Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact

Abstract

In this work, MeV alpha particles generated from an accelerator are used to study single event breakdown (SEB) in 4H-SiC MOSFET samples, rated at 3.3 kV. The samples are exposed to bursts of alpha particles under reverse bias conditions to investigate the SEB sensitivity to ion energy and reverse bias. The energies of alpha particles are chosen to reach different depths in the drift region of the MOSFET devices, and also to penetrate the whole drift region. Forward and reverse characteristics are measured after each exposure, as long as no failures occur, to ensure that the device performance is maintained. The measurements show that no significant effects are observed on the drain-source leakage current, while minor effects on gate behavior can be seen as a function of accumulated fluence. Furthermore, SEB can only be triggered with a reverse bias larger than, or equal to 3 kV. A standard MOSFET cell with a similar rated voltage is also simulated in Sentaurus TCAD to study these effects, using two different models for the incident ion-induced ionization: the Alpha Particle and the Heavy Ion model. Simulations show that the Alpha Particle model cannot induce any device failures even with a 3.5 kV reverse bias, while it is possible to trigger a failure by the Heavy Ion model, where the ionization can be selected. Carrier plasma and internal electric field distributions of the two models are plotted and compared, showing that device failures triggered by a heavy ion are related to the hole injection at epi-substrate interface, in which linear energy transfer (LET) of the particle plays an important role.