverse bias conditions to investigate the SEB sensitivity to ion energy and reverse bias. The energies of alpha particles are chosen to reach different depths in the drift region of the MOSFET devices, and also to penetrate the whole drift region. Forward and reverse characteristics are measured after each exposure, as long as no failures occur, to ensure that the device performance is maintained. The measurements show that no significant effects are observed on the drain-source leakage current, while minor effects on gate behavior can be seen as a function of accumulated fluence. Furthermore, SEB can only be triggered with a reverse bias larger than, or equal to 3 kV. A standard MOSFET cell with a similar rated voltage is also simulated in Sentaurus TCAD to study these effects, using two different models for the incident ion-induced ionization: the Alpha Particle and the Heavy Ion model. Simulations show that the Alpha Particle model cannot induce any device failures even with a 3.5 kV reverse bias, while it is possible to trigger a failure by the Heavy Ion model, where the ionization can be selected. Carrier plasma and internal electric field distributions of the two models are plotted and compared, showing that device failures triggered by a heavy ion are related to the hole injection at epi-substrate interface, in which linear energy transfer (LET) of the particle plays an important role.

Spatial Nonuniformity of Photoresponse in SiC UV Avalanche Photodiodes Operating in Linear and Geiger Mode

Silicon Carbide's intrinsic material properties, along with the availability of low-defect density, 6" substrates, make it an attractive material system for visible-blind ultraviolet (UV) detectors. Avalanche photodiodes (APDs) made from SiC have been shown to operate both as linear mode detectors with high gain (>10⁷) and as single-photon avalanche detectors (SPADs) with competitive photon detection efficiency. However, reported spatial non-uniformities in photoresponse of these devices will reduce sensitivity [1,2].In this paper, we examine the impact of device geometry, epitaxial variations, and crystal anisotropy on the spatial uniformity of photoresponse in SiC APDs. Photoresponse maps are generated using a fast 285 nm pulsed LED source that is tightly focused to a ~10 µm spot. Response maps are measured for devices with different geometries fabricated on the same chip in both linear-mode and Geiger-mode. Measurements on standard pin diodes will be presented, along with separate absorption, charge, and multiplication (SACM) structures.Experimental results indicate that all devices exhibit localized regions of high photoresponse at gain > 1000 and that the spreading of the photoresponse is highly directional. Finger diodes with 120 μm x 30 μm mesas exhibit good response uniformity with a variation < 30% across the device. In contrast, diodes with 60 and 90 μm square-shaped mesas exhibit similar uniform response spreading along one edge that is bounded by the size of the mesa, but a >10x drop in relative response over ~30-40 μm in the orthogonal direction which is much shorter than the extent of the mesa. Devices with 100 μm circular mesas exhibit somewhat similar results to the square diodes, but with the presence of multiple hot spots in response.Experimental results are analyzed through 3D numerical modeling of devices which accounts for the effects of doping and thickness variations across the substrate as well as the anisotropy of impact ionization. Modeling indicates that small variations in the thickness in the drift regions of a diode can yield meaningful variations in avalanche gain across the mesa. The impact of anisotropic impact ionization will be considered using full-band 3D Monte Carlo calculations. X. Bai, H.-D. Liu, D. C. McIntosh and J. C. Campbell, "High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes," IEEE J. Quantum Electron. 45 300-303 (2009). DOI: 10.1109/JQE.2009.2013093.L. Su et al, "Recent progress of SiC UV single photon counting avalanche photodiodes," J. Semicond. 40 121802 (2019). DOI: 10.1088/1674-4926/40/12/121802. Figure 1

(Electronics and Photonics Division Award) Research Advances Wide- and Ultrawide-Bandgap Power Switching Devices

Wide bandgap semiconductors such as SiC and GaN (WBG) and emerging ultrawide-bandgap materials such as Ga2O3, AlGaN, and Diamond (UWBG) represent the next-generation materials for high performance medium voltage and high voltage power switch technology. Such devices have a wide range of immediate Naval applications, including high-power satellite communications and radar, unmanned underwater and aerial vehicles, ship drive components, and hybrid vehicle inverters. Vertical SiC power device technology has matured rapidly over the past two decades, owing to advances in substrates, a fundamental understanding of epitaxial growth to eliminate performance-limiting defects, as well as device design breakthroughs. This has enabled breakthroughs in highly integrated module design for medium voltage power conversion with switching frequency >100 kHz. In parallel, lateral GaN-based high electron mobility transistor (HEMT) technology has been highly successful for RF power amplifiers and is well positioned to supersede GaAs-based microwave circuits. Recently, GaN-based vertical and lateral power devices have attracted significant interest due to promising device results coupled with progress in native substrate, epitaxial growth, and processing technology developments. This seminar will present an overview of the WBG/UWBG power device efforts at NRL. This research has four primary focus areas – 1) thermal management in III-N power device structures by diamond thin film integration, 2) characterization of substrate materials and homoepitaxial layers used for drift regions of power devices identify appropriate specifications and benchmark performance, 3) process module development, particularly for selective area doping by ion implantation, and 4) pilot production manufacturing of 1.2kV-class PiN diodes including reliability assessments to identify and mitigate performance limiting defects.

Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric

This paper proposes a 4H-SiC superjunction trench MOSFET with extended high-K dielectric under metal gate (EHK SJ-TMOS). The characteristics of EHK SJ-TMOS include the use of the high-K (HK) dielectric as the gate dielectric and the extension of the HK dielectric as a deep trench into the N-type drift region. The extended HK trench effectively modulates the electric field distribution in the SJ drift region, which improves the breakdown voltage (BV). The introduction of HK dielectric also assists in depleting the SJ drift region, which enables the drift region of EHK SJ-TMOS to use a higher doping concentration, thereby reducing Ron,sp. Furthermore, the application of high-K gate dielectric alleviates the high gate oxide electric field problem in conventional SiC superjunction trench MOSFETs (SiC SJ-TMOS). The simulation results demonstrate that EHK SJ-TMOS exhibits a 59.2 % reduction in Ron,sp, a 2.4 % increase in BV, and a 156.5 % improvement in the FOM (FOM = BV2/Ron,sp) compared to the SiC SJ-TMOS, indicating enhanced performance.

A fast-switching and ultra low-loss snapback-free reverse-conducting SOI-LIGBT with Adjustable Carrier Technology

A snapback-free Reverse-Conduction Silicon On Insulator Lateral Insulate Gate Bipolar Transistor (RC SOI-LIGBT) with Adjustable Carrier Technology (ACT LIGBT) is proposed in this paper. ACT LIGBT adds Semi-Insulating Polycrystalline Silicon (SIPOS) material on the extended gate dielectric, and introduces the potential of the surface SIPOS into the P-type drift region (P-Drift) through SiO2 trenches. ACT LIGBT generates the inversion layer of electrons in the P-Drift due to the linear potential distribution brought by the high resistance characteristic of SIPOS, resulting in the adjustment of the number of electrons and holes, and forming the technology of ACT. Additionally, ACT LIGBT adds a hole extraction path during it turned off. Meanwhile, compared to SSA LIGBT, ACT LIGBT optimized the BV (700V) by 34 %, while also optimizing the Von (1.69V) by 25 %, turn-off time (toff = 12ns) by 92 %, turn-off loss (Eoff = 0.69 mJ/cm2) by 79 %, and reverse recovery charge (Qrr = 32.98 μC/cm2) by 32.5 %, ultimately achieving a better compromise relationship among BV, Von, toff, Eoff, and Qrr.

“Dynamics of chromophoric dissolved organic matter in the Atlantic Ocean: unravelling province-dependent relationships, optical complexity, and environmental influences”

We report on the spatial distributions and optical characteristics of chromophoric dissolved organic matter (CDOM) in the sea surface microlayer (SML), subsurface seawater (SSW), and water column profiles down to 500 m across a range of Atlantic Ocean biogeochemical provinces during two cruises of the UK Atlantic Meridional Transect program (AMT24 and AMT25). We measured the CDOM absorption coefficient at 300 nm, aCDOM(300), and determined CDOM spectral slopes across two UV wavelength ranges: S1 (275-295 nm) and S2 (350-400 nm). We used spectral slope ratios (SR: S1/S2) to infer CDOM source characteristics and transformation history. During both cruises, SML aCDOM(300) was highest in the Northern Hemisphere, particularly in the North Atlantic Drift Region (NADR). CDOM was always enriched in the SML, with enrichment factors (SML aCDOM(300) / SSW aCDOM(300)) ranging from 1.03 to 2.00, reflecting preferential accumulation of CDOM in the SML. We also found a significant inverse correlation between aCDOM(300) and S1 in both the SML (Spearman’s rank correlation coefficient, r2 = -0.75, p &amp;lt; 0.001, n = 114) and water column profiles (r2 = -0.74, p &amp;lt; 0.001, n = 845). Biogeochemical province-dependent variations in the relationships between CDOM and chlorophyll a were also observed. In high-latitude regions, elevated aCDOM(300) and low SR values indicated a dominance of terrestrially-derived CDOM, whereas oligotrophic subtropical areas showed lower aCDOM(300) and higher SR values, suggestive of aged, refractory, and photodegraded biologically-derived CDOM. Taken together, these findings reveal a complexity of drivers affecting CDOM distributions and spectral properties, which may limit the use of CDOM in predictive relationships in the oceans. However, the potential use of chlorophyll a as a CDOM proxy may prove most successful in open ocean regions devoid of terrestrial inputs, where biological production predominates.

