The crystal structure stability, electronic and magnetic properties, field emission, and catalytic properties of the metal-doped GeC systems are investigated by the first principles. The Ef (formation energy) in the range of −5.713 to −14.240 eV indicates that the metal-doped GeC systems have energy stability. The Al-, Cr-, Fe-, Co-, Cu-, and Zn-doped GeC systems exhibit metallic properties, but the Ti-, V-, Mn-, and Ni-doped GeC systems retain semiconductor properties. Notably, the V-, Cr-, Mn-, Fe-, Co-, Cu-, and Zn-doped GeC systems exhibit magnetism due to doping effects. In addition, the Ti-, V-, Cr-, Mn-, Fe-, and Co-doped GeC systems have field emission properties relative to the intrinsic GeC due to the decrease of work function. Importantly, the low over-potential indicates that the doping systems have strong electro-catalytic hydrogen production ability. Therefore, the metal-doped GeC has potential applications in spintronic, field emission devices, and electro-catalytic hydrogen production.