Reliable Detection of Chemical Warfare Agents Using High Kinetic Energy Ion Mobility Spectrometry.

High Kinetic Energy Ion Mobility Spectrometers (HiKE-IMS) ionize and separate ions at reduced pressures of 10-40 mbar and over a wide range of reduced electric field strengths E/N of up to 120 Td. Their reduced operating pressure is distinct from that of conventional drift tube ion mobility spectrometers that operate at ambient pressure for trace compound detection. High E/N can lead to a field-induced fragmentation pattern that provides more specific structural information about the analytes. In addition, operation at high E/N values adds the field dependence of ion mobility as an additional separation dimension to low-field ion mobility, making interfering compounds less likely to cause a false positive alarm. In this work, we study the chemical warfare agents tabun (GA), sarin (GB), soman (GD), cyclosarin (GF) and sulfur mustard (HD) in a HiKE-IMS at variable E/N in both the reaction and the drift region. The results show that varying E/N can lead to specific fragmentation patterns at high E/N values combined with molecular signals at low E/N. Compared to the operation at a single E/N value in the drift region, the variation of E/N in the drift region also provides the analyte-specific field dependence of ion mobility as additional information. The accumulated data establish a unique fingerprint for each analyte that allows for reliable detection of chemical warfare agents even in the presence of interfering compounds with similar low-field ion mobilities, thus reducing false positives.

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

A fast-switching low-loss field-stop insulated gate bipolar transistor with a dual control gate (DIGBT) of a semi-insulating polycrytalline silicon (SIPOS) material is proposed in this paper. Because the SIPOS has uniform high resistance, it has an approximate linear electric potential distribution. When DIGBT conducts, the higher electric potential on SIPOS causes the P-type drift region (P-drift) to generate an inversion layer of electrons, adjusting the number of carriers and making the generation of non-equilibrium carriers no longer dependent on the doping concentration in P-drift (Nd) but on the electric potential distribution on SIPOS. Therefore, it can solve the contradiction among the breakdown voltage, forward voltage drop [VCE(sat)], turn-off time (toff), and turn-off loss (Eoff) caused by the Nd. Through Technology Computer Aided Design (TCAD) simulation, the VCE(sat) of DIGBT is 30.6% lower than that of SJFS IGBT. Meanwhile, DIGBT reduces the toff by 62.8% while reducing the Eoff by 83.0% compared to SJFS IGBT. In addition, the static latch-up I–V and the forward biased safe operating area of the DIGBT have been significantly improved. This paper adjusts the number of carriers through the characteristics of SIPOS material, enabling the above-mentioned physical phenomena to be applied in insulated gate bipolar transistor power devices and achieving device performance breakthroughs.

A semi-cellular Z-type Gate SOI-LDMOS with Improved Gate Control Capability

A Semi-cellular Z-type Gate SOI-LDMOS (ZG LDMOS) with Improved Gate Control Capability is proposed, and its physical mechanism is studied by SENTAURUS. It is a semi-cellular structure similar to "Z" consisting of a Trench Gate (TG) and a Planar Gate (PG). At the on-state, the inversion layer of the conductive channel is not only formed at the top of the P-well region, but also formed along the side wall of the Z Gate, expanding the width of the channel, improving the electron injection ability and reducing the specific on-resistance (Ron,sp). In addition, the Z Gate can also form a uniform current distribution from the drift region to the bottom, which is helpful to reduce the Ron,sp, improve the transconductance and enhance the current control ability. The 3D simulation results show that BV, Ron,sp are 187.3 V and 4.45 mΩ cm2, respectively. The FOM reached 7.91 MW/cm2. Compared with the conventional LDMOS, the FOM value of ZG LDMOS increased by 58.8 %, which breaks through the silicon limit of RESURF.

Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance

—In this paper, a novel superjunction fin-based NiO/β-Ga2O3 heterojunction field-effect transistor (SJ Fin-HJFET) is proposed and studied by simulations. Compared with the conventional Ga2O3 SJ FinFET, Ga2O3 SJ Fin-HJFET can generate surface conduction channels instead of depletion zones near the p-n junction interface in the SJ drift region. The additional surface conduction channel significantly improves the specific on-resistance of the SJ Fin-HJFET (from 1.091 mΩ cm2 to 0.397 mΩ cm2, reduced by 63.6 %) and dramatically improves the Baliga figure of merit (BFOM, form 11.75 GW/cm2 to 32.28 GW/cm2) at the same breakdown voltage (3580 V). The effect of different conduction band offset (ΔEC) on the performance of the SJ Fin-HJFET is also investigated. The simulation results show that the on-resistance advantage of the SJ Fin-HJFET applies to a wide range of ΔEC, exhibiting strong applicability and stability. These results indicate that the SJ Fin-HJFET has record-high performance and promising application prospects.

Lateral 1200V SiC schottky barrier diode with single event burnout tolerance

For a power device to be used in space, it must be able to recover from a single event effect caused by heavy ion radiation. Conventional vertical silicon carbide (SiC) power devices such as automotive diodes and MOSFETs, can only meet this requirement if they are heavily derated, a 1200 V device typically unusable above 200 V. In this paper, a lateral RESURF Schottky diode has been designed in TCAD simulation using a radiation-hard (rad-hard) by design methodology. By preventing anode-to-cathode shorting that occurs in a vertical drift region, the lateral design is shown to recover after a heavy ion traverses the device with a linear energy transfer (LET) of 60 MeV·cm2/mg, while the device is blocking 1200 V. The design splits the drift region into a higher doping zone closer to the cathode (Zone 2) of 1.5×1017 cm−3 and a lower doping zone closer to the anode (Zone 1) of 1×1016 cm−3. The electric field spikes were reduced while the device was recovering. This design keeps the local temperature in the device to under 1000 K if the heavy ion penetrates the device in a direction perpendicular to the surface. Other entry positions and directions are also simulated and a maximum temperature of 1733 K occurs when the ion path is horizontal, entering at 1 μm below the surface. However, this temperature peak occurs at the cathode, which is not expected to lead to lasting leakage damage. A deep P+ pillar embedded into the anode acts as a collector for holes generated during the single event. Simulations show that a deeper P+ pillar, to a depth of up to 5 μm, reduces the hole density in the N-drift region and P-epi layer during recovery. This also allows the Zone 1 doping to be increased to as much as 5×1016 cm−3, thereby reducing on-state losses.

Spatial resolution improvements with finer-pitch GEMs

Gas Electron Multipliers (GEMs) are used in many particle physics experiments, employing their `standard' configuration with amplification holes of 140 μm pitch in a hexagonal pattern. However, the collection of the charge cloud from the primary ionisation electrons from the drift region of the detector into the GEM holes affects the position information from the initial interacting particle. In this paper, the results from studies with a triple-GEM detector with an X-Y-strip readout anode are presented. It is demonstrated that GEMs with a finer hole pitch of here 90 μm improve the detector's spatial resolution. Within these studies, also the impact of the front-end electronics on the spatial resolution was investigated, which is briefly discussed in the paper.

High-Voltage Indium-Tin-Oxide Thin-Film Transistors Possessing Drift Region Capped With Indium-Tin-Oxide Layer

High-Voltage Indium-Tin-Oxide Thin-Film Transistors Possessing Drift Region Capped With Indium-Tin-Oxide Layer

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region.

To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion implantation at the surface of the LDMOS drift region and by drift region dimension optimization. Technology computer-aided design (TCAD) simulations show that the optimal value of Resurf ion implantation dose 1 × 1012 cm-2 can reduce the surface electric field in the n-drift region effectively, thereby improving the ON-state breakdown voltage of the device (BVon). In addition, the extended n-drift region length of the Ld design also improves device BVon significantly, and is aimed at reducing the current density and the electric field, and eventually suppressing the n-drift region impact ionization. The results show that the novel 60 V nLDMOS has a competitive BVon performance of 106.9 V, which is about 20% higher than that of the conventional one. Meanwhile, the OFF-state breakdown voltage of the device (BVoff) of 88.4 V and the specific ON-resistance (RON,sp) of 129.7 mΩ⋅mm2 exhibit only a slight sacrifice.

Forward bias annealing of proton radiation damage in NiO/Ga2O3 rectifiers

17 MeV proton irradiation at fluences from 3–7 × 1013 cm−2 of vertical geometry NiO/β-Ga2O3 heterojunction rectifiers produced carrier removal rates in the range 120–150 cm−1 in the drift region. The forward current density decreased by up to 2 orders of magnitude for the highest fluence, while the reverse leakage current increased by a factor of ∼20. Low-temperature annealing methods are of interest for mitigating radiation damage in such devices where thermal annealing is not feasible at the temperatures needed to remove defects. While thermal annealing has previously been shown to produce a limited recovery of the damage under these conditions, athermal annealing by minority carrier injection from NiO into the Ga2O3 has not previously been attempted. Forward bias annealing produced an increase in forward current and a partial recovery of the proton-induced damage. Since the minority carrier diffusion length is 150–200 nm in proton irradiated Ga2O3, recombination-enhanced annealing of point defects cannot be the mechanism for this recovery, and we suggest that electron wind force annealing occurs.